ページ 76 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
SSM3K17SU,LF(D	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 100MA USM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫7,488
SSM3K01T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 3.2A TSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.6A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫29,748
SSM3J108TU(TE85L)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 1.8A UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 158 mOhm @ 800mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	パッケージ: 3-SMD, Flat Leads	在庫7,824
TK12A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 12A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫7,808
TPH5R906NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 60V 28A 8-SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫120,000
SSM6J512NU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 10A UDFN6B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	パッケージ: 6-WDFN Exposed Pad	在庫29,202
RN1108ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫4,960
TCR4DG28,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 420MA WCSP4E Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 420mA Current - Output: 420mA Current - Quiescent (Iq): - Current - Supply (Max): 68µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫102,018
TCR2LN10,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: 4-XFDFN Exposed Pad	在庫87,360
TCV7100AF(TE12L,Q)	Toshiba Semiconductor and Storage	IC REG BUCK ADJ 2.5A SYNC 8SOPA Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.8V Voltage - Output (Max): 5.5V Current - Output: 2.5A Frequency - Switching: 800kHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-SOP Advance (5x5)	パッケージ: 8-PowerVDFN	在庫6,592
TBD62083AFG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 8CH 0.5A 18SOP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): - Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 18-SOIC (0.276", 7.00mm Width) Supplier Device Package: 18-SOP	パッケージ: 18-SOIC (0.276", 7.00mm Width)	在庫3,232
TCK22923G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 25 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	パッケージ: 6-UFBGA, WLCSP	在庫49,254
TC7SZ02FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NOR 1CH 2-INP SMV Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫7,088
TC7SH125FE,LM	Toshiba Semiconductor and Storage	IC BUS BUFF DVR TRI-ST ESV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: SOT-553	在庫4,000
TMP86FS49BFG(ZHZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 60KB FLASH 64QFP Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: I2C, SIO, UART/USART Peripherals: LED, PWM, WDT Number of I/O: 56 Program Memory Size: 60KB (60K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-BQFP Supplier Device Package: 64-QFP (14x14)	パッケージ: 64-BQFP	在庫3,120
TL1WK-LW1,LCS	Toshiba Semiconductor and Storage	LED LETERAS WARM WHT 3000K 2SMD Color: White, Warm CCT (K): 3000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 19 lm (Typ) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 112 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	パッケージ: 2-SMD, No Lead	在庫2,214
DF2B6.8M1ACT,L3F	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 20VC CST2 Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Power - Peak Pulse: 50W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	パッケージ: SOD-882	在庫263,280
TLP597A(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUT 3MA 6-DIP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 500mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Relay Type: Relay	パッケージ: 6-DIP (0.300", 7.62mm)	在庫7,068
TLP331(BV,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	パッケージ: 6-DIP (0.300", 7.62mm)	在庫2,466
TLP292(TPL,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	パッケージ: 4-SOIC (0.179", 4.55mm)	在庫4,482
TCR3DF17,LM(CT	Toshiba Semiconductor and Storage	300MA LDO VOUT=1.7V DROPOUT=230M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.7V Voltage - Output (Max): - Voltage Dropout (Max): 0.47V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Inrush Current, Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫6,928
TCR2EE335,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT3.35V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,408
TDTA114Y-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SOT23 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: -	在庫8,970
SSM6P39TU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 1.5A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	パッケージ: -	在庫26,805
RN1132MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 200 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: -	在庫24,000
TPH1R306P1-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 100A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	在庫24,423
TPHR7404PU-L1Q-M	Toshiba Semiconductor and Storage	40V UMOS9 S 0.65MOHM SOP-ADV(N) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: -	Request a Quote
TB9045FNG-120-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE VOLTAGE REGULATOR Applications: Power Supply, Automotive Applications Voltage - Input: - Number of Outputs: 3 Voltage - Output: 6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	パッケージ: -	Request a Quote

SSM3K17SU,LF(D

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫7,488

SSM3K01T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 3.2A TSM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1.6A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫29,748

SSM3J108TU(TE85L)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 1.8A UFM

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 158 mOhm @ 800mA, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

パッケージ: 3-SMD, Flat Leads

在庫7,824

TK12A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 12A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫7,808

TPH5R906NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 28A 8-SOP ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 14A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫120,000

SSM6J512NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 12V 10A UDFN6B

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 4A, 8V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

パッケージ: 6-WDFN Exposed Pad

在庫29,202

RN1108ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫4,960

TCR4DG28,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 420MA WCSP4E

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 420mA
Current - Output: 420mA
Current - Quiescent (Iq): -
Current - Supply (Max): 68µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫102,018

TCR2LN10,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: 4-XFDFN Exposed Pad

在庫87,360

TCV7100AF(TE12L,Q)

Toshiba Semiconductor and Storage

IC REG BUCK ADJ 2.5A SYNC 8SOPA

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 5.5V
Current - Output: 2.5A
Frequency - Switching: 800kHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-SOP Advance (5x5)

パッケージ: 8-PowerVDFN

在庫6,592

TBD62083AFG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18SOP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): -
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Supplier Device Package: 18-SOP

パッケージ: 18-SOIC (0.276", 7.00mm Width)

在庫3,232

TCK22923G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 25 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

パッケージ: 6-UFBGA, WLCSP

在庫49,254

TC7SZ02FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP SMV

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫7,088

TC7SH125FE,LM

Toshiba Semiconductor and Storage

IC BUS BUFF DVR TRI-ST ESV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: SOT-553

在庫4,000

TMP86FS49BFG(ZHZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 60KB FLASH 64QFP

Core Processor: 870/C
Core Size: 8-Bit
Speed: 16MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: LED, PWM, WDT
Number of I/O: 56
Program Memory Size: 60KB (60K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 2K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-BQFP
Supplier Device Package: 64-QFP (14x14)

パッケージ: 64-BQFP

在庫3,120

TL1WK-LW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

Color: White, Warm
CCT (K): 3000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 19 lm (Typ)
Current - Test: 60mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 112 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: 165°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

パッケージ: 2-SMD, No Lead

在庫2,214

DF2B6.8M1ACT,L3F

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC CST2

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Power - Peak Pulse: 50W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2

パッケージ: SOD-882

在庫263,280

TLP597A(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 6-DIP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 500mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Relay Type: Relay

パッケージ: 6-DIP (0.300", 7.62mm)

在庫7,068

TLP331(BV,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV TRANS W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

パッケージ: 6-DIP (0.300", 7.62mm)

在庫2,466

TLP292(TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

パッケージ: 4-SOIC (0.179", 4.55mm)

在庫4,482

TCR3DF17,LM(CT

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.7V DROPOUT=230M

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.7V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.47V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Inrush Current, Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫6,928

TCR2EE335,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT3.35V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,408

TDTA114Y-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SOT23

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: -

在庫8,970

SSM6P39TU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.5A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

パッケージ: -

在庫26,805

RN1132MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 200 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: -

在庫24,000

TPH1R306P1-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 100A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

在庫24,423

TPHR7404PU-L1Q-M

Toshiba Semiconductor and Storage

40V UMOS9 S 0.65MOHM SOP-ADV(N)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 400A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: -

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TB9045FNG-120-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

Applications: Power Supply, Automotive Applications
Voltage - Input: -
Number of Outputs: 3
Voltage - Output: 6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

パッケージ: -

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