画像 |
部品番号 |
メーカ |
説明 |
パッケージ |
在庫 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
DIODE GEN PURP 1.1KV 1.4A D5B
|
パッケージ: SQ-MELF, E |
在庫4,528 |
|
1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 900V 1.4A E-MELF
|
パッケージ: SQ-MELF, E |
在庫6,880 |
|
900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 880V 1.4A D5B
|
パッケージ: SQ-MELF, E |
在庫6,784 |
|
880V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 880V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 660V 1.75A D5B
|
パッケージ: SQ-MELF, E |
在庫5,232 |
|
660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1.3A AXIAL
|
パッケージ: E, Axial |
在庫4,912 |
|
100V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | E, Axial | E-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1.3A AXIAL
|
パッケージ: E, Axial |
在庫7,408 |
|
50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Through Hole | E, Axial | E-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 5A AXIAL
|
パッケージ: B, Axial |
在庫7,488 |
|
600V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 850MA AXIAL
|
パッケージ: A, Axial |
在庫5,936 |
|
100V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GP 1.75KV 250MA AXIAL
|
パッケージ: S, Axial |
在庫7,696 |
|
1750V | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1750V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A
|
パッケージ: SQ-MELF, A |
在庫4,384 |
|
1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1A AXIAL
|
パッケージ: A, Axial |
在庫7,056 |
|
100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 6A D5B
|
パッケージ: SQ-MELF, E |
在庫2,992 |
|
100V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 6A D5B
|
パッケージ: SQ-MELF, E |
在庫6,640 |
|
50V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 850MA AXIAL
|
パッケージ: A, Axial |
在庫3,280 |
|
50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
||
Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A
|
パッケージ: SQ-MELF, A |
在庫7,568 |
|
1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A AXIAL
|
パッケージ: B, Axial |
在庫6,096 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
|
パッケージ: B, Axial |
在庫5,680 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A AXIAL
|
パッケージ: B, Axial |
在庫5,536 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 65pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 1A A-MELF
|
パッケージ: SQ-MELF, A |
在庫2,272 |
|
600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 3A BPKG
|
パッケージ: SQ-MELF, B |
在庫3,408 |
|
150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 3A BPKG
|
パッケージ: SQ-MELF, B |
在庫5,440 |
|
100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 3A BPKG
|
パッケージ: SQ-MELF, B |
在庫5,616 |
|
50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 600V 3A B-MELF
|
パッケージ: SQ-MELF, B |
在庫6,768 |
|
600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 5A D5B
|
パッケージ: SQ-MELF, B |
在庫6,704 |
|
200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A
|
パッケージ: SQ-MELF, A |
在庫7,552 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL
|
パッケージ: A, Axial |
在庫3,904 |
|
200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SWITCHING 600V 22A 2-PIN D
|
パッケージ: - |
在庫3,232 |
|
600V | - | 1.2V @ 30A | - | - | - | - | - | - | - | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE GEN PURP 100V 1.3A AXIAL
|
パッケージ: A, Axial |
在庫3,392 |
|
100V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |