ページ 97 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TPC8032-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 15A SOP8 2-6J1B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	パッケージ: 8-SOIC (0.173", 4.40mm Width)	在庫6,064
TPCA8062-H,LQ(CM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 28A 8SOP-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫2,720
TK46E08N1,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫7,520
SSM3K329R,LF	Toshiba Semiconductor and Storage	MOSFET N CH 30V 3.5A 2-3Z1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	パッケージ: SOT-23-3 Flat Leads	在庫125,616
2SC4793(LBSAN,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫3,712
2SA1680,F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫3,120
2SC3074-O(Q)	Toshiba Semiconductor and Storage	TRANS NPN 50V 5A 2-7B1A Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,736
RN2964(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫5,328
RN4982FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫5,856
TC74LCX32FTELM	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-TSSOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫2,100
TC7SZ86FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE XOR 1CH 2-INP USV Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫27,876
74HCT541D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 5.5V 20SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	パッケージ: 20-SOIC (0.295", 7.50mm Width)	在庫6,752
TL1L3-WH1,L	Toshiba Semiconductor and Storage	LED LETERAS NEU WHITE 4000K 2SMD Color: White, Neutral CCT (K): 4000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 129 lm (Typ) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 129 lm/W CRI (Color Rendering Index): 80 Current - Max: 1A Viewing Angle: 100° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.099" (2.52mm)	パッケージ: 1414 (3535 Metric)	在庫8,658
TLP117(TPR,F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PSH PULL 6MFSOP-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 50MBd Propagation Delay tpLH / tpHL (Max): 20ns, 20ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.6V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	パッケージ: 6-SOIC (0.173", 4.40mm Width) 5 Leads	在庫5,688
TLP754(F)	Toshiba Semiconductor and Storage	OPTOISO 5KV OPEN COLLECTOR 8DIP Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Open Collector Current - Output / Channel: 15mA Data Rate: 1Mbps Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Rise / Fall Time (Typ): - Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫2,142
TB67S141HG	Toshiba Semiconductor and Storage	2 PHASE UNIPOLAR STEPPING MOTOR Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 40 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Supplier Device Package: 25-HZIP	パッケージ: 25-SIP Formed Leads	在庫4,656
74VHCT244AFT	Toshiba Semiconductor and Storage	IC BUF NON-INVERT 5.5V 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	パッケージ: 20-TSSOP (0.173", 4.40mm Width)	在庫6,368
74VHC9126FT	Toshiba Semiconductor and Storage	X34 PB-F UNIVERSAL SCHMITT BUFFE Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 5 Input Type: Schmitt Trigger Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOPB	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫26,670
TCK128AG-LF	Toshiba Semiconductor and Storage	IC PWR SWITCH Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
RN49A1-TE85L-F	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR=2.2KOHM Q1BE Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms, 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	Request a Quote
TCR2LN285-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.85V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.36V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: -	在庫29,970
TC74LCX374FT-EL	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150 MHz Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Input Capacitance: 7 pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	パッケージ: -	Request a Quote
TK055U60Z1-RQ	Toshiba Semiconductor and Storage	600V DTMOS VI TOLL 55MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.69mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	パッケージ: -	在庫10,701
TCR2EN35-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.5V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.18V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: -	在庫22,500
TCR3RM28A-LF	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 300MA 4DFNC Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.13V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 100dB (1kHz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 4-DFNC (1x1)	パッケージ: -	在庫162
TCR3UF20A-LM-CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2V 300MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2V Voltage - Output (Max): - Voltage Dropout (Max): 0.412V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: -	在庫14,514
TK430A60F-S4X-S	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.75mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote
RN1908FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫24,000

TPC8032-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A SOP8 2-6J1B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

パッケージ: 8-SOIC (0.173", 4.40mm Width)

在庫6,064

TPCA8062-H,LQ(CM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 28A 8SOP-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 14A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫2,720

TK46E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫7,520

SSM3K329R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

パッケージ: SOT-23-3 Flat Leads

在庫125,616

2SC4793(LBSAN,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫3,712

2SA1680,F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫3,120

2SC3074-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 50V 5A 2-7B1A

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,736

RN2964(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫5,328

RN4982FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫5,856

TC74LCX32FTELM

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫2,100

TC7SZ86FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫27,876

74HCT541D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V 20SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 6mA, 6mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

パッケージ: 20-SOIC (0.295", 7.50mm Width)

在庫6,752

TL1L3-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

Color: White, Neutral
CCT (K): 4000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 129 lm (Typ)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 129 lm/W
CRI (Color Rendering Index): 80
Current - Max: 1A
Viewing Angle: 100°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.099" (2.52mm)

パッケージ: 1414 (3535 Metric)

在庫8,658

TLP117(TPR,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 50MBd
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Rise / Fall Time (Typ): 3ns, 3ns
Voltage - Forward (Vf) (Typ): 1.6V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
Supplier Device Package: 6-MFSOP, 5 Lead

パッケージ: 6-SOIC (0.173", 4.40mm Width) 5 Leads

在庫5,688

TLP754(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV OPEN COLLECTOR 8DIP

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Input Type: DC
Output Type: Open Collector
Current - Output / Channel: 15mA
Data Rate: 1Mbps
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Rise / Fall Time (Typ): -
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫2,142

TB67S141HG

Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 40 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 25-SIP Formed Leads
Supplier Device Package: 25-HZIP

パッケージ: 25-SIP Formed Leads

在庫4,656

74VHCT244AFT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

パッケージ: 20-TSSOP (0.173", 4.40mm Width)

在庫6,368

74VHC9126FT

Toshiba Semiconductor and Storage

X34 PB-F UNIVERSAL SCHMITT BUFFE

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 5
Input Type: Schmitt Trigger
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOPB

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫26,670

TCK128AG-LF

Toshiba Semiconductor and Storage

IC PWR SWITCH

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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RN49A1-TE85L-F

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms, 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

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TCR2LN285-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.85V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.36V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: -

在庫29,970

TC74LCX374FT-EL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150 MHz
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Input Capacitance: 7 pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

パッケージ: -

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TK055U60Z1-RQ

Toshiba Semiconductor and Storage

600V DTMOS VI TOLL 55MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

パッケージ: -

在庫10,701

TCR2EN35-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.5V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.18V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: -

在庫22,500

TCR3RM28A-LF

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 300MA 4DFNC

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.13V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 100dB (1kHz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 4-DFNC (1x1)

パッケージ: -

在庫162

TCR3UF20A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2V 300MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.412V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: -

在庫14,514

TK430A60F-S4X-S

Toshiba Semiconductor and Storage

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.75mA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: -

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RN1908FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫24,000