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IPW90R1K2C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 5.1A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

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MOSFET (Metal Oxide)

900 V

5.1A (Tc)

10V

3.5V @ 310µA

28 nC @ 10 V

710 pF @ 100 V

±20V

-

83W (Tc)

1.2Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

ISC025N08NM5LF2ATMA1

Infineon Technologies

OPTIMOSTM5LINEARFET80V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

80 V

23A (Ta), 198A (Tc)

10V

3.6V @ 115µA

96 nC @ 10 V

6800 pF @ 40 V

±20V

-

3W (Ta), 217W (Tc)

2.55mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPZA60R060P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 48A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

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MOSFET (Metal Oxide)

600 V

48A (Tc)

10V

4V @ 800µA

67 nC @ 10 V

2895 pF @ 400 V

±20V

-

164W (Tc)

60mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

BSZ097N04LSGATMA1

Infineon Technologies

MOSFET N-CH 40V 12A/40A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

パッケージ: -

在庫24,936

MOSFET (Metal Oxide)

40 V

12A (Ta), 40A (Tc)

4.5V, 10V

2V @ 14µA

24 nC @ 10 V

1900 pF @ 20 V

±20V

-

2.1W (Ta), 35W (Tc)

9.7mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

SPP80N06S209

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

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MOSFET (Metal Oxide)

55 V

80A (Tc)

10V

4V @ 125µA

80 nC @ 10 V

3140 pF @ 25 V

±20V

-

190W (Tc)

9.1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPA65R150CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

パッケージ: -

在庫1,497

MOSFET (Metal Oxide)

650 V

22.4A (Tc)

10V

4.5V @ 900µA

86 nC @ 10 V

2340 pF @ 100 V

±20V

-

34.7W (Tc)

150mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPP055N08NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

在庫1,089

MOSFET (Metal Oxide)

80 V

18.5A (Ta), 99A (Tc)

6V, 10V

3.8V @ 55µA

54 nC @ 10 V

2500 pF @ 40 V

±20V

-

3.8W (Ta), 107W (Tc)

5.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMBG65R009M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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-

IPL65R065CFD7AUMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

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MOSFET (Metal Oxide)

650 V

33A (Tc)

10V

4.5V @ 860µA

68 nC @ 10 V

3288 pF @ 400 V

±20V

-

195W (Tc)

65mOhm @ 16.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

BSZ018NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 22A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

パッケージ: -

在庫74,508

MOSFET (Metal Oxide)

25 V

22A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

36 nC @ 10 V

2500 pF @ 12 V

±20V

-

2.1W (Ta), 69W (Tc)

1.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

SPW16N50C3FKSA1

Infineon Technologies

MOSFET N-CH 560V 16A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

パッケージ: -

在庫558

MOSFET (Metal Oxide)

560 V

16A (Tc)

10V

3.9V @ 675µA

66 nC @ 10 V

1600 pF @ 25 V

±20V

-

160W (Tc)

280mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPTG007N06NM5ATMA1

Infineon Technologies

MOSFET N-CH 60V 53A/454A HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

パッケージ: -

在庫10,728

MOSFET (Metal Oxide)

60 V

53A (Ta), 454A (Tc)

6V, 10V

3.3V @ 280µA

261 nC @ 10 V

21000 pF @ 30 V

±20V

-

3.8W (Ta), 375W (Tc)

0.75mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

IRF7601TR

Infineon Technologies

MOSFET N-CH 20V 5.7A MICRO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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MOSFET (Metal Oxide)

20 V

5.7A (Ta)

-

700mV @ 250µA (Min)

22 nC @ 4.5 V

650 pF @ 15 V

-

35mOhm @ 3.8A, 4.5V

-

Surface Mount

Micro8™

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AIMZH120R020M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

パッケージ: -

在庫720

SiC (Silicon Carbide Junction Transistor)

1200 V

100A (Tc)

18V, 20V

5.1V @ 13.7mA

82 nC @ 20 V

2667 pF @ 800 V

+23V, -5V

-

429W (Tc)

25mOhm @ 43A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-11

TO-247-4

IQDH29NE2LM5ATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-U04
Package / Case: 8-PowerTDFN

パッケージ: -

在庫14,859

MOSFET (Metal Oxide)

25 V

75A (Ta), 789A (Tc)

4.5V, 10V

2V @ 1.448mA

254 nC @ 10 V

17000 pF @ 12 V

±16V

-

2.5W (Ta), 278W (Tc)

0.29mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-U04

8-PowerTDFN

IRF7603TR

Infineon Technologies

MOSFET N-CH 30V 5.6A MICRO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.7A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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MOSFET (Metal Oxide)

30 V

5.6A (Ta)

-

1V @ 250µA

27 nC @ 10 V

520 pF @ 25 V

-

35mOhm @ 3.7A, 10V

-

Surface Mount

Micro8™

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRF7604TR

Infineon Technologies

MOSFET P-CH 20V 3.6A MICRO8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro8™
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

パッケージ: -

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MOSFET (Metal Oxide)

20 V

3.6A (Ta)

-

700mV @ 250µA (Min)

20 nC @ 4.5 V

590 pF @ 15 V

-

90mOhm @ 2.4A, 4.5V

-

Surface Mount

Micro8™

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IPD60R600P7SE8228AUMA1

Infineon Technologies

MOSFET N-CH 600V 6A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫7,413

MOSFET (Metal Oxide)

600 V

6A (Tc)

10V

4V @ 80µA

9 nC @ 10 V

363 pF @ 400 V

±20V

-

30W (Tc)

600mOhm @ 1.7A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IST007N04NM6AUMA1

Infineon Technologies

MOSFET N-CH 40V 54A/440A HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

パッケージ: -

在庫4,275

MOSFET (Metal Oxide)

40 V

54A (Ta), 440A (Tc)

6V, 10V

3.3V @ 250µA

152 nC @ 10 V

7900 pF @ 20 V

±20V

-

3.8W (Ta), 250W (Tc)

0.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

IPB049NE7N3GATMA1

Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫5,700

MOSFET (Metal Oxide)

75 V

80A (Tc)

10V

3.8V @ 91µA

68 nC @ 10 V

4750 pF @ 37.5 V

±20V

-

150W (Tc)

4.9mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AUIRLU3114Z-701TRL

Infineon Technologies

AUIRLU3114Z - 20V-40V N-CHANNEL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: -

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MOSFET (Metal Oxide)

40 V

42A (Tc)

4.5V, 10V

2.5V @ 100µA

56 nC @ 4.5 V

3810 pF @ 25 V

±16V

-

140W (Tc)

4.9mOhm @ 42A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IPSA70R900P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 6A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: -

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MOSFET (Metal Oxide)

700 V

6A (Tc)

10V

3.5V @ 60µA

6.8 nC @ 400 V

211 pF @ 400 V

±16V

-

30.5W (Tc)

900mOhm @ 1.1A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

IMZA75R040M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

パッケージ: -

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-

Through Hole

PG-TO247-4

TO-247-4

BSC010NE2LSATMA1

Infineon Technologies

MOSFET N-CH 25V 39A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

パッケージ: -

在庫57,087

MOSFET (Metal Oxide)

25 V

39A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

64 nC @ 10 V

4700 pF @ 12 V

±20V

-

2.5W (Ta), 96W (Tc)

1mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IPLK80R2K0P7ATMA1

Infineon Technologies

MOSFET 800V TDSON-8

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

パッケージ: -

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MOSFET (Metal Oxide)

800 V

-

±20V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPDQ60R055CFD7XTMA1

Infineon Technologies

HIGH POWER_NEW PG-HDSOP-22

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

パッケージ: -

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MOSFET (Metal Oxide)

600 V

-

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

IRFP4127PBFAKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

パッケージ: -

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MOSFET (Metal Oxide)

200 V

75A (Tc)

10V

5V @ 250µA

150 nC @ 10 V

5380 pF @ 50 V

±20V

-

341W (Tc)

21mOhm @ 44A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IAUC100N10S5N040ATMA1

Infineon Technologies

MOSFET N-CH 100V 100A 8TDSON-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

パッケージ: -

在庫34,938

MOSFET (Metal Oxide)

100 V

100A (Tc)

6V, 10V

3.8V @ 90µA

78 nC @ 10 V

5200 pF @ 50 V

±20V

-

167W (Tc)

