Global Power Technologies Group 製品

GPA040A120L-ND

Global Power Technologies Group

IGBT 1200V 80A 455W TO264

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
• Power - Max: 455W
• Switching Energy: 5.8mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 510nC
• Td (on/off) @ 25°C: 41ns/200ns
• Test Condition: 600V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 220ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264

パッケージ: TO-264-3, TO-264AA

GPA025A120MN-ND

Global Power Technologies Group

IGBT 1200V 50A 312W TO3PN

• IGBT Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 75A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
• Power - Max: 312W
• Switching Energy: 4.15mJ (on), 870µJ (off)
• Input Type: Standard
• Gate Charge: 350nC
• Td (on/off) @ 25°C: 57ns/240ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 480ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3

GPA020A120MN-FD

Global Power Technologies Group

IGBT 1200V 40A 223W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 223W
• Switching Energy: 2.8mJ (on), 480µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 30ns/150ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 425ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3PN

パッケージ: TO-3

GPA020A135MN-FD

Global Power Technologies Group

IGBT 1350V 40A 223W TO3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
• Power - Max: 223W
• Switching Energy: 2.5mJ (on), 760µJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: 25ns/175ns
• Test Condition: 600V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 425ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3
• Supplier Device Package: TO-3P

パッケージ: TO-3

GHIS060A060S-A2

Global Power Technologies Group

IGBT BUCK CHOP 600V 120A SOT227

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Power - Max: 312W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 3.3nF @ 30V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GP2M005A060HG

Global Power Technologies Group

MOSFET N-CH 600V 4.2A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

パッケージ: TO-220-3

GP2M004A065PG

Global Power Technologies Group

MOSFET N-CH 650V 4A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

GP1M023A050N

Global Power Technologies Group

MOSFET N-CH 500V 23A TO3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3391pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 347W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PN
• Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

GP1M011A050FH

Global Power Technologies Group

MOSFET N-CH 500V 11A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 51.4W (Tc)
• Rds On (Max) @ Id, Vgs: 670 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

GP1M003A090C

Global Power Technologies Group

MOSFET N-CH 900V 2.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1.25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2M005A060PG

Global Power Technologies Group

MOSFET N-CH 600V 4.2A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 658pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 98.4W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

GP2M002A060CG

Global Power Technologies Group

MOSFET N-CH 600V 2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 52.1W (Tc)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M020A060N

Global Power Technologies Group

MOSFET N-CH 600V 20A TO3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2097pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 347W (Tc)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PN
• Package / Case: TO-3P-3, SC-65-3

パッケージ: TO-3P-3, SC-65-3

GP1M003A040CG

Global Power Technologies Group

MOSFET N-CH 400V 2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GCMS040A120B1H1

Global Power Technologies Group

SIC MOSFET FULL BRIDGE MODULE B1

• Type: MOSFET
• Configuration: -
• Current: 42A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

パッケージ: Power Module

GHXS050A170S-D3

Global Power Technologies Group

1700V 50A SIC SBD PARALLEL

• Type: -
• Configuration: -
• Current: 150A
• Voltage: 1700V
• Voltage - Isolation: 2500Vrms
• Package / Case: SOT-227-4, miniBLOC

パッケージ: SOT-227-4, miniBLOC

GHIS100A120S2B1

Global Power Technologies Group

SI IGBT & SIC SBD HYBRID MODULES

• Type: IGBT
• Configuration: Half Bridge
• Current: 200A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

パッケージ: Power Module

GDP50P120B

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 50A TO247-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Capacitance @ Vr, F: 2984pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 135°C

パッケージ: TO-247-2

GP2D024A060B

Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 68A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 24A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 80µA @ 600V
• Capacitance @ Vr, F: 1265pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-247-2

GP2D008A120C

Global Power Technologies Group

SCHOTTKY DIODE 1200V 8A TO-252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 24A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 20µA @ 1200V
• Capacitance @ Vr, F: 508pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2L (DPAK)
• Operating Temperature - Junction: -50°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GP2D012A065C

Global Power Technologies Group

DIODE SCHOTTKY 650V 29A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 29A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 650V
• Capacitance @ Vr, F: 632pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

GSXF100A060S1-D3

Global Power Technologies Group

DIODE FAST REC 600V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90ns
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD060A008S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 80V 60A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 80V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXF030A020S1-D3

Global Power Technologies Group

DIODE FAST REC 200V 30A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GHXS050A060S-D3

Global Power Technologies Group

DIODE SCHOTT SBD 600V 50A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GSXD100A004S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 45V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GHXS015A120S-D4

Global Power Technologies Group

DIODE SCHOT SBD 1200V 15A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC

GHXS030A120S-D1

Global Power Technologies Group

MOD SBD BRIDGE 1200V 30A SOT227

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

パッケージ: SOT-227-4, miniBLOC