ページ 63 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
2SD2257,NIKKIQ(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 100V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Power - Max: 2W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫3,136
RN1110CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫3,488
RN1312(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫23,196
RN1103MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 150MW VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: SOT-723	在庫87,444
HN2S03FUTE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY SCHOTTKY 20V US6 Diode Configuration: 3 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io) (per Diode): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫28,920
TA78DS05CP(T6ND,AF	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫4,800
TCR2EN105,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.05V 200MA 4SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.05V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: 4-XFDFN Exposed Pad	在庫105,186
TCR2EF18,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫52,458
TBD62308APG,HZ	Toshiba Semiconductor and Storage	IC LOAD SWITCH 16DIP Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 370 mOhm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫17,796
TC58NVG1S3ETA00	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫32,088
TC58BVG1S3HTA00	Toshiba Semiconductor and Storage	IC EEPROM 2GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	パッケージ: 48-TFSOP (0.724", 18.40mm Width)	在庫5,584
TC7S04F,LF	Toshiba Semiconductor and Storage	IC INVERTER 74HC04 5-SSOP Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫256,188
TC7WZ74FK,LJ(CT	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 8SSOP Function: Set(Preset) and Reset Type: D-Type Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 1 Clock Frequency: 200MHz Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Iq): 10µA Input Capacitance: 3pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width)	パッケージ: 8-VFSOP (0.091", 2.30mm Width)	在庫26,640
TC7SZ34AFS,L3J(T	Toshiba Semiconductor and Storage	IC GATE USV L-MOS FSV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-953 Supplier Device Package: fSV	パッケージ: SOT-953	在庫7,568
TC7SH126F,LJ(CT	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 3-ST SMV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫29,418
TL1L4-LW1,L	Toshiba Semiconductor and Storage	LED LETERAS WARM WHT 3000K 2SMD Color: White, Warm CCT (K): 3000K Flux @ 85°C, Current - Test: 120 lm (105 lm ~ 135 lm) Flux @ 25°C, Current - Test: - Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 122 lm/W CRI (Color Rendering Index): 80 Current - Max: 1.5A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm)	パッケージ: 1414 (3535 Metric)	在庫8,154
TLWNF1109(T11(O	Toshiba Semiconductor and Storage	LED WHITE 4SMD Color: White Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 3200mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.5V Current - Test: 40mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: - Wavelength - Peak: - Features: - Package / Case: 4-SMD, J-Lead Supplier Device Package: - Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm	パッケージ: 4-SMD, J-Lead	在庫8,532
TLWLF1108(T11(O	Toshiba Semiconductor and Storage	LED WARM WHITE 4SMD Color: White, Warm Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 2500mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.5V Current - Test: 40mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: - Wavelength - Peak: - Features: - Package / Case: 4-SMD, J-Lead Supplier Device Package: - Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm	パッケージ: 4-SMD, J-Lead	在庫3,222
DF2S6.8SC(TPL3)	Toshiba Semiconductor and Storage	TVS DIODE 5VWM SC2 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2	パッケージ: 2-SMD, No Lead	在庫120,000
DF2S5.6ASL,L3F	Toshiba Semiconductor and Storage	TVS DIODE 3.5VWM SL2-2 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 3.5V (Max) Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2	パッケージ: 0201 (0603 Metric)	在庫279,954
TLP352(D4,F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV GATE DRVR 8DIP Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2A, 2A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Approvals: CSA, cUL, UL, VDE	パッケージ: 8-DIP (0.300", 7.62mm)	在庫5,724
TCR3DG18,LF	Toshiba Semiconductor and Storage	300MA LDO VOUT=1.8V DROPOUT=195M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.365V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	パッケージ: 4-XFBGA, CSPBGA	在庫2,448
RN2102-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: -	在庫11,820
RN2413-LF	Toshiba Semiconductor and Storage	PB-F S-MINI PLN (LF) TRANSISTOR Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	Request a Quote
TTA1713-Y-LF	Toshiba Semiconductor and Storage	TRANS PNP 45V 0.5A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200 mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	在庫9,000
1SV308-L3F	Toshiba Semiconductor and Storage	RF DIODE PIN 30V ESC Diode Type: PIN - Single Voltage - Peak Reverse (Max): 30V Current - Max: 50 mA Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Power Dissipation (Max): - Operating Temperature: 125°C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	パッケージ: -	在庫18,873
TK2R9E10PL-S1X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: -	在庫141
TC7SH08FS-L3F	Toshiba Semiconductor and Storage	IC GATE AND 1CH 2-INP FSV Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	パッケージ: -	在庫15,036

