Vishay Semiconductor Diodes Division 製品

1N4756A-T

Vishay Semiconductor Diodes Division

DIODE ZENER 1.3W DO41

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 1500 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

パッケージ: DO-204AL, DO-41, Axial

GDZ12B-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: SC-76, SOD-323

TZQ5222B-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 2.5V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 2.5V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

パッケージ: SOD-80 Variant

MMBZ5253C-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 25V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 19V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

DZ23C39-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 39V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 29V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

パッケージ: TO-236-3, SC-59, SOT-23-3

BA779-2-HG3-18

Vishay Semiconductor Diodes Division

DIODE RF PIN 30V 50MA SOT23

• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (Max): 30V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
• Resistance @ If, F: 50 Ohm @ 1.5mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 125°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

RS1KHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

VS-88HF20

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

VS-40HFL10S02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 40A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 125°C

パッケージ: DO-203AB, DO-5, Stud

VS-72HFR10

Vishay Semiconductor Diodes Division

DIODE STD REC ISO LEAD 70A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 180°C

パッケージ: DO-203AB, DO-5, Stud

VS-20ETF08PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 20A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 100µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-220-2

VS-10ETS12STRL-M3

Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A D2PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SS15P3S-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 15A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: 200°C (Max)

パッケージ: TO-277, 3-PowerDFN

S5K-M3/57T

Vishay Semiconductor Diodes Division

DIODE GPP 5A 800V DO-214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

EGL34DHE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AA (Glass)

S2M/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.5A DO214

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 1000V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

ES2F-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: DO-214AA, SMB

SE12DJ-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3.2A TO263AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3.2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: 90pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
• Supplier Device Package: TO-263AC (SMPD)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab) Variant

15CTQ035S

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 35V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VB20200G-E3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 200V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

GBU6J-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 600V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

パッケージ: 4-SIP, GBU

5KP54AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 54VWM 87.1VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 57.4A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

パッケージ: P600, Axial

1N6280AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 20.5VWM 33.2VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20.5V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.2V
• Current - Peak Pulse (10/1000µs): 45.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

パッケージ: DO-201AA, DO-27, Axial

BZW04-40HE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 40.2VWM DO204AL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 6.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

SMCG58CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 58VWM 93VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93V
• Current - Peak Pulse (10/1000µs): 16A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

パッケージ: DO-215AB, SMC Gull Wing

SMCJ51A-E3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 51VWM 82.4VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 51V
• Voltage - Breakdown (Min): 56.7V
• Voltage - Clamping (Max) @ Ipp: 82.4V
• Current - Peak Pulse (10/1000µs): 18.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

パッケージ: DO-214AB, SMC

SMBJ16A-M3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 16VWM 26VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16V
• Voltage - Breakdown (Min): 17.8V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 23.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SMP30A-M3/84A

Vishay Semiconductor Diodes Division

TVS DIODE 30VWM 48.4VC SMP

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 8.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

パッケージ: DO-220AA