ページ 784 - メモリ | 集積回路（IC）

部品番号	メーカ	説明	パッケージ	在庫	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F256G08AMCBBH7-6:B TR	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,552	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
SST25VF064C-80-4I-S3AE-T	Microchip Technology	IC FLASH 64MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Dual I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 2.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫5,136	FLASH	FLASH	64Mb (8M x 8)	SPI - Dual I/O	80MHz	2.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS25LQ080-JVLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT 104MHZ 8VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-VVSOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫3,440	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O	104MHz	1ms	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-VVSOP
M25PE40S-VMW6G	Micron Technology Inc.	IC FLASH 4MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	パッケージ: 8-SOIC (0.209", 5.30mm Width)	在庫6,592	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
MT29F128G08CFABBWP-12:B	Micron Technology Inc.	IC FLASH 128GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	パッケージ: 48-TSOP	在庫5,872	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TSOP	48-TSOP
CAT28F020H12	ON Semiconductor	IC FLASH 2MBIT 120NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	パッケージ: 32-TFSOP (0.724", 18.40mm Width)	在庫3,664	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	120ns	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
CY7C1312BV18-200BZI	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	パッケージ: 165-LBGA	在庫3,024	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT28C64-25SC	Microchip Technology	IC EEPROM 64KBIT 250NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 250ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	パッケージ: 28-SOIC (0.295", 7.50mm Width)	在庫6,688	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	1ms	250ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
7005S70FB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 70NS 68FLATPAK Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 68-Flatpack Supplier Device Package: 68-FPACK	パッケージ: 68-Flatpack	在庫5,360	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	68-Flatpack	68-FPACK
MT25QL01GBBB8ESF-0SIT TR	Micron Technology Inc.	IC FLASH 1GBIT 108MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫6,208	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
24LC08BHT-E/MNY	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (256 x 8 x 4) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	パッケージ: 8-WFDFN Exposed Pad	在庫4,464	EEPROM	EEPROM	8Kb (256 x 8 x 4)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
CY7C1371DV33-133AXI	Cypress Semiconductor Corp	IC SRAM 18MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	パッケージ: 100-LQFP	在庫6,588	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
BR24C01-RMN6TP	Rohm Semiconductor	IC EEPROM 1KBIT 100KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,360	EEPROM	EEPROM	1Kb (128 x 8)	I2C	100kHz	10ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AS4C128M8D1-6TIN	Alliance Memory, Inc.	IC SDRAM 1GBIT 166MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	パッケージ: 66-TSSOP (0.400", 10.16mm Width)	在庫6,768	DRAM	SDRAM - DDR	1Gb (128M x 8)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
71256SA25YG	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	パッケージ: 28-BSOJ (0.300", 7.62mm Width)	在庫6,464	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
IS43DR81280C-3DBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 60TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5)	パッケージ: 60-TFBGA	在庫6,400	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (8x10.5)
IS25LP128F-JLLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	パッケージ: 8-WDFN Exposed Pad	在庫6,288	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
24CW1280T-I/CS1668	Microchip Technology	128 KBIT I2C SERIAL EEPROM WITH Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-CSP	パッケージ: 4-XFBGA, CSPBGA	在庫5,760	EEPROM	EEPROM	128Kb (16K x 8)	I²C	1MHz	5ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	4-XFBGA, CSPBGA	4-CSP
AS4C64M32MD2A-25BCNTR	Alliance Memory, Inc.	IC DRAM 2G PARALLEL 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-FBGA (10x11.5)	パッケージ: 134-VFBGA	在庫7,920	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TA)	Surface Mount	134-VFBGA	134-FBGA (10x11.5)
MT40A512M16TB-062E:J	Micron Technology Inc.	IC SDRAM DDR4 8G 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	パッケージ: 96-TFBGA	在庫2,064	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MX75U25690FXDR02	Macronix	SERIAL NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (64M x 4) Memory Interface: SPI Clock Frequency: 120MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	パッケージ: 24-TBGA	在庫2,432	FLASH	FLASH - NOR	256Mb (64M x 4)	SPI	120MHz	-	-	1.65V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
W9812G6KB-6	Winbond Electronics	IC DRAM 128MBIT PAR 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	パッケージ: -	在庫288	DRAM	SDRAM	128Mbit	Parallel	166 MHz	-	5 ns	3V ~ 3.6V	0°C ~ 70°C (TC)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
SM671PEC-BFSS	Silicon Motion, Inc.	IC FLASH 160GBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 160Gbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TBGA Supplier Device Package: 153-BGA (11.5x13)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (SLC)	160Gbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TBGA	153-BGA (11.5x13)
IS21TF128G-JQLI	ISSI, Integrated Silicon Solution Inc	IC FLASH 1TBIT EMMC 100LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LFBGA (14x18)	パッケージ: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LFBGA (14x18)
AS4C1G8D4-75BIN	Alliance Memory, Inc.	IC DRAM 8GBIT POD 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: POD Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x12)	パッケージ: -	在庫459	DRAM	SDRAM - DDR4	8Gbit	POD	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x12)
MWS5101AEL3	Harris Corporation	IC SRAM 1KBIT PARALLEL 22DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 400ns Access Time: 350 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 22-DIP (0.400", 10.16mm) Supplier Device Package: 22-PDIP	パッケージ: -	Request a Quote	SRAM	SRAM - Asynchronous	1Kbit	Parallel	-	400ns	350 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	22-DIP (0.400", 10.16mm)	22-PDIP
CY62148G30-45ZAXI	Infineon Technologies	ASYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-TSOP I	パッケージ: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous	4Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-TSOP I
NDL28PFH-9MIT-TR	Insignis Technology Corporation	IC DRAM 2GBIT PAR 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (8x10.5)	パッケージ: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (8x10.5)

MT29F256G08AMCBBH7-6:B TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,552

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

SST25VF064C-80-4I-S3AE-T

Microchip Technology

IC FLASH 64MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Dual I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 2.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫5,136

FLASH

64Mb (8M x 8)

SPI - Dual I/O

80MHz

2.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS25LQ080-JVLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 104MHZ 8VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-VVSOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫3,440

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O

104MHz

1ms

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-VVSOP

M25PE40S-VMW6G

Micron Technology Inc.

IC FLASH 4MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

パッケージ: 8-SOIC (0.209", 5.30mm Width)

在庫6,592

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

MT29F128G08CFABBWP-12:B

Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

パッケージ: 48-TSOP

在庫5,872

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TSOP

CAT28F020H12

ON Semiconductor

IC FLASH 2MBIT 120NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

パッケージ: 32-TFSOP (0.724", 18.40mm Width)

在庫3,664

FLASH

2Mb (256K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

CY7C1312BV18-200BZI

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

パッケージ: 165-LBGA

在庫3,024

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

200MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT28C64-25SC

Microchip Technology

IC EEPROM 64KBIT 250NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 250ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

在庫6,688

EEPROM

64Kb (8K x 8)

Parallel

-

1ms

250ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

7005S70FB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 70NS 68FLATPAK

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-Flatpack
Supplier Device Package: 68-FPACK

パッケージ: 68-Flatpack

在庫5,360

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

68-Flatpack

68-FPACK

MT25QL01GBBB8ESF-0SIT TR

Micron Technology Inc.

IC FLASH 1GBIT 108MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫6,208

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

24LC08BHT-E/MNY

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (256 x 8 x 4)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

パッケージ: 8-WFDFN Exposed Pad

在庫4,464

EEPROM

8Kb (256 x 8 x 4)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

CY7C1371DV33-133AXI

Cypress Semiconductor Corp

IC SRAM 18MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

パッケージ: 100-LQFP

在庫6,588

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

BR24C01-RMN6TP

Rohm Semiconductor

IC EEPROM 1KBIT 100KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,360

EEPROM

1Kb (128 x 8)

I2C

100kHz

10ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AS4C128M8D1-6TIN

Alliance Memory, Inc.

IC SDRAM 1GBIT 166MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

パッケージ: 66-TSSOP (0.400", 10.16mm Width)

在庫6,768

DRAM

SDRAM - DDR

1Gb (128M x 8)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

71256SA25YG

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

パッケージ: 28-BSOJ (0.300", 7.62mm Width)

在庫6,464

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

IS43DR81280C-3DBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)

パッケージ: 60-TFBGA

在庫6,400

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (8x10.5)

IS25LP128F-JLLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

パッケージ: 8-WDFN Exposed Pad

在庫6,288

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

24CW1280T-I/CS1668

Microchip Technology

128 KBIT I2C SERIAL EEPROM WITH

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-CSP

パッケージ: 4-XFBGA, CSPBGA

在庫5,760

EEPROM

128Kb (16K x 8)

I²C

1MHz

5ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

4-XFBGA, CSPBGA

4-CSP

AS4C64M32MD2A-25BCNTR

Alliance Memory, Inc.

IC DRAM 2G PARALLEL 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-FBGA (10x11.5)

パッケージ: 134-VFBGA

在庫7,920

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TA)

Surface Mount

134-VFBGA

134-FBGA (10x11.5)

MT40A512M16TB-062E:J

Micron Technology Inc.

IC SDRAM DDR4 8G 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

パッケージ: 96-TFBGA

在庫2,064

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MX75U25690FXDR02

Macronix

SERIAL NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (64M x 4)
Memory Interface: SPI
Clock Frequency: 120MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

パッケージ: 24-TBGA

在庫2,432

FLASH

FLASH - NOR

256Mb (64M x 4)

SPI

120MHz

-

1.65V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

W9812G6KB-6

Winbond Electronics

IC DRAM 128MBIT PAR 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

パッケージ: -

在庫288

DRAM

SDRAM

128Mbit

Parallel

166 MHz

-

5 ns

3V ~ 3.6V

0°C ~ 70°C (TC)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

SM671PEC-BFSS

Silicon Motion, Inc.

IC FLASH 160GBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 160Gbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TBGA
Supplier Device Package: 153-BGA (11.5x13)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (SLC)

160Gbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TBGA

153-BGA (11.5x13)

IS21TF128G-JQLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 1TBIT EMMC 100LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LFBGA (14x18)

パッケージ: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LFBGA (14x18)

AS4C1G8D4-75BIN

Alliance Memory, Inc.

IC DRAM 8GBIT POD 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: POD
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x12)

パッケージ: -

在庫459

DRAM

SDRAM - DDR4

8Gbit

POD

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x12)

MWS5101AEL3

Harris Corporation

IC SRAM 1KBIT PARALLEL 22DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 400ns
Access Time: 350 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 22-DIP (0.400", 10.16mm)
Supplier Device Package: 22-PDIP

パッケージ: -

Request a Quote

SRAM

SRAM - Asynchronous

1Kbit

Parallel

-

400ns

350 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

22-DIP (0.400", 10.16mm)

22-PDIP

CY62148G30-45ZAXI

Infineon Technologies

ASYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I

パッケージ: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous

4Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-TSOP I

NDL28PFH-9MIT-TR

Insignis Technology Corporation

IC DRAM 2GBIT PAR 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (8x10.5)

パッケージ: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (8x10.5)