ページ 160 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
SSM3K72CTC,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.15A CST3C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	パッケージ: SC-101, SOT-883	在庫93,378
2SA1429-Y(T2TR,F,M	Toshiba Semiconductor and Storage	TRANS PNP 2A 80V SC71 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	パッケージ: SC-71	在庫7,248
2SA1425-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V SC71 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	パッケージ: SC-71	在庫24,000
RN1962FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫6,560
TA78L008AP(6DNS,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫2,688
TCR5AM08,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 0.8V 500MA 5DFNB Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 55µA ~ 68µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	パッケージ: 4-XDFN Exposed Pad	在庫40,170
TB7101AF(T5L1.5,F)	Toshiba Semiconductor and Storage	IC REG BUCK 1.5V 1A SYNC 8SON Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Fixed Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.5V Voltage - Output (Max): - Current - Output: 1A Frequency - Switching: 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	パッケージ: 8-SMD, Flat Lead	在庫5,136
TBD62064AFAG,EHZ	Toshiba Semiconductor and Storage	IC DRVR TRANS ARRAY 4-CH 24SSOP Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Rds On (Typ): 430 mOhm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	パッケージ: 24-SOP (0.236", 6.00mm Width)	在庫15,936
TB6674PG(C,8,Z,HZ)	Toshiba Semiconductor and Storage	TWO PHASE BIPOLAR STEPPING MOTOR Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 350mA Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 2.7 V ~ 22 V Operating Temperature: -30°C ~ 75°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫16,080
TB6560AHQ,8	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 25HZIP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 34 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP, Formed Leads Supplier Device Package: 25-HZIP	パッケージ: 25-SIP, Formed Leads	在庫24,240
TC58NVG1S3HBAI4	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 63FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)	パッケージ: 63-VFBGA	在庫9,756
TC58CYG0S3HQAIE	Toshiba Semiconductor and Storage	1GB SERIAL NAND 24NM SOP16 1.8V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 155µs Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	パッケージ: 16-SOIC (0.295", 7.50mm Width)	在庫5,168
TC7S02F,LF	Toshiba Semiconductor and Storage	IC GATE NOR 1CH 2-INP SMV Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫23,040
TD62004APG,N	Toshiba Semiconductor and Storage	IC DRIVER DARL SNK TTL 7CH 16DIP Type: Driver Protocol: - Number of Drivers/Receivers: 7/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 0 V ~ 50 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫7,184
DF2B5M4CT,L3F	Toshiba Semiconductor and Storage	ESD DIODE BI-DIRECTIONAL Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 3.6V (Max) Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Current - Peak Pulse (10/1000µs): 2A (8/20µs) Power - Peak Pulse: 30W Power Line Protection: No Applications: - Capacitance @ Frequency: 0.2pF @ 1MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	パッケージ: SOD-882	在庫154,206
TC78S600FNG,C,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 20SSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 800mA Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 15 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP	パッケージ: 20-LSSOP (0.173", 4.40mm Width)	在庫3,040
74LCX126FT	Toshiba Semiconductor and Storage	IC BUF NON-INVERT 3.6V 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫4,368
TMPM36BFYFG(DBB)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 80MHz Connectivity: EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 72 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 66K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 16x12b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	パッケージ: 100-LQFP	在庫18,996
TCR8BM09A-L3F	Toshiba Semiconductor and Storage	800MA LDO, VOUT=0.9V, DROPOUT=17 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 800mA Current - Output: 800mA Current - Quiescent (Iq): 36 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	パッケージ: -	在庫29,700
2SD1223-TE16L1-NQ	Toshiba Semiconductor and Storage	TRANS NPN DARL 80V 4A PW-MOLD Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: -	在庫3,663
RN1906-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫8,544
TC7WH04FU-TE12L	Toshiba Semiconductor and Storage	IC INVERTER 8-SSOP Logic Type: Inverter Number of Circuits: 3 Number of Inputs: 1 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 3.85V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	パッケージ: -	Request a Quote
RN2904FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫24,000
TCR2LE085-LM-CT	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.85V Voltage - Output (Max): - Voltage Dropout (Max): 1.58V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: -	Request a Quote
RN2904-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫8,670
TK110E10PL-S1X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: -	在庫813
RN4988-TE85L-F	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR=22KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫540
SSM3K16CT-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 100MA CST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	パッケージ: -	在庫106,068