4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

部品番号	メーカ	説明	パッケージ	在庫	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPW90R1K2C3FKSA1	Infineon Technologies	MOSFET N-CH 900V 5.1A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	28 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
ISC025N08NM5LF2ATMA1	Infineon Technologies	OPTIMOSTM5LINEARFET80V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 217W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	80 V	23A (Ta), 198A (Tc)	10V	3.6V @ 115µA	96 nC @ 10 V	6800 pF @ 40 V	±20V	-	3W (Ta), 217W (Tc)	2.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPZA60R060P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 48A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	4V @ 800µA	67 nC @ 10 V	2895 pF @ 400 V	±20V	-	164W (Tc)	60mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
BSZ097N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 12A/40A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	パッケージ: -	在庫24,936	MOSFET (Metal Oxide)	40 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 14µA	24 nC @ 10 V	1900 pF @ 20 V	±20V	-	2.1W (Ta), 35W (Tc)	9.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SPP80N06S209	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4V @ 125µA	80 nC @ 10 V	3140 pF @ 25 V	±20V	-	190W (Tc)	9.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA65R150CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 22.4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	パッケージ: -	在庫1,497	MOSFET (Metal Oxide)	650 V	22.4A (Tc)	10V	4.5V @ 900µA	86 nC @ 10 V	2340 pF @ 100 V	±20V	-	34.7W (Tc)	150mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP055N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	在庫1,089	MOSFET (Metal Oxide)	80 V	18.5A (Ta), 99A (Tc)	6V, 10V	3.8V @ 55µA	54 nC @ 10 V	2500 pF @ 40 V	±20V	-	3.8W (Ta), 107W (Tc)	5.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMBG65R009M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL65R065CFD7AUMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 860µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	4.5V @ 860µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	195W (Tc)	65mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
BSZ018NE2LSIATMA1	Infineon Technologies	MOSFET N-CH 25V 22A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	パッケージ: -	在庫74,508	MOSFET (Metal Oxide)	25 V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	36 nC @ 10 V	2500 pF @ 12 V	±20V	-	2.1W (Ta), 69W (Tc)	1.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
SPW16N50C3FKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	パッケージ: -	在庫558	MOSFET (Metal Oxide)	560 V	16A (Tc)	10V	3.9V @ 675µA	66 nC @ 10 V	1600 pF @ 25 V	±20V	-	160W (Tc)	280mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPTG007N06NM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 53A/454A HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	パッケージ: -	在庫10,728	MOSFET (Metal Oxide)	60 V	53A (Ta), 454A (Tc)	6V, 10V	3.3V @ 280µA	261 nC @ 10 V	21000 pF @ 30 V	±20V	-	3.8W (Ta), 375W (Tc)	0.75mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing
IRF7601TR	Infineon Technologies	MOSFET N-CH 20V 5.7A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro8™ Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5.7A (Ta)	-	700mV @ 250µA (Min)	22 nC @ 4.5 V	650 pF @ 15 V	-	-	-	35mOhm @ 3.8A, 4.5V	-	Surface Mount	Micro8™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
AIMZH120R020M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	パッケージ: -	在庫720	SiC (Silicon Carbide Junction Transistor)	1200 V	100A (Tc)	18V, 20V	5.1V @ 13.7mA	82 nC @ 20 V	2667 pF @ 800 V	+23V, -5V	-	429W (Tc)	25mOhm @ 43A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-11	TO-247-4
IQDH29NE2LM5ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1.448mA Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	パッケージ: -	在庫14,859	MOSFET (Metal Oxide)	25 V	75A (Ta), 789A (Tc)	4.5V, 10V	2V @ 1.448mA	254 nC @ 10 V	17000 pF @ 12 V	±16V	-	2.5W (Ta), 278W (Tc)	0.29mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN
IRF7603TR	Infineon Technologies	MOSFET N-CH 30V 5.6A MICRO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 35mOhm @ 3.7A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro8™ Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.6A (Ta)	-	1V @ 250µA	27 nC @ 10 V	520 pF @ 25 V	-	-	-	35mOhm @ 3.7A, 10V	-	Surface Mount	Micro8™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF7604TR	Infineon Technologies	MOSFET P-CH 20V 3.6A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro8™ Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.6A (Ta)	-	700mV @ 250µA (Min)	20 nC @ 4.5 V	590 pF @ 15 V	-	-	-	90mOhm @ 2.4A, 4.5V	-	Surface Mount	Micro8™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IPD60R600P7SE8228AUMA1	Infineon Technologies	MOSFET N-CH 600V 6A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫7,413	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	4V @ 80µA	9 nC @ 10 V	363 pF @ 400 V	±20V	-	30W (Tc)	600mOhm @ 1.7A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IST007N04NM6AUMA1	Infineon Technologies	MOSFET N-CH 40V 54A/440A HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 440A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	パッケージ: -	在庫4,275	MOSFET (Metal Oxide)	40 V	54A (Ta), 440A (Tc)	6V, 10V	3.3V @ 250µA	152 nC @ 10 V	7900 pF @ 20 V	±20V	-	3.8W (Ta), 250W (Tc)	0.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
IPB049NE7N3GATMA1	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫5,700	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	3.8V @ 91µA	68 nC @ 10 V	4750 pF @ 37.5 V	±20V	-	150W (Tc)	4.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AUIRLU3114Z-701TRL	Infineon Technologies	AUIRLU3114Z - 20V-40V N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	40 V	42A (Tc)	4.5V, 10V	2.5V @ 100µA	56 nC @ 4.5 V	3810 pF @ 25 V	±16V	-	140W (Tc)	4.9mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IPSA70R900P7SAKMA1	Infineon Technologies	MOSFET N-CH 700V 6A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	3.5V @ 60µA	6.8 nC @ 400 V	211 pF @ 400 V	±16V	-	30.5W (Tc)	900mOhm @ 1.1A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
IMZA75R040M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
BSC010NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 39A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	パッケージ: -	在庫57,087	MOSFET (Metal Oxide)	25 V	39A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	64 nC @ 10 V	4700 pF @ 12 V	±20V	-	2.5W (Ta), 96W (Tc)	1mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPLK80R2K0P7ATMA1	Infineon Technologies	MOSFET 800V TDSON-8 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	800 V	-	-	-	-	-	±20V	-	-	-	-	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPDQ60R055CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW PG-HDSOP-22 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
IRFP4127PBFAKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 44A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	パッケージ: -	Request a Quote	MOSFET (Metal Oxide)	200 V	75A (Tc)	10V	5V @ 250µA	150 nC @ 10 V	5380 pF @ 50 V	±20V	-	341W (Tc)	21mOhm @ 44A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IAUC100N10S5N040ATMA1	Infineon Technologies	MOSFET N-CH 100V 100A 8TDSON-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	パッケージ: -	在庫34,938	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	3.8V @ 90µA	78 nC @ 10 V	5200 pF @ 50 V	±20V	-	167W (Tc)	4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN