ページ 42 - Microsemi Corporation 製品 - ダイオード - 整流器 - シングル

部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: A, Axial	在庫3,200	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Through Hole	A, Axial	-	-65°C ~ 155°C
JANTXV1N1206A	Microsemi Corporation	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫7,184	600V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
JANTX1N1204AR	Microsemi Corporation	DIODE GEN PURP 400V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫6,128	400V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 400V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
JANTXV1N6642UB2R	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: UB2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 2-SMD, No Lead	在庫4,528	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 175°C
JANTXV1N6642UB2	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: UB2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 2-SMD, No Lead	在庫6,896	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 175°C
JANTXV1N645-1	Microsemi Corporation	DIODE GEN PURP 225V 400MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225V Current - Average Rectified (Io): 400mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 225V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AH, DO-35, Axial	在庫6,176	225V	400mA (DC)	1V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N457	Microsemi Corporation	DIODE GEN PURP 70V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 70V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AH, DO-35, Axial	在庫6,240	70V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N3903	Microsemi Corporation	DIODE GEN PURP 400V 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 63A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,880	400V	20A	1.4V @ 63A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 400V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
1N5822	Microsemi Corporation	DIODE SCHOTTKY 40V 3A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100mA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 125°C	パッケージ: B, Axial	在庫4,455,396	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100mA @ 40V	-	Through Hole	B, Axial	-	-65°C ~ 125°C
JANTX1N1206A	Microsemi Corporation	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫5,632	600V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
1N5183	Microsemi Corporation	DIODE GEN PURP 7.5KV 100MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 7500V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 10V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 7500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: S, Axial	在庫5,856	7500V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 7500V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
JAN1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-204AL, DO-41, Axial	在庫6,288	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
JAN1N1206AR	Microsemi Corporation	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫3,840	600V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
JANTXV1N6642UBD	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫7,040	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JANTXV1N6642UBCC	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫3,296	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JANTXV1N6642UBCA	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫7,056	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JANTX1N6642UB2R	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: UB2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 2-SMD, No Lead	在庫5,440	75V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 175°C
JANTX1N6642UB2	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: UB2 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 2-SMD, No Lead	在庫7,200	75V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 175°C
JANTX1N6642UBD	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫3,200	75V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JANTX1N6642UBCC	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫3,344	75V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JAN1N1206A	Microsemi Corporation	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫6,016	600V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
JANTXV1N6630	Microsemi Corporation	DIODE GEN PURP 900V 1.4A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 900V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: E-PAK Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: E, Axial	在庫5,168	900V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 900V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 150°C
JANTXV1N6631US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 4µA @ 1100V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: SQ-MELF, B	在庫5,216	1100V	1.4A	1.6V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 150°C
JANTXV1N4148UB2R	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: 3-SMD, No Lead	在庫7,392	75V	200mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	UB	-65°C ~ 200°C
UES1306	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: B, Axial	在庫4,320	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 400V	-	Through Hole	B, Axial	-	-55°C ~ 150°C
S304120	Microsemi Corporation	DIODE GEN PURP 1.2KV 40A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 10µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	パッケージ: DO-203AB, DO-5, Stud	在庫3,424	1200V	40A	1.9V @ 40A	Standard Recovery >500ns, > 200mA (Io)	5µs	10µA @ 1200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
1N6079US	Microsemi Corporation	DIODE GEN PURP 50V 2A G-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, G Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: SQ-MELF, G	在庫2,992	50V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 50V	-	Surface Mount	SQ-MELF, G	G-MELF (D-5C)	-65°C ~ 155°C
1N6078US	Microsemi Corporation	DIODE GEN PURP 150V 6A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: E-MELF	在庫3,200	150V	6A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 155°C

1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: A, Axial

在庫3,200

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

-

Through Hole

A, Axial

-

-65°C ~ 155°C

JANTXV1N1206A

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫7,184

600V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

JANTX1N1204AR

Microsemi Corporation

DIODE GEN PURP 400V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫6,128

400V

12A

2.3V @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 400V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

JANTXV1N6642UB2R

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: UB2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 2-SMD, No Lead

在庫4,528

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

2-SMD, No Lead

UB2

-65°C ~ 175°C

JANTXV1N6642UB2

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: UB2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 2-SMD, No Lead

在庫6,896

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

2-SMD, No Lead

UB2

-65°C ~ 175°C

JANTXV1N645-1

Microsemi Corporation

DIODE GEN PURP 225V 400MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 400mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 225V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AH, DO-35, Axial

在庫6,176

225V

400mA (DC)

1V @ 400mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50nA @ 225V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JAN1N457

Microsemi Corporation

DIODE GEN PURP 70V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25nA @ 70V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AH, DO-35, Axial

在庫6,240

70V

150mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

25nA @ 70V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

1N3903

Microsemi Corporation

DIODE GEN PURP 400V 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 63A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,880

400V

20A

1.4V @ 63A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

50µA @ 400V

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

1N5822

Microsemi Corporation

DIODE SCHOTTKY 40V 3A AXIAL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: B, Axial

在庫4,455,396

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100mA @ 40V

-

Through Hole

B, Axial

-

-65°C ~ 125°C

JANTX1N1206A

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫5,632

600V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

1N5183

Microsemi Corporation

DIODE GEN PURP 7.5KV 100MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 7500V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 10V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 7500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: S, Axial
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: S, Axial

在庫5,856

7500V

100mA

10V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 7500V

-

Through Hole

S, Axial

-65°C ~ 175°C

JAN1N5819-1

Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

在庫6,288

45V

1A

490mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 45V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

JAN1N1206AR

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫3,840

600V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

JANTXV1N6642UBD

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫7,040

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JANTXV1N6642UBCC

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫3,296

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JANTXV1N6642UBCA

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫7,056

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JANTX1N6642UB2R

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: UB2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 2-SMD, No Lead

在庫5,440

75V

300mA (DC)

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

2-SMD, No Lead

UB2

-65°C ~ 175°C

JANTX1N6642UB2

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: UB2
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 2-SMD, No Lead

在庫7,200

75V

300mA (DC)

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

2-SMD, No Lead

UB2

-65°C ~ 175°C

JANTX1N6642UBD

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫3,200

75V

300mA (DC)

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JANTX1N6642UBCC

Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-UB (3.09x2.45)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫3,344

75V

300mA (DC)

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

-

Surface Mount

3-SMD, No Lead

3-UB (3.09x2.45)

-65°C ~ 175°C

JAN1N1206A

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫6,016

600V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

JANTXV1N6630

Microsemi Corporation

DIODE GEN PURP 900V 1.4A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: E, Axial

在庫5,168

900V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

2µA @ 900V

-

Through Hole

E, Axial

E-PAK

-65°C ~ 150°C

JANTXV1N6631US

Microsemi Corporation

DIODE GEN PURP 1.1KV 1.4A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1100V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: SQ-MELF, B

在庫5,216

1100V

1.4A

1.6V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

4µA @ 1100V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 150°C

JANTXV1N4148UB2R

Microsemi Corporation

DIODE GEN PURP 75V 200MA SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: 3-SMD, No Lead

在庫7,392

75V

200mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

4pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

UB

-65°C ~ 200°C

UES1306

Microsemi Corporation

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 20µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: B, Axial

在庫4,320

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

20µA @ 400V

-

Through Hole

B, Axial

-

-55°C ~ 150°C

S304120

Microsemi Corporation

DIODE GEN PURP 1.2KV 40A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 10µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -

パッケージ: DO-203AB, DO-5, Stud

在庫3,424

1200V

40A

1.9V @ 40A

Standard Recovery >500ns, > 200mA (Io)

5µs

10µA @ 1200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-

1N6079US

Microsemi Corporation

DIODE GEN PURP 50V 2A G-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, G
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: SQ-MELF, G

在庫2,992

50V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 50V

-

Surface Mount

SQ-MELF, G

G-MELF (D-5C)

-65°C ~ 155°C

1N6078US

Microsemi Corporation

DIODE GEN PURP 150V 6A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: E-MELF

在庫3,200

150V

6A

1.76V @ 18.8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 150V

-

Surface Mount

E-MELF

D-5B

-65°C ~ 155°C