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部品番号	メーカ	説明	パッケージ	在庫	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTXV1N1188R	Microsemi Corporation	DIODE GEN PURP 400V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫4,368	400V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1188	Microsemi Corporation	DIODE GEN PURP 400V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,584	400V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1186R	Microsemi Corporation	DIODE GEN PURP 200V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,680	200V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1186	Microsemi Corporation	DIODE GEN PURP 200V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫4,432	200V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1184R	Microsemi Corporation	DIODE GEN PURP 100V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫2,272	100V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N1184	Microsemi Corporation	DIODE GEN PURP 100V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,328	100V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N3766R	Microsemi Corporation	DIODE GEN PURP 800V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,152	800V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTX1N1186	Microsemi Corporation	DIODE GEN PURP 200V 35A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫2,624	200V	35A	1.4V @ 110A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JANTXV1N3671AR	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫3,696	800V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
JAN1N1190R	Microsemi Corporation	DIODE GEN PURP 600V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,552	600V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N1190	Microsemi Corporation	DIODE GEN PURP 600V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫6,864	600V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N1188R	Microsemi Corporation	DIODE GEN PURP 400V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫5,680	400V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N1186R	Microsemi Corporation	DIODE GEN PURP 200V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,216	200V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N1186	Microsemi Corporation	DIODE GEN PURP 200V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫7,184	200V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N1184	Microsemi Corporation	DIODE GEN PURP 100V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,904	100V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
JAN1N3766R	Microsemi Corporation	DIODE GEN PURP 800V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,440	800V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
1N1192	Microsemi Corporation	DIODE RECT GP 100V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.19V @ 90A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: -	在庫7,792	100V	40A (DC)	1.19V @ 90A	Standard Recovery >500ns, > 200mA (Io)	5µs	10µA @ 100V	-	-	-	-	-65°C ~ 200°C
UFT3140C	Microsemi Corporation	DIODE GEN PURP 400V 30A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 15mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: TO-204AA, TO-3	在庫5,104	400V	30A (DC)	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	15mA @ 400V	-	Chassis Mount	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 175°C
JAN1N3671R	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫7,536	800V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
1N5812	Microsemi Corporation	DIODE GEN PURP 50V 20A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 300pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-203AA, DO-4, Stud	在庫6,080	50V	20A	950mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	10µA @ 50V	300pF @ 10V, 1MHz	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
UES706	Microsemi Corporation	DIODE GEN PURP 400V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫7,920	400V	20A (DC)	1.25V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
APTDF430U100G	Microsemi Corporation	DIODE MODULE 1KV 500A LP4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 2.5mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: LP4 Supplier Device Package: LP4 Operating Temperature - Junction: -	パッケージ: LP4	在庫6,528	1000V	500A	2.3V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	2.5mA @ 1000V	-	Chassis Mount	LP4	LP4	-
JANTX1N3070-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 175V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	パッケージ: DO-204AA, DO-7, Axial	在庫3,664	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
JANTXV1N1204AR	Microsemi Corporation	DIODE GEN PURP 400V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫7,040	400V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
1N6081US	Microsemi Corporation	DIODE GEN PURP 150V 2A G-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, G Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: SQ-MELF, G	在庫3,280	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Surface Mount	SQ-MELF, G	G-MELF (D-5C)	-65°C ~ 155°C
JAN1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	パッケージ: G, Axial	在庫6,768	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
S3760	Microsemi Corporation	DIODE GEN PURP 600V 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	パッケージ: DO-203AB, DO-5, Stud	在庫3,360	600V	85A	1.15V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	25µA @ 600V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
JANTXV1N1206AR	Microsemi Corporation	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: DO-203AA, DO-4, Stud	在庫3,312	600V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C

JANTXV1N1188R

Microsemi Corporation

DIODE GEN PURP 400V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫4,368

400V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1188

Microsemi Corporation

DIODE GEN PURP 400V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,584

400V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1186R

Microsemi Corporation

DIODE GEN PURP 200V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,680

200V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1186

Microsemi Corporation

DIODE GEN PURP 200V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫4,432

200V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1184R

Microsemi Corporation

DIODE GEN PURP 100V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫2,272

100V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N1184

Microsemi Corporation

DIODE GEN PURP 100V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,328

100V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N3766R

Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,152

800V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTX1N1186

Microsemi Corporation

DIODE GEN PURP 200V 35A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫2,624

200V

35A

1.4V @ 110A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JANTXV1N3671AR

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫3,696

800V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

JAN1N1190R

Microsemi Corporation

DIODE GEN PURP 600V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,552

600V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N1190

Microsemi Corporation

DIODE GEN PURP 600V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫6,864

600V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N1188R

Microsemi Corporation

DIODE GEN PURP 400V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫5,680

400V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 400V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N1186R

Microsemi Corporation

DIODE GEN PURP 200V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,216

200V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N1186

Microsemi Corporation

DIODE GEN PURP 200V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫7,184

200V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N1184

Microsemi Corporation

DIODE GEN PURP 100V 35A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,904

100V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

JAN1N3766R

Microsemi Corporation

DIODE GEN PURP 800V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,440

800V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

1N1192

Microsemi Corporation

DIODE RECT GP 100V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.19V @ 90A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5µs
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: -

在庫7,792

100V

40A (DC)

1.19V @ 90A

Standard Recovery >500ns, > 200mA (Io)

5µs

10µA @ 100V

-

-65°C ~ 200°C

UFT3140C

Microsemi Corporation

DIODE GEN PURP 400V 30A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 15mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-204AA, TO-3

在庫5,104

400V

30A (DC)

1.1V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

15mA @ 400V

-

Chassis Mount

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 175°C

JAN1N3671R

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫7,536

800V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

1N5812

Microsemi Corporation

DIODE GEN PURP 50V 20A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AA, DO-4, Stud

在庫6,080

50V

20A

950mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

10µA @ 50V

300pF @ 10V, 1MHz

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 175°C

UES706

Microsemi Corporation

DIODE GEN PURP 400V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫7,920

400V

20A (DC)

1.25V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

APTDF430U100G

Microsemi Corporation

DIODE MODULE 1KV 500A LP4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 2.5mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: LP4
Operating Temperature - Junction: -

パッケージ: LP4

在庫6,528

1000V

500A

2.3V @ 500A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

2.5mA @ 1000V

-

Chassis Mount

LP4

-

JANTX1N3070-1

Microsemi Corporation

DIODE GEN PURP 175V 100MA DO7

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 175V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 175V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AA, DO-7, Axial

在庫3,664

175V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 175V

-

Through Hole

DO-204AA, DO-7, Axial

DO-7

-65°C ~ 175°C

JANTXV1N1204AR

Microsemi Corporation

DIODE GEN PURP 400V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫7,040

400V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

1N6081US

Microsemi Corporation

DIODE GEN PURP 150V 2A G-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, G
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: SQ-MELF, G

在庫3,280

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

-

Surface Mount

SQ-MELF, G

G-MELF (D-5C)

-65°C ~ 155°C

JAN1N6081

Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: G, Axial
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C

パッケージ: G, Axial

在庫6,768

150V

2A

1.5V @ 37.7A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

-

Through Hole

G, Axial

-65°C ~ 155°C

S3760

Microsemi Corporation

DIODE GEN PURP 600V 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

パッケージ: DO-203AB, DO-5, Stud

在庫3,360

600V

85A

1.15V @ 200A

Standard Recovery >500ns, > 200mA (Io)

-

25µA @ 600V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

JANTXV1N1206AR

Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AA, DO-4, Stud

在庫3,312

600V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C