Rohm Semiconductor 製品

DTC115TKAT146

Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

パッケージ: TO-236-3, SC-59, SOT-23-3

DTA124TKAT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

パッケージ: TO-236-3, SC-59, SOT-23-3

TFZGTR6.2B

Rohm Semiconductor

DIODE ZENER 6.2V 500MW TUMD2

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: TUMD2

パッケージ: 2-SMD, Flat Lead

RB060M-60DDTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 2A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 610mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

パッケージ: SOD-123F

BD9141MUV-E2

Rohm Semiconductor

IC REG BUCK ADJ 2A SYNC 20VQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 13.2V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 6V
• Current - Output: 2A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: VQFN020V4040

パッケージ: 20-VFQFN Exposed Pad

BU7294FV-E2

Rohm Semiconductor

IC OPAMP I/O FULL SWING 14SSOP

• Amplifier Type: CMOS
• Number of Circuits: 4
• Output Type: -
• Slew Rate: 3 V/µs
• Gain Bandwidth Product: 2.8MHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1mV
• Current - Supply: 2mA
• Current - Output / Channel: 16mA
• Voltage - Supply, Single/Dual (±): 2.4 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-SSOPB

パッケージ: 14-LSSOP (0.173", 4.40mm Width)

MCR10EZPF1304

Rohm Semiconductor

RES SMD 1.3M OHM 1% 1/8W 0805

• Resistance: 1.3 MOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR18EZPF1003

Rohm Semiconductor

RES SMD 100K OHM 1% 1/4W 1206

• Resistance: 100 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR10EZPJ393

Rohm Semiconductor

RES SMD 39K OHM 5% 1/8W 0805

• Resistance: 39 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

MCR18EZHF47R5

Rohm Semiconductor

RES SMD 47.5 OHM 1% 1/4W 1206

• Resistance: 47.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

MCR03EZPFX1913

Rohm Semiconductor

RES SMD 191K OHM 1% 1/10W 0603

• Resistance: 191 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

ESR25JZPF68R0

Rohm Semiconductor

RES SMD 68 OHM 1% 1/2W 1210

• Resistance: 68 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1210 (3225 Metric)

ESR25JZPF3002

Rohm Semiconductor

RES SMD 30K OHM 1% 1/2W 1210

• Resistance: 30 kOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1210 (3225 Metric)

ESR10EZPF4872

Rohm Semiconductor

RES SMD 48.7K OHM 1% 0.4W 0805

• Resistance: 48.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0805 (2012 Metric)

ESR18EZPF64R9

Rohm Semiconductor

RES SMD 64.9 OHM 1% 1/3W 1206

• Resistance: 64.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1206 (3216 Metric)

KTR03EZPJ432

Rohm Semiconductor

RES SMD 4.3K OHM 5% 1/10W 0603

• Resistance: 4.3 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0603 (1608 Metric)

PSR500HTQFJ2L00

Rohm Semiconductor

RES SMD 0.002 OHM 1% 5W 5931

• Resistance: 2 mOhms
• Tolerance: ±1%
• Power (Watts): 5W
• Composition: Metal Element
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±75ppm/°C
• Operating Temperature: -55°C ~ 170°C
• Package / Case: 5931
• Supplier Device Package: 5931
• Size / Dimension: 0.591" L x 0.305" W (15.00mm x 7.75mm)
• Height - Seated (Max): -
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 5931

MCR01MRTJ272

Rohm Semiconductor

RES SMD 2.7K OHM 5% 1/16W 0402

• Resistance: 2.7 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 0402 (1005 Metric)

MCR25JZHF1820

Rohm Semiconductor

RES SMD 182 OHM 1% 1/4W 1210

• Resistance: 182 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

パッケージ: 1210 (3225 Metric)

BR25H080FJ-2CE2

Rohm Semiconductor

IC EEPROM 8K SPI 10MHZ 8SOPJ

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 4ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP-J

パッケージ: 8-SOIC (0.173", 4.40mm Width)

BA2903YFV-CE2

Rohm Semiconductor

STANDARD OPEN-COLLECTOR COMPARAT

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open Collector
• Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
• Voltage - Input Offset (Max): 4mV @ 5V
• Current - Input Bias (Max): 250nA @ 5V
• Current - Output (Typ): 16mA @ 5V
• Current - Quiescent (Max): 1mA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): -
• Hysteresis: -
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SSOPB

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

DTC123YE3HZGTL

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A EMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

パッケージ: -

SP8K31FRATB

Rohm Semiconductor

MOSFET 2N-CH 60V 3.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

RBQ10BM100AFHTL

Rohm Semiconductor

DIODE ARR SCHOTT 100V 10A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 80 µA @ 100 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

パッケージ: -

BD6025GU-E2

Rohm Semiconductor

IC PWR SUPPLY CCD CAMERA VCSP

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

Request a Quote

HS8K1TB

Rohm Semiconductor

MOSFET 2N-CH 30V 10A/11A HSML

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta)
• Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: HSML3030L10

パッケージ: -

BD33GA3VEFJ-ME2

Rohm Semiconductor

300MA 3.3V, FIXED OUTPUT, HIGH-A

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.2V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 1.2 mA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable, Soft Start
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

パッケージ: -

RBR10BGE60ATL

Rohm Semiconductor

DIODE ARR SCHOTT 60V 10A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

パッケージ: -