Infineon Technologies 製品

AUIRLR2905

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ48VSTRLPBF

Infineon Technologies

MOSFET N-CH 60V 72A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1985pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPU02N60S5BKMA1

Infineon Technologies

MOSFET N-CH 600V 1.8A TO-251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

IRFR9024NTRPBF

Infineon Technologies

MOSFET P-CH 55V 11A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE7368EXUMA2

Infineon Technologies

IC PS SYSTEM MULTI VOLT 36PDSO

• Applications: Power Supply, Automotive Applications
• Voltage - Input: 4.5 V ~ 45 V
• Number of Outputs: 3
• Voltage - Output: 5V, 3.3V/2.6V, 1.5V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

パッケージ: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad

TLE8080EMXUMA1

Infineon Technologies

ENGINECONTR

• Applications: Small Engine
• Current - Supply: -
• Voltage - Supply: 6 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-24

パッケージ: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad

IRS26320C

Infineon Technologies

IC MOSFET DRIVER

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IRS2106PBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

IR3555MTRPBF

Infineon Technologies

IC DRIVER GATE 60A PQFN

• Output Configuration: -
• Applications: Synchronous Buck Converters, Voltage Regulators
• Interface: PWM
• Load Type: Inductive
• Technology: -
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 7 V
• Voltage - Load: 4.5 V ~ 15 V
• Operating Temperature: -
• Features: Diode Emulation, Status Flag
• Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
• Mounting Type: Surface Mount
• Package / Case: 30-PowerVFQFN
• Supplier Device Package: 30-PQFN (6x6)

パッケージ: 30-PowerVFQFN

SAA-XC886LM-6FFA 5V AC

Infineon Technologies

IC MCU 8BIT 24KB FLASH 48TQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 24KB (24K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1.75K x 8
• Voltage - Supply (Vcc/Vdd): 2.3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 140°C (TA)
• Mounting Type: -
• Package / Case: 48-TQFP
• Supplier Device Package: 48-TQFP (7x7)

パッケージ: 48-TQFP

C161CSLFCABXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 128TQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 93
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 10K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (20x20)

パッケージ: 128-LQFP

TC1791N384F200EPABKXUMA1

Infineon Technologies

IC MCU 32BIT 3MB FLASH 292LFBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 128
• Program Memory Size: 3MB (3M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 192K x 8
• RAM Size: 288K x 8
• Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
• Data Converters: A/D 8x10b, 44x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: PG-LFBGA-292

パッケージ: -

TC1782N320F180HRBAKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 176LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 180MHz
• Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 86
• Program Memory Size: 2.5MB (2.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 176K x 8
• Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
• Data Converters: A/D 8x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: PG-LQFP-176-20

パッケージ: 176-LQFP

TLE4998P3CE1200HAMA1

Infineon Technologies

SENSOR LINEAR PWM SSO3

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: PWM
• Sensing Range: ±50mT, ±100mT, ±200mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 5mA
• Resolution: 12 b
• Bandwidth: Programmable
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Selectable Scale, Temperature Compensated
• Package / Case: 3-SIP, SSO-3-10
• Supplier Device Package: SSO-3

パッケージ: 3-SIP, SSO-3-10

TDA5211XUMA1

Infineon Technologies

IC FSK/ASK RECEIVER P-TSSOP-28

• Frequency: 310MHz ~ 350MHz
• Sensitivity: -113dBm
• Data Rate (Max): 100kbps
• Modulation or Protocol: ASK, FSK
• Applications: Alarm Systems, Communication Systems
• Current - Receiving: 7.5mA
• Data Interface: PCB, Surface Mount
• Memory Size: -
• Antenna Connector: PCB, Surface Mount
• Features: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28

パッケージ: 28-TSSOP (0.173", 4.40mm Width)

PVA3354NPBF

Infineon Technologies

IC RELAY PHOTOVO 300V 150MA 8DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 24 Ohm
• Load Current: 150mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 300 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
• Supplier Device Package: 8-DIP Modified
• Relay Type: Relay

パッケージ: 8-DIP (0.300", 7.62mm), 4 Leads

DDB6U134N16RRBPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-211

• IGBT Type: -
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 70 A
• Power - Max: 500 W
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 70A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

パッケージ: -

IRF7416QTRPBF

Infineon Technologies

MOSFET P-CH 30V 10A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

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CY8C4124LQA-S423T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

パッケージ: -

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P770048CF0C000

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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F475R12KS4BOSA1

Infineon Technologies

IGBT MOD 1200V 100A 500W

• IGBT Type: -
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 500 W
• Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

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IDWD120E65E7XKSA1

Infineon Technologies

INDUSTRY 14

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 120 A
• Speed: Fast Recovery =< 500ns, > 5A (Io)
• Reverse Recovery Time (trr): 98 ns
• Current - Reverse Leakage @ Vr: 20 µA @ 650 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: PG-TO247-2-2
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

SIDC07D60E6X1SA3

Infineon Technologies

DIODE GEN PURP 600V 15A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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S25FL064LABNFM040

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 8USON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: 8-USON (4x4)

パッケージ: -

S6J335EKSCSE2000A

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
• Peripherals: DMA, LVD, LVR, POR, PWM, WDT
• Number of I/O: 208
• Program Memory Size: 4.16MB (4.16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 112K x 8
• RAM Size: 544K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-LQFP Exposed Pad
• Supplier Device Package: 208-TEQFP (28x28)

パッケージ: -

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IGB20N60H3ATMA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 80 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170 W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

パッケージ: -

TT162N14KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 260A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 162 A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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CYT2B73BADQ0AZEGST

Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 1.0625MB (1.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 45x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

パッケージ: -

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