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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
APT60D30BG	Microsemi Corporation	DIODE GEN PURP 300V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 38ns Current - Reverse Leakage @ Vr: 250µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-247-2	在庫6,736	300V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	38ns	250µA @ 300V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
APT30S20SG	Microsemi Corporation	DIODE SCHOTTKY 200V 45A D3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3 [S] Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	在庫2,100	200V	45A	850mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	500µA @ 200V	-	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	D3 [S]	-55°C ~ 150°C
APT15S20KG	Microsemi Corporation	DIODE SCHOTTKY 200V 25A TO220 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 830mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 250µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-2	在庫5,840	200V	25A	830mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	250µA @ 200V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 150°C
APT15D40KG	Microsemi Corporation	DIODE GEN PURP 400V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 150µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫7,920	400V	15A	1.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	150µA @ 400V	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
APT15D30KG	Microsemi Corporation	DIODE GEN PURP 300V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 150µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: TO-220-2	在庫3,376	300V	15A	1.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	150µA @ 300V	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 150°C
UPS140/TR7	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: DO-216AA	在庫5,216	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	70pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS5100HE3	Microsemi Corporation	DIODE SCHOTTKY 100V 5A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	パッケージ: Powermite?3	在庫3,248	100V	5A	810mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	150pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
UPS1040E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 10A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 35V Capacitance @ Vr, F: 700pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: Powermite?3	在庫991,980	40V	10A	510mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 35V	700pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 150°C
1N6624	Microsemi Corporation	DIODE GEN PURP 990V 1A A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 990V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 18V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 500nA @ 900V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: A, Axial	在庫3,376	990V	1A	18V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	60ns	500nA @ 900V	10pF @ 10V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
LSM845J	Microsemi Corporation	DIODE SCHOTTKY 45V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AB, SMC	在庫5,408	45V	8A	520mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
LSM545J	Microsemi Corporation	DIODE SCHOTTKY 45V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AB, SMC	在庫5,168	45V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
LSM115J	Microsemi Corporation	DIODE SCHOTTKY 15V 1A DO214BA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-214AA, SMB	在庫600,000	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 150°C
MS1645	Microsemi Corporation	DIODE SCHOTTKY 45V 16A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 670mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-220-2	在庫6,848	45V	16A	670mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SBR8215	Microsemi Corporation	DIODE SCHOTTKY 80A 15V DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 500mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 15V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	パッケージ: DO-203AB, DO-5, Stud	在庫7,584	15V	80A	500mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 15V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
UMA5819	Microsemi Corporation	DIODE SCHOTTKY 40V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫2,064	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
UMA5818	Microsemi Corporation	DIODE SCHOTTKY 30V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫4,272	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
UMA5817-T7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫3,008	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
UMAF5819	Microsemi Corporation	DIODE SCHOTTKY 40V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫3,216	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
UMAF5818	Microsemi Corporation	DIODE SCHOTTKY 30V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫6,416	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
UMAF5817	Microsemi Corporation	DIODE SCHOTTKY 20V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	パッケージ: Ultramite?	在庫3,408	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
JANTXV1N6844U3	Microsemi Corporation	DIODE GEN PURP 75V 300MA U3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫3,472	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	U3	-65°C ~ 175°C
JANS1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AH, DO-35, Axial	在庫4,512	125V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANTX1N6844U3	Microsemi Corporation	DIODE SCHOTTKY 100V 15A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: 3-SMD, No Lead	在庫6,480	100V	15A	900mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	600pF @ 5V, 1MHz	Surface Mount	3-SMD, No Lead	U3	-65°C ~ 150°C
JAN1N6843CCU3	Microsemi Corporation	DIODE GEN PURP 50V 300MA U3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: 3-SMD, No Lead	在庫2,848	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	U3	-65°C ~ 175°C
JAN1N6844U3	Microsemi Corporation	DIODE SCHOTTKY 100V 15A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: 3-SMD, No Lead	在庫6,016	100V	15A	900mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	600pF @ 5V, 1MHz	Surface Mount	3-SMD, No Lead	U3	-65°C ~ 150°C
UES706HR2	Microsemi Corporation	DIODE GEN PURP 400V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫5,008	400V	20A (DC)	1.25V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
JANTXV1N1190R	Microsemi Corporation	DIODE GEN PURP 600V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,248	600V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1190	Microsemi Corporation	DIODE GEN PURP 600V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫4,704	600V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C

APT60D30BG

Microsemi Corporation

DIODE GEN PURP 300V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38ns
Current - Reverse Leakage @ Vr: 250µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-2

在庫6,736

300V

60A

1.4V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

38ns

250µA @ 300V

-

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

APT30S20SG

Microsemi Corporation

DIODE SCHOTTKY 200V 45A D3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 500µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3 [S]
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

在庫2,100

200V

45A

850mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

500µA @ 200V

-

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

D3 [S]

-55°C ~ 150°C

APT15S20KG

Microsemi Corporation

DIODE SCHOTTKY 200V 25A TO220

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 250µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2

在庫5,840

200V

25A

830mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

250µA @ 200V

-

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 150°C

APT15D40KG

Microsemi Corporation

DIODE GEN PURP 400V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 150µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫7,920

400V

15A

1.5V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

150µA @ 400V

-

Through Hole

TO-220-2

-55°C ~ 175°C

APT15D30KG

Microsemi Corporation

DIODE GEN PURP 300V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32ns
Current - Reverse Leakage @ Vr: 150µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2

在庫3,376

300V

15A

1.4V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

32ns

150µA @ 300V

-

Through Hole

TO-220-2

-55°C ~ 150°C

UPS140/TR7

Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-216AA

在庫5,216

40V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

70pF @ 5V, 1MHz

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

UPS5100HE3

Microsemi Corporation

DIODE SCHOTTKY 100V 5A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 100V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Powermite?3
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: Powermite?3

在庫3,248

100V

5A

810mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 100V

150pF @ 4V, 1MHz

Surface Mount

Powermite?3

Powermite 3

-55°C ~ 125°C

UPS1040E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 10A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 35V
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: Powermite?3
Supplier Device Package: Powermite 3
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: Powermite?3

在庫991,980

40V

10A

510mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 35V

700pF @ 4V, 1MHz

Surface Mount

Powermite?3

Powermite 3

-55°C ~ 150°C

1N6624

Microsemi Corporation

DIODE GEN PURP 990V 1A A-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 18V @ 500mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 500nA @ 900V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: A, Axial

在庫3,376

990V

1A

18V @ 500mA

Standard Recovery >500ns, > 200mA (Io)

60ns

500nA @ 900V

10pF @ 10V, 1MHz

Through Hole

A, Axial

A-PAK

-65°C ~ 150°C

LSM845J

Microsemi Corporation

DIODE SCHOTTKY 45V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

在庫5,408

45V

8A

520mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

LSM545J

Microsemi Corporation

DIODE SCHOTTKY 45V 5A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

在庫5,168

45V

5A

520mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

LSM115J

Microsemi Corporation

DIODE SCHOTTKY 15V 1A DO214BA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

在庫600,000

15V

1A

220mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 15V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 150°C

MS1645

Microsemi Corporation

DIODE SCHOTTKY 45V 16A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

在庫6,848

45V

16A

670mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 45V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SBR8215

Microsemi Corporation

DIODE SCHOTTKY 80A 15V DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -

パッケージ: DO-203AB, DO-5, Stud

在庫7,584

15V

80A

500mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 15V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-

UMA5819

Microsemi Corporation

DIODE SCHOTTKY 40V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫2,064

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

UMA5818

Microsemi Corporation

DIODE SCHOTTKY 30V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫4,272

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

UMA5817-T7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫3,008

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

UMAF5819

Microsemi Corporation

DIODE SCHOTTKY 40V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫3,216

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

UMAF5818

Microsemi Corporation

DIODE SCHOTTKY 30V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫6,416

30V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

UMAF5817

Microsemi Corporation

DIODE SCHOTTKY 20V 1A ULTRAMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Ultramite?
Supplier Device Package: Ultramite?
Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: Ultramite?

在庫3,408

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Surface Mount

Ultramite?

-50°C ~ 125°C

JANTXV1N6844U3

Microsemi Corporation

DIODE GEN PURP 75V 300MA U3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫3,472

75V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 75V

5pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

U3

-65°C ~ 175°C

JANS1N3595-1

Microsemi Corporation

DIODE GEN PURP 125V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 1nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AH, DO-35, Axial

在庫4,512

125V

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

3µs

1nA @ 125V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

JANTX1N6844U3

Microsemi Corporation

DIODE SCHOTTKY 100V 15A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: 3-SMD, No Lead

在庫6,480

100V

15A

900mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

600pF @ 5V, 1MHz

Surface Mount

3-SMD, No Lead

U3

-65°C ~ 150°C

JAN1N6843CCU3

Microsemi Corporation

DIODE GEN PURP 50V 300MA U3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: 3-SMD, No Lead

在庫2,848

50V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

500nA @ 75V

5pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

U3

-65°C ~ 175°C

JAN1N6844U3

Microsemi Corporation

DIODE SCHOTTKY 100V 15A U3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: 3-SMD, No Lead

在庫6,016

100V

15A

900mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

600pF @ 5V, 1MHz

Surface Mount

3-SMD, No Lead

U3

-65°C ~ 150°C

UES706HR2

Microsemi Corporation

DIODE GEN PURP 400V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫5,008

400V

20A (DC)

1.25V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

JANTXV1N1190R

Microsemi Corporation

DIODE GEN PURP 600V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,248

600V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1190

Microsemi Corporation

DIODE GEN PURP 600V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫4,704

600V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C