2SD2257,NIKKIQ(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 100V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Power - Max: 2W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫3,136

RN1110CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫3,488

RN1312(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫23,196

RN1103MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: SOT-723

在庫87,444

HN2S03FUTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 20V US6

Diode Configuration: 3 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io) (per Diode): 50mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 20V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫28,920

TA78DS05CP(T6ND,AF

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫4,800

TCR2EN105,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.05V 200MA 4SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.05V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: 4-XFDFN Exposed Pad

在庫105,186

TCR2EF18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫52,458

TBD62308APG,HZ

Toshiba Semiconductor and Storage

IC LOAD SWITCH 16DIP

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 370 mOhm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫17,796

TC58NVG1S3ETA00

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫32,088

TC58BVG1S3HTA00

Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

パッケージ: 48-TFSOP (0.724", 18.40mm Width)

在庫5,584

TC7S04F,LF

Toshiba Semiconductor and Storage

IC INVERTER 74HC04 5-SSOP

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫256,188

TC7WZ74FK,LJ(CT

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

Function: Set(Preset) and Reset
Type: D-Type
Output Type: Push-Pull
Number of Elements: 1
Number of Bits per Element: 1
Clock Frequency: 200MHz
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Iq): 10µA
Input Capacitance: 3pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: 8-VFSOP (0.091", 2.30mm Width)

在庫26,640

TC7SZ34AFS,L3J(T

Toshiba Semiconductor and Storage

IC GATE USV L-MOS FSV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: fSV

パッケージ: SOT-953

在庫7,568

TC7SH126F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3-ST SMV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫29,418

TL1L4-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

Color: White, Warm
CCT (K): 3000K
Flux @ 85°C, Current - Test: 120 lm (105 lm ~ 135 lm)
Flux @ 25°C, Current - Test: -
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 122 lm/W
CRI (Color Rendering Index): 80
Current - Max: 1.5A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.085" (2.15mm)

パッケージ: 1414 (3535 Metric)

在庫8,154

TLWNF1109(T11(O

Toshiba Semiconductor and Storage

LED WHITE 4SMD

Color: White
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 3200mcd
Lens Style/Size: Oval with Flat Top
Voltage - Forward (Vf) (Typ): 3.5V
Current - Test: 40mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: -
Wavelength - Peak: -
Features: -
Package / Case: 4-SMD, J-Lead
Supplier Device Package: -
Size / Dimension: 3.20mm L x 2.90mm W
Height (Max): 2.10mm

パッケージ: 4-SMD, J-Lead

在庫8,532

TLWLF1108(T11(O

Toshiba Semiconductor and Storage

LED WARM WHITE 4SMD

Color: White, Warm
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 2500mcd
Lens Style/Size: Oval with Flat Top
Voltage - Forward (Vf) (Typ): 3.5V
Current - Test: 40mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: -
Wavelength - Peak: -
Features: -
Package / Case: 4-SMD, J-Lead
Supplier Device Package: -
Size / Dimension: 3.20mm L x 2.90mm W
Height (Max): 2.10mm

パッケージ: 4-SMD, J-Lead

在庫3,222

DF2S6.8SC(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE 5VWM SC2

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SC2

パッケージ: 2-SMD, No Lead

在庫120,000

DF2S5.6ASL,L3F

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM SL2-2

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Supplier Device Package: SL2

パッケージ: 0201 (0603 Metric)

在庫279,954

TLP352(D4,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRVR 8DIP

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 2A, 2A
Current - Peak Output: 2.5A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Approvals: CSA, cUL, UL, VDE

パッケージ: 8-DIP (0.300", 7.62mm)

在庫5,724

TCR3DG18,LF

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.8V DROPOUT=195M

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.365V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPE (0.65x0.65)

パッケージ: 4-XFBGA, CSPBGA

在庫2,448

RN2102-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: -

在庫11,820

RN2413-LF

Toshiba Semiconductor and Storage

PB-F S-MINI PLN (LF) TRANSISTOR

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

Request a Quote

TTA1713-Y-LF

Toshiba Semiconductor and Storage

TRANS PNP 45V 0.5A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Power - Max: 200 mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

在庫9,000

1SV308-L3F

Toshiba Semiconductor and Storage

RF DIODE PIN 30V ESC

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 30V
Current - Max: 50 mA
Capacitance @ Vr, F: 0.5pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Power Dissipation (Max): -
Operating Temperature: 125°C (TJ)
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

パッケージ: -

在庫18,873

TK2R9E10PL-S1X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: -

在庫141

TC7SH08FS-L3F

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP FSV

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

パッケージ: -

在庫15,036