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BSZ0602LSATMA1

Infineon Technologies

MOSFET N-CH 80V 13A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

80 V

13A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 36µA

18 nC @ 4.5 V

2340 pF @ 40 V

±20V

-

69W (Tc)

7mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPB80P03P4L07ATMA2

Infineon Technologies

MOSFET_(20V 40V) PG-TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫4,536

MOSFET (Metal Oxide)

30 V

80A (Tc)

4.5V, 10V

2V @ 130µA

80 nC @ 10 V

5700 pF @ 25 V

+5V, -16V

-

88W (Tc)

6.9mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IQE046N08LM5CGATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-3
Package / Case: 9-PowerTDFN

パッケージ: -

在庫14,670

MOSFET (Metal Oxide)

80 V

15.6A (Ta), 99A (Tc)

4.5V, 10V

2.3V @ 47µA

38 nC @ 10 V

3250 pF @ 40 V

±20V

-

2.5W (Ta), 100W (Tc)

4.6mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-3

9-PowerTDFN

IPP040N06NF2SAKMA1

Infineon Technologies

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

在庫126

MOSFET (Metal Oxide)

60 V

80A (Tc)

6V, 10V

3.3V @ 50µA

44 nC @ 10 V

3375 pF @ 30 V

±20V

-

3W (Ta), 107W (Tc)

4mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

ISK024NE2LM5AULA1

Infineon Technologies

TRENCH <= 40V PG-VSON-6

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 6-PQFN Dual (2x2)
Package / Case: 6-PowerVDFN

パッケージ: -

在庫23,865

MOSFET (Metal Oxide)

40 V

-

±16V

-

Surface Mount

6-PQFN Dual (2x2)

6-PowerVDFN

IPD50P04P4L11ATMA2

Infineon Technologies

MOSFET P-CH 40V 50A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫17,070

MOSFET (Metal Oxide)

40 V

50A (Tc)

4.5V, 10V

2.2V @ 85µA

59 nC @ 10 V

3900 pF @ 25 V

+5V, -16V

-

58W (Tc)

10.6mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC0805LSATMA1

Infineon Technologies

MOSFET N-CH 100V 79A TDSON-8-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

パッケージ: -

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MOSFET (Metal Oxide)

100 V

79A (Tc)

4.5V, 10V

2.3V @ 49µA

20 nC @ 4.5 V

2700 pF @ 50 V

±20V

-

83W (Tc)

7mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IPDD60R075CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 266W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

パッケージ: -

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MOSFET (Metal Oxide)

600 V

40A (Tc)

-

4.5V @ 570µA

51 nC @ 10 V

2102 pF @ 400 V

±20V

-

266W (Tc)

75mOhm @ 11.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-10-1

10-PowerSOP Module

IPDQ65R040CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

パッケージ: -

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MOSFET (Metal Oxide)

650 V

64A (Tc)

10V

4.5V @ 1.24mA

97 nC @ 10 V

4975 pF @ 400 V

±20V

-

357W (Tc)

40mOhm @ 24.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

64-2144PBF

Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPB011N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫2,199

MOSFET (Metal Oxide)

40 V

43A (Ta), 201A (Tc)

6V, 10V

3.4V @ 249µA

315 nC @ 10 V

15000 pF @ 20 V

±20V

-

3.8W (Ta), 375W (Tc)

1.15mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPA65R660CFDXKSA2

Infineon Technologies

MOSFET N-CH 700V 6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 27.8W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫1,500

MOSFET (Metal Oxide)

700 V

6A (Tc)

10V

4.5V @ 200µA

22 nC @ 10 V

615 pF @ 100 V

±20V

-

27.8W (Tc)

660mOhm @ 2.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IRFP4332PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

250 V

57A (Tc)

10V

5V @ 250µA

150 nC @ 10 V

5860 pF @ 25 V

±30V

-

360W (Tc)

33mOhm @ 35A, 10V

-40°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IMZA65R039M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Vgs (Max): +20V, -2V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-3
Package / Case: TO-247-4

パッケージ: -

在庫306

SiCFET (Silicon Carbide)

650 V

50A (Tc)

18V

5.7V @ 7.5mA

41 nC @ 18 V

1393 pF @ 400 V

+20V, -2V

-

176W (Tc)

50mOhm @ 25A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-3

TO-247-4

IPTC015N10NM5ATMA1

Infineon Technologies

MOSFET N-CH 100V 35A/354A HDSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

パッケージ: -

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MOSFET (Metal Oxide)

100 V

35A (Ta), 354A (Tc)

6V, 10V

3.8V @ 275µA

208 nC @ 10 V

16000 pF @ 50 V

±20V

-

3.8W (Ta), 375W (Tc)

1.5mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

ISP12DP06NMXTSA1

Infineon Technologies

MOSFET P-CH 60V 2.8A SOT223-4

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 520µA
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

パッケージ: -

在庫4,914

MOSFET (Metal Oxide)

60 V

2.8A (Ta)

10V

4V @ 520µA

20.2 nC @ 10 V

790 pF @ 30 V

±20V

-

1.8W (Ta), 4.2W (Tc)

125mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IPD079N06L3GBTMA1

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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MOSFET (Metal Oxide)

60 V

50A (Tc)

4.5V, 10V

2.2V @ 34µA

29 nC @ 4.5 V

4900 pF @ 30 V

±20V

-

79W (Tc)

7.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

98-0193

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPD040N08NF2SATMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫11,061

MOSFET (Metal Oxide)

80 V

20A (Ta), 129A (Tc)

6V, 10V

3.8V @ 85µA

81 nC @ 10 V

3800 pF @ 40 V

±20V

-

3W (Ta), 150W (Tc)

4mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

ISC800P06LMATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 724µA
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

パッケージ: -

在庫13,305

MOSFET (Metal Oxide)

60 V

19.6A (Tc)

4.5V, 10V

2V @ 724µA

14.8 nC @ 10 V

1400 pF @ 30 V

±20V

-

83W (Tc)

80mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPI65R190CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 17.5A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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MOSFET (Metal Oxide)

650 V

17.5A (Tc)

10V

4.5V @ 700µA

68 nC @ 10 V

1850 pF @ 100 V

±20V

-

151W (Tc)

190mOhm @ 7.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3

TO-262-3 Long Leads, I2PAK, TO-262AA

SPI16N50C3

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3-1
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

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MOSFET (Metal Oxide)

500 V

16A (Tc)

10V

3.9V @ 675µA

66 nC @ 10 V

1600 pF @ 25 V

±20V

-

160W (Tc)

280mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO262-3-1

TO-262-3 Long Leads, I2PAK, TO-262AA

BSZ058N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 15A/40A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

30 V

15A (Ta), 40A (Tc)

4.5V, 10V

2.2V @ 250µA

30 nC @ 10 V

2400 pF @ 15 V

±20V

-

2.1W (Ta), 45W (Tc)

5.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

IPD85P04P407ATMA2

Infineon Technologies

MOSFET P-CH 40V 85A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫79,641

MOSFET (Metal Oxide)

40 V

85A (Tc)

-

4V @ 150µA

89 nC @ 10 V

6085 pF @ 25 V

±20V

-

88W (Tc)

7.3mOhm @ 85A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRFR3910

Infineon Technologies

MOSFET N-CH 100V 16A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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MOSFET (Metal Oxide)

100 V

16A (Tc)

-

4V @ 250µA

44 nC @ 10 V

640 pF @ 25 V

-

115mOhm @ 10A, 10V

-

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPD60R360CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 7A TO252-3-313

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫4,608

MOSFET (Metal Oxide)

600 V

7A (Tc)

10V

4.5V @ 140µA

14 nC @ 10 V

679 pF @ 400 V

±20V

-

43W (Tc)

360mOhm @ 2.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPB60R385CPATMA1

Infineon Technologies

MOSFET N-CH 600V 9A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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MOSFET (Metal Oxide)

600 V

9A (Tc)

10V

3.5V @ 340µA

22 nC @ 10 V

790 pF @ 100 V

±20V

-

83W (Tc)

385mOhm @ 5.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AIMZA75R016M1HXKSA1

Infineon Technologies

IGBT

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

Request a Quote

-

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSZ0602LSATMA1	Infineon Technologies	MOSFET N-CH 80V 13A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	80 V	13A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 36µA	18 nC @ 4.5 V	2340 pF @ 40 V	±20V	-	69W (Tc)	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPB80P03P4L07ATMA2	Infineon Technologies	MOSFET_(20V 40V) PG-TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫4,536	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2V @ 130µA	80 nC @ 10 V	5700 pF @ 25 V	+5V, -16V	-	88W (Tc)	6.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IQE046N08LM5CGATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 47µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-3 Package / Case: 9-PowerTDFN	パッケージ: -	在庫14,670	MOSFET (Metal Oxide)	80 V	15.6A (Ta), 99A (Tc)	4.5V, 10V	2.3V @ 47µA	38 nC @ 10 V	3250 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-3	9-PowerTDFN
IPP040N06NF2SAKMA1	Infineon Technologies	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	在庫126	MOSFET (Metal Oxide)	60 V	80A (Tc)	6V, 10V	3.3V @ 50µA	44 nC @ 10 V	3375 pF @ 30 V	±20V	-	3W (Ta), 107W (Tc)	4mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
ISK024NE2LM5AULA1	Infineon Technologies	TRENCH <= 40V PG-VSON-6 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-PQFN Dual (2x2) Package / Case: 6-PowerVDFN	パッケージ: -	在庫23,865	MOSFET (Metal Oxide)	40 V	-	-	-	-	-	±16V	-	-	-	-	Surface Mount	6-PQFN Dual (2x2)	6-PowerVDFN
IPD50P04P4L11ATMA2	Infineon Technologies	MOSFET P-CH 40V 50A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫17,070	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.2V @ 85µA	59 nC @ 10 V	3900 pF @ 25 V	+5V, -16V	-	58W (Tc)	10.6mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC0805LSATMA1	Infineon Technologies	MOSFET N-CH 100V 79A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	100 V	79A (Tc)	4.5V, 10V	2.3V @ 49µA	20 nC @ 4.5 V	2700 pF @ 50 V	±20V	-	83W (Tc)	7mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IPDD60R075CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 40A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 266W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	40A (Tc)	-	4.5V @ 570µA	51 nC @ 10 V	2102 pF @ 400 V	±20V	-	266W (Tc)	75mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
IPDQ65R040CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	64A (Tc)	10V	4.5V @ 1.24mA	97 nC @ 10 V	4975 pF @ 400 V	±20V	-	357W (Tc)	40mOhm @ 24.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
64-2144PBF	Infineon Technologies	MOSFET N-CH 200V 9.3A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB011N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 201A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 249µA Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫2,199	MOSFET (Metal Oxide)	40 V	43A (Ta), 201A (Tc)	6V, 10V	3.4V @ 249µA	315 nC @ 10 V	15000 pF @ 20 V	±20V	-	3.8W (Ta), 375W (Tc)	1.15mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA65R660CFDXKSA2	Infineon Technologies	MOSFET N-CH 700V 6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	パッケージ: -	在庫1,500	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	4.5V @ 200µA	22 nC @ 10 V	615 pF @ 100 V	±20V	-	27.8W (Tc)	660mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IRFP4332PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	250 V	57A (Tc)	10V	5V @ 250µA	150 nC @ 10 V	5860 pF @ 25 V	±30V	-	360W (Tc)	33mOhm @ 35A, 10V	-40°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IMZA65R039M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	パッケージ: -	在庫306	SiCFET (Silicon Carbide)	650 V	50A (Tc)	18V	5.7V @ 7.5mA	41 nC @ 18 V	1393 pF @ 400 V	+20V, -2V	-	176W (Tc)	50mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
IPTC015N10NM5ATMA1	Infineon Technologies	MOSFET N-CH 100V 35A/354A HDSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	100 V	35A (Ta), 354A (Tc)	6V, 10V	3.8V @ 275µA	208 nC @ 10 V	16000 pF @ 50 V	±20V	-	3.8W (Ta), 375W (Tc)	1.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
ISP12DP06NMXTSA1	Infineon Technologies	MOSFET P-CH 60V 2.8A SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	パッケージ: -	在庫4,914	MOSFET (Metal Oxide)	60 V	2.8A (Ta)	10V	4V @ 520µA	20.2 nC @ 10 V	790 pF @ 30 V	±20V	-	1.8W (Ta), 4.2W (Tc)	125mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IPD079N06L3GBTMA1	Infineon Technologies	MOSFET N-CH 60V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2.2V @ 34µA	29 nC @ 4.5 V	4900 pF @ 30 V	±20V	-	79W (Tc)	7.9mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
98-0193	Infineon Technologies	IC MOSFET HS PWR SW 35A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD040N08NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫11,061	MOSFET (Metal Oxide)	80 V	20A (Ta), 129A (Tc)	6V, 10V	3.8V @ 85µA	81 nC @ 10 V	3800 pF @ 40 V	±20V	-	3W (Ta), 150W (Tc)	4mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
ISC800P06LMATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 724µA Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	パッケージ: -	在庫13,305	MOSFET (Metal Oxide)	60 V	19.6A (Tc)	4.5V, 10V	2V @ 724µA	14.8 nC @ 10 V	1400 pF @ 30 V	±20V	-	83W (Tc)	80mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPI65R190CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 17.5A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	17.5A (Tc)	10V	4.5V @ 700µA	68 nC @ 10 V	1850 pF @ 100 V	±20V	-	151W (Tc)	190mOhm @ 7.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2PAK, TO-262AA
SPI16N50C3	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	3.9V @ 675µA	66 nC @ 10 V	1600 pF @ 25 V	±20V	-	160W (Tc)	280mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2PAK, TO-262AA
BSZ058N03LSGATMA1	Infineon Technologies	MOSFET N-CH 30V 15A/40A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta), 40A (Tc)	4.5V, 10V	2.2V @ 250µA	30 nC @ 10 V	2400 pF @ 15 V	±20V	-	2.1W (Ta), 45W (Tc)	5.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
IPD85P04P407ATMA2	Infineon Technologies	MOSFET P-CH 40V 85A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 85A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫79,641	MOSFET (Metal Oxide)	40 V	85A (Tc)	-	4V @ 150µA	89 nC @ 10 V	6085 pF @ 25 V	±20V	-	88W (Tc)	7.3mOhm @ 85A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR3910	Infineon Technologies	MOSFET N-CH 100V 16A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	100 V	16A (Tc)	-	4V @ 250µA	44 nC @ 10 V	640 pF @ 25 V	-	-	-	115mOhm @ 10A, 10V	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R360CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 7A TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫4,608	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	4.5V @ 140µA	14 nC @ 10 V	679 pF @ 400 V	±20V	-	43W (Tc)	360mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB60R385CPATMA1	Infineon Technologies	MOSFET N-CH 600V 9A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	3.5V @ 340µA	22 nC @ 10 V	790 pF @ 100 V	±20V	-	83W (Tc)	385mOhm @ 5.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZA75R016M1HXKSA1	Infineon Technologies	IGBT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-