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PMIC - ゲートドライバ

レコード 7,713
ページ  80/276
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部品番号
メーカ
説明
パッケージ
在庫
数量
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IR2107
Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫4,624
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
200mA, 350mA
Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
MAX5062CASA
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫3,392
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
ISL6613IRZ-T
Intersil

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
パッケージ: 10-VFDFN Exposed Pad
在庫7,984
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
MIC4422CM-TR
Microchip Technology

IC DRIVER MOSFET 9A LS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 24ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫2,112
Single
1
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
9A, 9A
Non-Inverting
-
20ns, 24ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
HIP4080AIBT
Intersil

IC DRIVER FULL BRIDGE FET 20SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 2.6A, 2.4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
パッケージ: 20-SOIC (0.295", 7.50mm Width)
在庫6,624
Synchronous
4
N-Channel MOSFET
9.5 V ~ 15 V
1V, 2.5V
2.6A, 2.4A
Non-Inverting
95V
10ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
hot ISL6612AECBZ-T
Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫124,668
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MIC4606-2YML-TR
Microchip Technology

IC MOSFET DVR 85V FULL BRIDGE

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5.25 V ~ 16 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 108V
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
パッケージ: 16-VQFN Exposed Pad
在庫3,200
Synchronous
4
N-Channel MOSFET
5.25 V ~ 16 V
0.8V, 2.2V
1A, 1A
Non-Inverting
108V
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
MAX17600AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
在庫6,384
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
NCP81253BMNTBG
ON Semiconductor

IC MOSFET DVR SYNC BUCK 8DFN

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫7,520
-
-
-
-
-
-
-
-
-
-
-
-
-
hot FAN7392MX
Fairchild/ON Semiconductor

IC GATE DVR MONO HI/LO 16SOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 4.5V, 9.5V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
パッケージ: 16-SOIC (0.295", 7.50mm Width)
在庫47,580
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
4.5V, 9.5V
3A, 3A
Non-Inverting
600V
25ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
TSC427CPA+
Maxim Integrated

IC DRVR MOSFET DUAL 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
パッケージ: 8-DIP (0.300", 7.62mm)
在庫4,032
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
1.5A, 1.5A
Non-Inverting
-
25ns, 25ns
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot IR2213STRPBF
Infineon Technologies

IC DVR HI/LO SIDE 16-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.295", 7.50mm Width)
在庫114,600
Independent
2
IGBT, N-Channel MOSFET
12 V ~ 20 V
6V, 9.5V
2A, 2.5A
Non-Inverting
1200V
25ns, 17ns
125°C (TJ)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
2EDN7524FXTMA1
Infineon Technologies

IC GATE DRVR 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-60
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫2,096
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
-
5A, 5A
Non-Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-60
MIC4609YWM-TR
Microchip Technology

IC GATE DRVR HALF-BRIDGE 28SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
パッケージ: 28-SOIC (0.295", 7.50mm Width)
在庫3,872
3-Phase
6
IGBT, N-Channel, P-Channel MOSFET
10 V ~ 20 V
0.8V, 2.2V
1A, 1A
Non-Inverting
600V
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
DGD2103MS8-13
Diodes Incorporated

IC GATE DRVR HV SO8

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,552
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot LTC4444EMS8E-5#PBF
Linear Technology

IC MOSFET DRIVER N-CH 8-MSOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 13.5 V
  • Logic Voltage - VIL, VIH: 1.85V, 3.25V
  • Current - Peak Output (Source, Sink): 2.5A, 3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 8ns, 5ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-MSOP-EP
パッケージ: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
在庫50,940
Independent
2
N-Channel MOSFET
4.5 V ~ 13.5 V
1.85V, 3.25V
2.5A, 3A
Inverting
114V
8ns, 5ns
-40°C ~ 125°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-MSOP-EP
EB01-FS300R17KE3
Power Integrations

MODULE GATE DVR P&P SCALE 1

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫6,480
-
-
-
-
-
-
-
-
-
-
-
-
-
ISL6614AIRZ
Renesas Electronics America

IC DRIVER DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
パッケージ: 16-VQFN Exposed Pad
在庫7,744
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
ISL6612BEIBZ
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
パッケージ: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
在庫7,872
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
MCP14E5-E/SL
Microchip Technology

MOSFET DRVR 4.5A DUAL HS 16SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 18ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
パッケージ: 16-SOIC (0.154", 3.90mm Width)
在庫2,736
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
4A, 4A
Inverting, Non-Inverting
-
15ns, 18ns
-40°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
1SD210F2-CM900HG-90H_OPT1
Power Integrations

IGBT DRIVER P/P 1CH COATING

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 15.5V ~ 16.8V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 10A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 680 V
  • Rise / Fall Time (Typ): 100ns, 100ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Single
1
IGBT
15.5V ~ 16.8V
-
6A, 10A
-
680 V
100ns, 100ns
-40°C ~ 85°C
Chassis Mount
Module
Module
1SD210F2-FZ750R65KE3_OPT1
Power Integrations

IGBT DRIVER P/P 1CH COATING

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 15.5V ~ 16.8V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 10A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200 V
  • Rise / Fall Time (Typ): 100ns, 100ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: -
Request a Quote
Single
1
IGBT
15.5V ~ 16.8V
-
6A, 10A
-
1200 V
100ns, 100ns
-40°C ~ 85°C
Chassis Mount
Module
Module
TPM27523-EV1R
3PEAK

HIGH-SPEED LOW-SIDE DRIVER IC 8

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 23V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 6ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-EMSOP
パッケージ: -
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Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 23V
-
5A, 5A
Inverting
-
7ns, 6ns
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-EMSOP
MAQ4123YME-TRVAO
Microchip Technology

IC MOSFET DVR 3A L-SIDE 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 11ns, 11ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫1,386
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 20V
0.8V, 2.4V
3A, 3A
Inverting
-
11ns, 11ns
-40°C ~ 125°C (TJ)
-
-
-
LTC7001MPMSE
Analog Devices Inc.

IC GATE DRVR HIGH-SIDE 10MSOP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3.5V ~ 15V
  • Logic Voltage - VIL, VIH: 1.8V, 1.7V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 135 V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 10-MSOP-EP
パッケージ: -
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Single
1
N-Channel MOSFET
3.5V ~ 15V
1.8V, 1.7V
-
Non-Inverting
135 V
90ns, 40ns
-55°C ~ 150°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
10-MSOP-EP
2ED2304S06FXLSA1
Infineon Technologies

IC HVIC 8DSOP

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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-
-
-
-
-
-
-
-
-
-
-
-
-
NCV303150MTW
onsemi

INTEGRATED DRIVER & MOSFET

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 5.5V
  • Logic Voltage - VIL, VIH: 0.85V, 2.3V
  • Current - Peak Output (Source, Sink): 80A, 80A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 17ns, 26ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 39-PowerWFQFN
  • Supplier Device Package: 39-WQFNW (5x6)
パッケージ: -
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Single
1
N-Channel MOSFET
4.5V ~ 5.5V
0.85V, 2.3V
80A, 80A
Non-Inverting
-
17ns, 26ns
-40°C ~ 125°C (TA)
Surface Mount
39-PowerWFQFN
39-WQFNW (5x6)
2EDN7533FXTMA1
Infineon Technologies

DRIVER IC PG-DSO-8

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 20V
  • Logic Voltage - VIL, VIH: 1.4V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8.6ns, 6ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
パッケージ: -
在庫7,500
Independent
2
N-Channel, P-Channel MOSFET
4.5V ~ 20V
1.4V, 1.9V
5A, 5A
Inverting
-
8.6ns, 6ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8