Vishay Semiconductor Diodes Division 製品

ZMM5257B-13

Vishay Semiconductor Diodes Division

DIODE ZENER SOD80 MINIMELF

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

パッケージ: DO-213AA

SMZJ3791B-M3/52

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 1.5W DO214AA

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

BZG03C11TR3

Vishay Semiconductor Diodes Division

DIODE ZENER 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: -
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC

パッケージ: DO-214AC, SMA

MMBZ5254C-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 27V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 41 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

TZX2V4B-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 500MW DO35

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 500mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

パッケージ: DO-204AH, DO-35, Axial

VS-8EWS12SPBF

Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1200V 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-8EWS08STRPBF

Vishay Semiconductor Diodes Division

DIODE RECTIFIER 800V 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

SS10PH9HM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 10A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 90V
• Capacitance @ Vr, F: 270pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-277, 3-PowerDFN

8ETL06-1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO262

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

VSKE320-12

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 320A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -

パッケージ: 3-MAGN-A-PAK?

VS-8ETH06HN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-220-2

BYW172F-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 300V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 1µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: SOD-64, Axial

UG4B-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-201AD, Axial

RS2G-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SW 1.5A 400V 150NS DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AA, SMB

S1PDHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

S07D-GS18

Vishay Semiconductor Diodes Division

DIODE STD REC 200V DO219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1800ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-219AB

1N5397-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

RS3J-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 34pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

VS-20CWT10TRR-E3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

88CNQ060A

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 60V D618

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 640µA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: D-61-8
• Supplier Device Package: D-61-8

パッケージ: D-61-8

VS-6CWQ03FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

DF10SA-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1A 1000V 4SMD

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DFS

パッケージ: 4-SMD, Gull Wing

5KP40HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 40VWM 71.4VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 71.4V
• Current - Peak Pulse (10/1000µs): 70A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

パッケージ: P600, Axial

P6KE36CA-E3/1

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SA54CAHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 54VWM 87.1VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 5.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SMB10J33A-M3/52

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC DO-214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 18.8A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB

SMBG36A-M3/52

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 58.1VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 10.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

パッケージ: DO-215AA, SMB Gull Wing

P6KE36CA-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial