ページ 112 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
SSM3J14TTE85LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2.7A TSM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.35A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫35,436
TK6A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 6A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫2,128
TK35A08N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 35A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	パッケージ: TO-220-3 Full Pack, Isolated Tab	在庫6,816
TK14E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,904
TK7S10N1Z,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.5A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,736
TPH11003NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 32A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫28,476
2SA1588-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 30V 0.5A USM Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Power - Max: 100mW Frequency - Transition: 200MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫3,440
2SA1618-Y(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A SMV Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫6,160
HN2D01JE(TE85L,F)	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA ESV Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: SOT-553	在庫32,328
TBD62004APG	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.5A 16DIP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.8A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫17,172
TC78H620FNG	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 16SSOP Motor Type - Stepper: Unipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1A Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 15 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	パッケージ: 16-LSSOP (0.173", 4.40mm Width)	在庫7,712
TB62216FTG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	パッケージ: 48-VFQFN Exposed Pad	在庫7,152
TC78H610FNG,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 16SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 800mA Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 15 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	パッケージ: 16-LSSOP (0.173", 4.40mm Width)	在庫7,696
TC58BVG0S3HBAI4	Toshiba Semiconductor and Storage	IC EEPROM 1GBIT 25NS 63FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	パッケージ: 63-VFBGA	在庫4,048
TC7SZ38F(T5L,JF,T)	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP SMV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: Open Drain Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: -, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫3,696
TD62083AFNG,N	Toshiba Semiconductor and Storage	IC DRIVER DARL SINK 8-CH 18-SSOP Type: Driver Protocol: - Number of Drivers/Receivers: 8/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 18-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 18-SSOP	パッケージ: 18-LSSOP (0.173", 4.40mm Width)	在庫2,112
TD62003APG,N	Toshiba Semiconductor and Storage	IC DRIVER DARL SNK TTL 7CH 16DIP Type: Driver Protocol: - Number of Drivers/Receivers: 7/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 0 V ~ 50 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫4,352
DF2S16CT,L3F	Toshiba Semiconductor and Storage	TVS DIODE 12VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 12V Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 10pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	パッケージ: SOD-882	在庫77,208
TLP591B(C,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV PHVOLT 6-DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): - Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 200µs, 3ms Rise / Fall Time (Typ): - Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 7V Current - Output / Channel: 24µA Voltage - Forward (Vf) (Typ): 1.4V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads Supplier Device Package: 6-DIP, 5 Lead	パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads	在庫17,160
TBD62785APG	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	パッケージ: 18-DIP (0.300", 7.62mm)	在庫16,350
TC78B042FTG,EL	Toshiba Semiconductor and Storage	3 PHASE BLDC CONTROLLER Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Speed Output Configuration: High Side, Low Side Interface: PWM Technology: - Step Resolution: - Applications: Fan Controller Current - Output: 2mA Voltage - Supply: 6V ~ 16.5V Voltage - Load: 4.5V ~ 5.3V Operating Temperature: -40°C ~ 115°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	パッケージ: 32-VFQFN Exposed Pad	在庫30,276
TMPM3HLFDAUG	Toshiba Semiconductor and Storage	MCU,M3,120MHZ,512KBMEM/66KBRAM,Q Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 120MHz Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Number of I/O: 57 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 12x12b SAR; D/A 2x8b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: -	在庫4,800
SSM6J503NU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A 6UDFNB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	パッケージ: -	Request a Quote
RN4989FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR NPN+PNP Q1BSR=47KO Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫24,000
RN1710JE-TE85L-F	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=4.7KOHM Q1BER= Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: -	在庫315
TPCA8045-H-T2L1-VM	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 46A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote
TC62D748CFNAG-ELHB	Toshiba Semiconductor and Storage	IC Type: Linear Topology: Shift Register Internal Switch(s): No Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: No Applications: LED Lighting Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	パッケージ: -	Request a Quote
RN4901FE-LF-CT	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR4.7KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫990

SSM3J14TTE85LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.7A TSM

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.35A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫35,436

TK6A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫2,128

TK35A08N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 35A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

パッケージ: TO-220-3 Full Pack, Isolated Tab

在庫6,816

TK14E65W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,904

TK7S10N1Z,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.5A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,736

TPH11003NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 32A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫28,476

2SA1588-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 100mW
Frequency - Transition: 200MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫3,440

2SA1618-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SMV

Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫6,160

HN2D01JE(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA ESV

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: SOT-553

在庫32,328

TBD62004APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16DIP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.8A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫17,172

TC78H620FNG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 15 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

パッケージ: 16-LSSOP (0.173", 4.40mm Width)

在庫7,712

TB62216FTG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

パッケージ: 48-VFQFN Exposed Pad

在庫7,152

TC78H610FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 800mA
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 15 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

パッケージ: 16-LSSOP (0.173", 4.40mm Width)

在庫7,696

TC58BVG0S3HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63FBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-TFBGA (9x11)

パッケージ: 63-VFBGA

在庫4,048

TC7SZ38F(T5L,JF,T)

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: Open Drain
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: -, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫3,696

TD62083AFNG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-SSOP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 8/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 18-SSOP

パッケージ: 18-LSSOP (0.173", 4.40mm Width)

在庫2,112

TD62003APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 7/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 0 V ~ 50 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫4,352

DF2S16CT,L3F

Toshiba Semiconductor and Storage

TVS DIODE 12VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 12V
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

パッケージ: SOD-882

在庫77,208

TLP591B(C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV PHVOLT 6-DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): -
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 200µs, 3ms
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Photovoltaic
Voltage - Output (Max): 7V
Current - Output / Channel: 24µA
Voltage - Forward (Vf) (Typ): 1.4V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
Supplier Device Package: 6-DIP, 5 Lead

パッケージ: 6-DIP (0.300", 7.62mm), 5 Leads

在庫17,160

TBD62785APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-DIP

パッケージ: 18-DIP (0.300", 7.62mm)

在庫16,350

TC78B042FTG,EL

Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Speed
Output Configuration: High Side, Low Side
Interface: PWM
Technology: -
Step Resolution: -
Applications: Fan Controller
Current - Output: 2mA
Voltage - Supply: 6V ~ 16.5V
Voltage - Load: 4.5V ~ 5.3V
Operating Temperature: -40°C ~ 115°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: 32-VQFN (5x5)

パッケージ: 32-VFQFN Exposed Pad

在庫30,276

TMPM3HLFDAUG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 120MHz
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Number of I/O: 57
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 12x12b SAR; D/A 2x8b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: -

在庫4,800

SSM6J503NU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

パッケージ: -

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RN4989FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=47KO

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫24,000

RN1710JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: -

在庫315

TPCA8045-H-T2L1-VM

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 46A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

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TC62D748CFNAG-ELHB

Toshiba Semiconductor and Storage

IC

Type: Linear
Topology: Shift Register
Internal Switch(s): No
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: No
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 24-SSOP

パッケージ: -

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RN4901FE-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR4.7KOHM Q1BER

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫990