Global Power Technologies Group 製品

GPA060A060MN-FD

Global Power Technologies Group

IGBT 600V 120A 347W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 347W
• Switching Energy: 2.66mJ (on), 1.53mJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 45ns/150ns
• Test Condition: 400V, 60A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3

GPI040A060MN-FD

Global Power Technologies Group

IGBT 600V 80A 231W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 231W
• Switching Energy: 1.46mJ (on), 540µJ (off)
• Input Type: Standard
• Gate Charge: 173nC
• Td (on/off) @ 25°C: 35ns/85ns
• Test Condition: 400V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3

GPA015A120MN-ND

Global Power Technologies Group

IGBT 1200V 30A 212W TO3PN

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 212W
• Switching Energy: 1.61mJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 25ns/166ns
• Test Condition: 600V, 15A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 320ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3P-3, SC-65-3

GHIS080A060S-A2

Global Power Technologies Group

IGBT BUCK CHOP 600V 160A SOT227

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 160A
• Power - Max: 380W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
• Current - Collector Cutoff (Max): 2mA
• Input Capacitance (Cies) @ Vce: 5.44nF @ 30V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GP1M012A060H

Global Power Technologies Group

MOSFET N-CH 600V 12A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2308pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 231W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP1M007A090H

Global Power Technologies Group

MOSFET N-CH 900V 7A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP2M010A060H

Global Power Technologies Group

MOSFET N-CH 600V 10A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 198W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP2M005A050HG

Global Power Technologies Group

MOSFET N-CH 500V 4.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP1M012A060FH

Global Power Technologies Group

MOSFET N-CH 600V 12A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2308pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 53W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

GP1M009A090H

Global Power Technologies Group

MOSFET N-CH 900V 9A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2324pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP1M009A020PG

Global Power Technologies Group

MOSFET N-CH 200V 9A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 414pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

GP1M003A050HG

Global Power Technologies Group

MOSFET N-CH 500V 2.5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52.1W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP2M004A060PG

Global Power Technologies Group

MOSFET N-CH 600V 4A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 86.2W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

GHIS030A060B1P2

Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

• Type: IGBT
• Configuration: 3 Phase
• Current: 60A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

パッケージ: Power Module

GP2D010A065A

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 650V
• Capacitance @ Vr, F: 527pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

GP2D050A060B

Global Power Technologies Group

DIODE SCHOTTKY 600V 50A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 50A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 170µA @ 600V
• Capacitance @ Vr, F: 2635pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-2

GP2D010A120C

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 10A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: 635pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2L (DPAK)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2D010A060A

Global Power Technologies Group

SCHOTTKY DIODE 600V 10A TO-220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Capacitance @ Vr, F: 527pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -50°C ~ 175°C

パッケージ: TO-220-2

GP2D006A060C

Global Power Technologies Group

DIODE SCHOTTKY 600V 6A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: 316pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2L (DPAK)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2D005A120A

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 5A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Capacitance @ Vr, F: 317pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-220-2

GP2D060A120U

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 94A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

GP2D024A060U

Global Power Technologies Group

TO-247-3L USING 2 600V/12A DIE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 36A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

パッケージ: TO-247-3

GSXD120A004S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 45V 120A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 120A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD100A012S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 120V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 120V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD080A018S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 180V 80A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 180V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD060A006S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 60V 60A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD050A018S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 180V 50A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io) (per Diode): 50A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 180V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD030A006S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 60V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC