Toshiba Semiconductor and Storage 製品

TPC8026(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 6.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

パッケージ: 8-SOIC (0.173", 4.40mm Width)

TK7J90E,S1E

Toshiba Semiconductor and Storage

MOSFET N-CH 900V TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

SSM3J118TU(TE85L)

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.4A UFM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 240 mOhm @ 650mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

パッケージ: 3-SMD, Flat Leads

TPN11006NL,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 17A 8TSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

2SC2229-Y(MIT1,F,M

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 150V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Power - Max: 800mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

HN1C01FU-GR,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

RN1906(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

1SS294,LF

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA SMINI

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 40V
• Capacitance @ Vr, F: 25pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini
• Operating Temperature - Junction: 125°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

TCR2EN115,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.15V 200MA 4SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA
• PSRR: 73dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: 4-XFDFN Exposed Pad

TCR2LF33,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

TC58BVG1S3HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

TC4SU11F(T5L,F,T)

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 3 V ~ 18 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 3.4mA, 3.4mA
• Logic Level - Low: 1 V ~ 3 V
• Logic Level - High: 4 V ~ 12 V
• Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

TC7SH86FSTPL3

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP FSV

• Logic Type: XOR (Exclusive OR)
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5V
• Logic Level - High: 1.5V
• Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: fSV
• Package / Case: SOT-953

パッケージ: SOT-953

TC74HC14AFELF

Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14SOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.3 V ~ 1.5 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOP
• Package / Case: 14-SOIC (0.173", 4.40mm Width)

パッケージ: 14-SOIC (0.173", 4.40mm Width)

74HC02D(BJ)

Toshiba Semiconductor and Storage

IC GATE NOR QUAD 2 IN 14SOIC

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 16ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

パッケージ: 14-SOIC (0.154", 3.90mm Width)

TL1F2-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

• Color: White, Cool
• CCT (K): 5000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 133 lm/W
• CRI (Color Rendering Index): 70
• Current - Max: 550mA
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 2020 (5050 Metric)
• Supplier Device Package: 6450
• Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
• Height - Seated (Max): 0.057" (1.45mm)

パッケージ: 2020 (5050 Metric)

TODX2353(F)

Toshiba Semiconductor and Storage

TXRX MOD OPTICAL 500KBPS 650NM

• Data Rate: 500kbps
• Wavelength: 650nm
• Applications: General Purpose
• Voltage - Supply: 4.75 V ~ 5.25 V
• Connector Type: JIS F07
• Mounting Type: Through Hole

パッケージ: -

DF2B7AFS,L3M

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: 20V
• Current - Peak Pulse (10/1000µs): 4A (8/20µs)
• Power - Peak Pulse: 80W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 8.5pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: SOD-923

パッケージ: SOD-923

DF2B6M4SL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5.5VWM 25VC SL2-2

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 5.6V
• Voltage - Clamping (Max) @ Ipp: 25V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.2pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2

パッケージ: 0201 (0603 Metric)

TLP222G(F)

Toshiba Semiconductor and Storage

IC PHOTOCOUPLER PHOTORELAY 4-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP
• Relay Type: Relay

パッケージ: 4-DIP (0.300", 7.62mm)

TLP4006G(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 8-DIP

• Circuit: DPST-NO/NC (1 Form A and B)
• Output Type: AC, DC
• On-State Resistance (Max): 25 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

パッケージ: 8-DIP (0.300", 7.62mm)

TLP176GA(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

パッケージ: 4-SOP (0.173", 4.40mm)

TC78H621FNG,EL

Toshiba Semiconductor and Storage

BRUSHED DC MOTOR DRIVER DUAL-CHA

• Motor Type - Stepper: -
• Motor Type - AC, DC: -
• Function: -
• Output Configuration: -
• Interface: -
• Technology: -
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

TK11S10N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

TCR5RG14A-LF

Toshiba Semiconductor and Storage

LDO REG, IOUT: 500MA VOUT: 1.4V

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): 13 µA
• Current - Supply (Max): -
• PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, WLCSP
• Supplier Device Package: 4-WCSPF (0.65x0.65)

パッケージ: -

RN2909-LF-CT

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR47KOHM Q1BER22KOH

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

パッケージ: -

RN2111-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

パッケージ: -

CRS09-TE85L

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A SFLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: -

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