Vishay Semiconductor Diodes Division 製品

SML4731A-E3/61

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 1W DO214AC

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZD27C120P-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

MMSZ5247C-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 17V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

PLZ30D-G3/H

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 500MW DO219AC

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±3%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 23V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AC
• Supplier Device Package: DO-219AC (microSMF)

パッケージ: DO-219AC

BZT52C8V2-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 8.2V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZD27C36P-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

AZ23C36-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

VS-31DQ10GTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 3.3A C16

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3.3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: 110pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: C-16
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: DO-201AD, Axial

RS1PD-E3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

UG12HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 12A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 150°C (Max)

パッケージ: TO-220-2

BYW84-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.5µs
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: SOD-64, Axial

SS3H10-M3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 100V DO-214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-214AB, SMC

BYM07-150HE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AA (Glass)

VS-C4PH3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-3

VS-70HFR140

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 70A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

MB3045S-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 30A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BAT54-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: 125°C (Max)

パッケージ: TO-236-3, SC-59, SOT-23-3

VSKJ320-20

Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 320A MAGN-A-PAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io) (per Diode): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 2000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?

パッケージ: 3-MAGN-A-PAK?

VB10150C-M3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 150V TO-263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 150V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

94MT160KB

Vishay Semiconductor Diodes Division

RECT BRIDGE 1600V 90A MTK

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 90A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MTK
• Supplier Device Package: MTK

パッケージ: MTK

TMPG06-8.2HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 6.63VWM 12.5VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.63V
• Voltage - Breakdown (Min): 7.38V
• Voltage - Clamping (Max) @ Ipp: 12.5V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

パッケージ: MPG06, Axial

SMCJ78CHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 78VWM 139VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 139V
• Current - Peak Pulse (10/1000µs): 10.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

5KP33A-E3/51

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 93.8A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

パッケージ: P600, Axial

5KP48A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 77.4VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 64.6A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

パッケージ: P600, Axial

SA170AHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 170VWM 275VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 1.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

TMPG06-30AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 41.4VC 9.7A MPG06

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.4V
• Current - Peak Pulse (10/1000µs): 9.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

パッケージ: MPG06, Axial

SM5S11AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 18.2VC 198A DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 198A
• Power - Peak Pulse: 3600W (3.6kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

パッケージ: DO-218AB

P6SMB68A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 58.1VWM 92VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 58.1V
• Voltage - Breakdown (Min): 64.6V
• Voltage - Clamping (Max) @ Ipp: 92V
• Current - Peak Pulse (10/1000µs): 6.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: DO-214AA, SMB