Vishay Semiconductor Diodes Division 製品

VS-T90RIA80

Vishay Semiconductor Diodes Division

SCR PHASE CONT 800V 90A D-55

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 90A
• Current - On State (It (RMS)) (Max): 141A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 120mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1780A, 1870A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D-55 T-Module

パッケージ: D-55 T-Module

VLZ22D-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 22.08V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 22.08V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 40µA @ 20.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

パッケージ: SOD-80 Variant

GLL4754-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 39V 1W MELF DO213AB

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

パッケージ: DO-213AB, MELF

MMSZ4702-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 15V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 11.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

MMBZ4622-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.9V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 1650 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

SRP100J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

SRP100D-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

EGP30A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A GP20

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: GP20
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-201AA, DO-27, Axial

1N5624GPHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-201AD, Axial

VSD3913R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 30A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -

パッケージ: DO-203AB, DO-5, Stud

VSSB3L6S-M3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2.6A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2.6A
• Voltage - Forward (Vf) (Max) @ If: 590mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.2mA @ 60V
• Capacitance @ Vr, F: 358pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

1N5817-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

VS-70HFR20

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 70A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

SL02-GS08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1.1A DO219AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1.1A
• Voltage - Forward (Vf) (Max) @ If: 385mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: 125°C (Max)

パッケージ: DO-219AB

S1PB-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

HFA30TA60CSTRL

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 600V 15A D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 15A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VSKDL240-06S10

Vishay Semiconductor Diodes Division

DIODE MODULE 600V 250A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 250A
• Voltage - Forward (Vf) (Max) @ If: 1.57V @ 800A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1µs
• Current - Reverse Leakage @ Vr: 50mA @ 600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?

パッケージ: 3-MAGN-A-PAK?

VS-UFL130FA60

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 130A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 130A
• Voltage - Forward (Vf) (Max) @ If: 1.88V @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 105ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

VS-HFA50PA60CHN3

Vishay Semiconductor Diodes Division

DIODE STANDARD 600V 25A TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 23ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

パッケージ: TO-247-3

VS-20CTH03-N3

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 300V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

SMA6J17AHM3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 26.7VC DO-214AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 26.7V
• Current - Peak Pulse (10/1000µs): 22.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

SMBJ90HE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 90VWM 160VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 90V
• Voltage - Breakdown (Min): 100V
• Voltage - Clamping (Max) @ Ipp: 160V
• Current - Peak Pulse (10/1000µs): 3.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SMCJ48CHE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 48VWM 85.5VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 85.5V
• Current - Peak Pulse (10/1000µs): 17.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

P6KE12CA-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 10.2VWM 16.7VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 35.9A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SMPC9.0A-M3/86A

Vishay Semiconductor Diodes Division

TVS DIODE 9VWM 15.4VC SMPC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 97.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

パッケージ: TO-277, 3-PowerDFN

SMBG17AHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 27.6VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 21.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

パッケージ: DO-215AA, SMB Gull Wing

SMB10J24AHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 38.9VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 25.7A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: DO-214AA, SMB

SMF7V0A-M3-08

Vishay Semiconductor Diodes Division

TVS DIODE 7VWM 12VC DO-219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7V
• Voltage - Breakdown (Min): 7.78V
• Voltage - Clamping (Max) @ Ipp: 12V
• Current - Peak Pulse (10/1000µs): 16.7A
• Power - Peak Pulse: 200W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 843pF @ 1MHz
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: SMF (DO-219AB)

パッケージ: DO-219AB