SSM3K72CTC,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.15A CST3C

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: CST3C
Package / Case: SC-101, SOT-883

パッケージ: SC-101, SOT-883

在庫93,378

2SA1429-Y(T2TR,F,M

Toshiba Semiconductor and Storage

TRANS PNP 2A 80V SC71

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

パッケージ: SC-71

在庫7,248

2SA1425-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V SC71

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

パッケージ: SC-71

在庫24,000

RN1962FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫6,560

TA78L008AP(6DNS,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫2,688

TCR5AM08,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 0.8V 500MA 5DFNB

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 55µA ~ 68µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

パッケージ: 4-XDFN Exposed Pad

在庫40,170

TB7101AF(T5L1.5,F)

Toshiba Semiconductor and Storage

IC REG BUCK 1.5V 1A SYNC 8SON

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Fixed
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.5V
Voltage - Output (Max): -
Current - Output: 1A
Frequency - Switching: 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

パッケージ: 8-SMD, Flat Lead

在庫5,136

TBD62064AFAG,EHZ

Toshiba Semiconductor and Storage

IC DRVR TRANS ARRAY 4-CH 24SSOP

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Rds On (Typ): 430 mOhm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

パッケージ: 24-SOP (0.236", 6.00mm Width)

在庫15,936

TB6674PG(C,8,Z,HZ)

Toshiba Semiconductor and Storage

TWO PHASE BIPOLAR STEPPING MOTOR

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 350mA
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 2.7 V ~ 22 V
Operating Temperature: -30°C ~ 75°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫16,080

TB6560AHQ,8

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 34 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP, Formed Leads
Supplier Device Package: 25-HZIP

パッケージ: 25-SIP, Formed Leads

在庫24,240

TC58NVG1S3HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 63FBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-TFBGA (9x11)

パッケージ: 63-VFBGA

在庫9,756

TC58CYG0S3HQAIE

Toshiba Semiconductor and Storage

1GB SERIAL NAND 24NM SOP16 1.8V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: -
Access Time: 155µs
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

パッケージ: 16-SOIC (0.295", 7.50mm Width)

在庫5,168

TC7S02F,LF

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫23,040

TD62004APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

Type: Driver
Protocol: -
Number of Drivers/Receivers: 7/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 0 V ~ 50 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫7,184

DF2B5M4CT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Power - Peak Pulse: 30W
Power Line Protection: No
Applications: -
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

パッケージ: SOD-882

在庫154,206

TC78S600FNG,C,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 20SSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1/2, 1/4, 1/8, 1/16
Applications: General Purpose
Current - Output: 800mA
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 15 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-SSOP

パッケージ: 20-LSSOP (0.173", 4.40mm Width)

在庫3,040

74LCX126FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 3.6V 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫4,368

TMPM36BFYFG(DBB)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 80MHz
Connectivity: EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 72
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 66K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 16x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

パッケージ: 100-LQFP

在庫18,996

TCR8BM09A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.9V, DROPOUT=17

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 800mA
Current - Output: 800mA
Current - Quiescent (Iq): 36 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

パッケージ: -

在庫29,700

2SD1223-TE16L1-NQ

Toshiba Semiconductor and Storage

TRANS NPN DARL 80V 4A PW-MOLD

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: -

在庫3,663

RN1906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫8,544

TC7WH04FU-TE12L

Toshiba Semiconductor and Storage

IC INVERTER 8-SSOP

Logic Type: Inverter
Number of Circuits: 3
Number of Inputs: 1
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 3.85V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

パッケージ: -

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RN2904FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫24,000

TCR2LE085-LM-CT

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.58V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: -

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RN2904-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫8,670

TK110E10PL-S1X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 21A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: -

在庫813

RN4988-TE85L-F

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR=22KOHM Q1BER

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫540

SSM3K16CT-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 100MA CST3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3
Package / Case: SC-101, SOT-883

パッケージ: -

在庫106,068