Vishay Semiconductor Diodes Division 製品

BZW03D36-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 1.85W SOD64

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±10%
• Power - Max: 1.85W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 25.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64

パッケージ: SOD-64, Axial

BZD17C200P-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219AB

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

パッケージ: DO-219AB

BZG03C240TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 240V
• Tolerance: -
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 850 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 180V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

パッケージ: DO-214AC, SMA

MMSZ5236B-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZX84B10-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

MMBZ5260C-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 43V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 93 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 33V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

LL4448-13

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 8ns
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 175°C (Max)

パッケージ: DO-213AC, MINI-MELF, SOD-80

UH6PJ-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

FGP50D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A GP20

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: GP20
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AA, DO-27, Axial

60EPU06

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 81ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-2

UF5403-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

UH3BHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: DO-214AB, SMC

EGL34D-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AA (Glass)

RS1PBHM3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 9pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

RMPG06KHE3_A/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: MPG06, Axial

SS24S-E3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

52MT140KB

Vishay Semiconductor Diodes Division

RECT BRIDGE 1400V 55A MTK

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 55A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MTK
• Supplier Device Package: MTK

パッケージ: MTK

1.5KE20HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 16.2VWM 29.1VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16.2V
• Voltage - Breakdown (Min): 18V
• Voltage - Clamping (Max) @ Ipp: 29.1V
• Current - Peak Pulse (10/1000µs): 51.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

1.5KE20A-E3/51

Vishay Semiconductor Diodes Division

TVS DIODE 17.1VWM 27.7VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 54.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

SA170A-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 170VWM 275VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 1.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

TMPG06-13AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 18.2VC 22A MPG06

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11.1V
• Voltage - Breakdown (Min): 12.4V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 22A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

パッケージ: MPG06, Axial

TPSMC39AHE3_B/I

Vishay Semiconductor Diodes Division

TVS DIODE 53.9VC 27.8A DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33.3V
• Voltage - Breakdown (Min): 37.1V
• Voltage - Clamping (Max) @ Ipp: 53.9V
• Current - Peak Pulse (10/1000µs): 27.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

パッケージ: DO-214AB, SMC

1.5SMC22AHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 18.8VWM 30.6VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 49A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

SMCJ26AHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 26VWM 42.1VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.1V
• Current - Peak Pulse (10/1000µs): 35.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

SM6T10AHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 8.55VWM 14.5VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.55V
• Voltage - Breakdown (Min): 9.5V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 41A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SMA5J24CA-E3/61

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 38.9VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 12.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

GSOT36-HG3-08

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 71VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V (Max)
• Voltage - Breakdown (Min): 39V
• Voltage - Clamping (Max) @ Ipp: 71V
• Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
• Power - Peak Pulse: 248W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 52pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

VESD05-02V-G-08

Vishay Semiconductor Diodes Division

TVS DIODE 5VWM 20VC SOD523

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V (Max)
• Voltage - Breakdown (Min): 6.5V
• Voltage - Clamping (Max) @ Ipp: 20V (Typ)
• Current - Peak Pulse (10/1000µs): 6A (8/20µs)
• Power - Peak Pulse: 120W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 55pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

パッケージ: SC-79, SOD-523