Vishay Semiconductor Diodes Division 製品

16TTS12STRR

Vishay Semiconductor Diodes Division

SCR PHASE CONT 1200V 16A D2PAK

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Voltage - On State (Vtm) (Max): 1.4V
• Current - On State (It (AV)) (Max): 10A
• Current - On State (It (RMS)) (Max): 16A
• Current - Hold (Ih) (Max): 100mA
• Current - Off State (Max): 500µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-ST333S04PFL0

Vishay Semiconductor Diodes Division

SCR PHASE CONT 400V 330A TO-118

• Voltage - Off State: 400V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.96V
• Current - On State (It (AV)) (Max): 330A
• Current - On State (It (RMS)) (Max): 518A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 50mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A, 11520A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AE, TO-118-4, Stud
• Supplier Device Package: TO-209AE (TO-118)

パッケージ: TO-209AE, TO-118-4, Stud

VS-VSKU71/08

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 75A ADD-A-PAK

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 75A
• Current - On State (It (RMS)) (Max): 115A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1300A, 1360A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

パッケージ: ADD-A-PAK (3 + 4)

VLZ2V4B-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 2.53V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 2.53V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 70µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

パッケージ: SOD-80 Variant

BZD27B27P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 27V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

BZT52B2V4-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

TZQ5252B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

パッケージ: SOD-80 Variant

TLZ3V9B-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 3.9V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

TLZ36-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

BZX55B2V4-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 500MW DO35

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

GI821-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A P600

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 300pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: P600, Axial

S3DHE3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

S1DHE3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

BYS10-25HE3/TR3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 25V 1.5A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 25V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 25V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-214AC, SMA

VS-6FR40

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 12mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-203AA, DO-4, Stud

V30100SGHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V TO-220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 350µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-220-3

BYT51K-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A SOD57

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 1µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: SOD-57, Axial

UF4005-M3/73

Vishay Semiconductor Diodes Division

DIODE 1A 600V 75NS DO-204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

BAQ34-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 200MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1nA @ 30V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AC, MINI-MELF, SOD-80

1N3611GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

AU2PJ-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.6A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 42pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

1N5626-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 7.5µs
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: SOD-64, Axial

VS-MBRB2080CTGPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 10A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 80V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VT40L45PW-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A TMBS

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-3PW

パッケージ: TO-3P-3 Full Pack

SA11C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 20.1VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 20.1V
• Current - Peak Pulse (10/1000µs): 24.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

VTVS10ASMF-HM3-18

Vishay Semiconductor Diodes Division

TVS DIODE 16.3VC 23.2A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.3V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.3V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 988pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

P4SMA7.5A-M3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 6.4VWM 11.3VC DO-214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6.4V
• Voltage - Breakdown (Min): 7.13V
• Voltage - Clamping (Max) @ Ipp: 11.3V
• Current - Peak Pulse (10/1000µs): 35.4A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

ICTE12C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 12VWM 17.1VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 14.1V
• Voltage - Clamping (Max) @ Ipp: 17.1V
• Current - Peak Pulse (10/1000µs): 70A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial