Vishay Semiconductor Diodes Division 製品

BZX55F5V1-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 5.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

SMZJ3806B-E3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 51V 1.5W DO214AA

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

MMSZ5267C-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 75V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 270 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 56V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZX384B36-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 25.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: SC-76, SOD-323

GI916-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 750ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: DO-201AD, Axial

VI20100S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 20A TO262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

VS-50WQ10FNTRL-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: 183pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

BYG10DHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

AR1PM-M3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1000V 1A DO220AA

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 1µA @ 1000V
• Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-220AA

S07B-M-18

Vishay Semiconductor Diodes Division

DIODE STD REC 100V DO219AB-M

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1800ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

MBR30H90CT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 90V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 90V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

IRKC196/08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 195A INT-A-PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 195A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: Module

パッケージ: INT-A-PAK (3)

FEPB16FT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 300V 8A TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VB20120C-E3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 120V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 120V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VI20100C-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-262AA

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

3N252-E4/51

Vishay Semiconductor Diodes Division

BRIDGE RECT 1.5A 1000V KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

パッケージ: 4-SIP, KBPM

P6KE220CA/54

Vishay Semiconductor Diodes Division

TVS DIODE 185VWM 328VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 185V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 1.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SMAJ48C-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 85.5VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 85.5V
• Current - Peak Pulse (10/1000µs): 4.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

1N6284AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 30.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

TPC51AHM3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 70.1VC 21.4A TO277A

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 43.6V
• Voltage - Breakdown (Min): 48.5V
• Voltage - Clamping (Max) @ Ipp: 70.1V
• Current - Peak Pulse (10/1000µs): 21.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

パッケージ: TO-277, 3-PowerDFN

SMBJ40CAHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 40VWM 64.5VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 64.5V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SMB10J11A-E3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 54.9A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: DO-214AA, SMB

P4SMA350AHE3_A/H

Vishay Semiconductor Diodes Division

TVS DIODE 300VWM 482VC DO-214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 300V
• Voltage - Breakdown (Min): 333V
• Voltage - Clamping (Max) @ Ipp: 482V
• Current - Peak Pulse (10/1000µs): 620mA
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

SMA5J7.0CAHE3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 12VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 41.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

SMP18-M3/85A

Vishay Semiconductor Diodes Division

TVS DIODE 18VWM 32.2VC SMP

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 32.2V
• Current - Peak Pulse (10/1000µs): 12.4A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

パッケージ: DO-220AA

GSOT04-HG3-08

Vishay Semiconductor Diodes Division

TVS DIODE 4VWM 14.3VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 4V (Max)
• Voltage - Breakdown (Min): 5V
• Voltage - Clamping (Max) @ Ipp: 14.3V
• Current - Peak Pulse (10/1000µs): 30A (8/20µs)
• Power - Peak Pulse: 429W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 310pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

SMCJ150A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 150VWM 243VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

P6SMB47A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 40.2VWM 64.8VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: DO-214AA, SMB