Vishay Semiconductor Diodes Division 製品

IRKH162/14

Vishay Semiconductor Diodes Division

SCR DBL LOSCR 1400V 160A INTAPAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 160A
• Current - On State (It (RMS)) (Max): 355A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4870A, 5100A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 2)

パッケージ: INT-A-PAK (3 + 2)

VS-VSKL41/06

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 45A ADD-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 600V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

パッケージ: ADD-A-PAK (3 + 4)

GLL4753-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 1W MELF DO213AB

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

パッケージ: DO-213AB, MELF

GDZ10B-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 10V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: SC-76, SOD-323

TZMC3V0-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 3V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

TLZ22D-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 40nA @ 20.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

BZG03C30TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: -
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 22V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

パッケージ: DO-214AC, SMA

GP10-4007E-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

TVR06JHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 600MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 600mA
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

1N5818-E3/1

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO204AL

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 125°C

パッケージ: DO-204AL, DO-41, Axial

VS-90SQ040TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 9A DO204AR

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 9A
• Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AR, Axial

UGF12HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 12A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 30µA @ 500V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-220-2 Full Pack, Isolated Tab

VI20100SHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-262AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

UG1B-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

VS-40HFL100S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 40A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

BYS10-45-E3/TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 1.5A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

パッケージ: DO-214AC, SMA

MBRD650CTTRR

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 50V 3A DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 3A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-32CTQ030STRRPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 490mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.75mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MBRB2090CT-M3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 90V TO263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V20PWM45CHM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 20A 45V SLIMDPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

P6KE91CA-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 77.8VWM 125VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 77.8V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 4.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SMCJ11CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

パッケージ: DO-214AB, SMC

SMBJ36CAHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 58.1VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

TPSMB43AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 59.3VC 10.1A DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36.8V
• Voltage - Breakdown (Min): 40.9V
• Voltage - Clamping (Max) @ Ipp: 59.3V
• Current - Peak Pulse (10/1000µs): 10.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: DO-214AA, SMB

P4SMA22AHE3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 18.8VWM 30.6VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18.8V
• Voltage - Breakdown (Min): 20.9V
• Voltage - Clamping (Max) @ Ipp: 30.6V
• Current - Peak Pulse (10/1000µs): 13.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

GSOT04-G3-18

Vishay Semiconductor Diodes Division

TVS DIODE 4VWM 14.3VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 4V (Max)
• Voltage - Breakdown (Min): 5V
• Voltage - Clamping (Max) @ Ipp: 14.3V
• Current - Peak Pulse (10/1000µs): 30A (8/20µs)
• Power - Peak Pulse: 429W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 310pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

GSOT03-G3-18

Vishay Semiconductor Diodes Division

TVS DIODE 3.3VWM 12.3VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 12.3V
• Current - Peak Pulse (10/1000µs): 30A (8/20µs)
• Power - Peak Pulse: 369W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 420pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

SMBJ17D-M3/H

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 27.2VC DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 19.2V
• Voltage - Clamping (Max) @ Ipp: 27.2V
• Current - Peak Pulse (10/1000µs): 22.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB