Vishay Semiconductor Diodes Division 製品

VS-GB100TH120N

Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Power - Max: 833W
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
• Current - Collector Cutoff (Max): 5mA
• Input Capacitance (Cies) @ Vce: 8.58nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Double INT-A-PAK (3 + 4)
• Supplier Device Package: Double INT-A-PAK

パッケージ: Double INT-A-PAK (3 + 4)

1N5260B-T

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW DO35

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

TZM5226F-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER SOD80

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80

パッケージ: DO-213AC, MINI-MELF, SOD-80

BZX55F30-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 500MW DO35

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 22V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

SMAZ5928B-M3/5A

Vishay Semiconductor Diodes Division

DIODE ZENER 13V 500MW DO214AC

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.9V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

パッケージ: DO-214AC, SMA

BZX84B15-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

60HFUR-300

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 60A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80ns
• Current - Reverse Leakage @ Vr: 50µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

IRD3911

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 350ns
• Current - Reverse Leakage @ Vr: 80µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

8TQ100

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

VS-VSKE56/16

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 60A ADDAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: ADD-A-PAK (3)

VS-30EPF04PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 30A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 160ns
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-247-2

VS-12TQ035STRRHM3

Vishay Semiconductor Diodes Division

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 35V
• Capacitance @ Vr, F: 900pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GPP60A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 6A P600

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: P600, Axial

VS-30BQ015-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3.0A SMC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 15V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 350mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 15V
• Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC
• Operating Temperature - Junction: -55°C ~ 125°C

パッケージ: DO-214AB, SMC

VS-50WQ03FNTR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: 590pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-20MQ100-M3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: 38pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

VS-15AWL06FNTR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

VT6045C-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 30A TO-220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 640mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

KBP02M-M4/51

Vishay Semiconductor Diodes Division

RECT BRIDGE 1.5A 200V KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

パッケージ: 4-SIP, KBPM

1.5KE16-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 12.9VWM 23.5VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.9V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 23.5V
• Current - Peak Pulse (10/1000µs): 63.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

TGL41-33-E3/96

Vishay Semiconductor Diodes Division

TVS DIODE 26.8VWM 47.7VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26.8V
• Voltage - Breakdown (Min): 29.7V
• Voltage - Clamping (Max) @ Ipp: 47.7V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

パッケージ: DO-213AB, MELF

1.5KE91AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 77.8VWM 125VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 77.8V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

1N6303AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 171VWM 274VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

SMPC11A-M3/87A

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC SMPC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

パッケージ: TO-277, 3-PowerDFN

SMCJ85A-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 85VWM 137VC DO-214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 10.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

パッケージ: DO-214AB, SMC

SMAJ120A-M3/61

Vishay Semiconductor Diodes Division

TVS DIODE 120VWM 193VC DO-214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 1.6A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

SMCG6.0A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 6VWM 10.3VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 6V
• Voltage - Breakdown (Min): 6.67V
• Voltage - Clamping (Max) @ Ipp: 10.3V
• Current - Peak Pulse (10/1000µs): 145.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

パッケージ: DO-215AB, SMC Gull Wing

1.5KE440A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 376VWM 602VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 376V
• Voltage - Breakdown (Min): 418V
• Voltage - Clamping (Max) @ Ipp: 602V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial