Infineon Technologies 製品

IRLR7811WCPBF

Infineon Technologies

MOSFET N-CH 30V 64A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7807ZPBF

Infineon Technologies

HEX/MOS N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IRF3709ZCSTRL

Infineon Technologies

MOSFET N-CH 30V 87A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSS123E6327

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

IRF7403TRPBF

Infineon Technologies

MOSFET N-CH 30V 8.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IPP200N15N3GXKSA1

Infineon Technologies

MOSFET N-CH 150V 50A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRF3415PBF

Infineon Technologies

MOSFET N-CH 150V 43A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

IRSF3021LTR

Infineon Technologies

IC DRIVER LO SIDE 50V 3A SOT-223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 155 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

IRSF3021L

Infineon Technologies

IC DRIVER LO SIDE 50V 3A SOT-223

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 155 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

BTS40K21EJCXUMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 36 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 200 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-43-EP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

PEF 22628 E V1.2-G

Infineon Technologies

IC SOC SHDSL DUAL-CH 324-LBGA

• Function: EFM-(Ethernet First Mile) Symmetrical DSL Transceiver
• Interface: HDLC, Parallel, Serial
• Number of Circuits: 2
• Voltage - Supply: 1.5V, 3.3V
• Current - Supply: -
• Power (Watts): 650mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 324-LBGA
• Supplier Device Package: PG-LBGA-324-2

パッケージ: 324-LBGA

TLE6286G

Infineon Technologies

IC TXRX LIN VREG WATCHDOG PDSO16

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: 600mV
• Data Rate: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: P-DSO-16

パッケージ: 16-SOIC (0.154", 3.90mm Width)

XMC4800F100K2048AAXQMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 75
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 352K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 24x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-25

パッケージ: 100-LQFP Exposed Pad

BGSA133GN10E6327XTSA1

Infineon Technologies

IC RF ANT DEVICE 10TSNP

• Function: -
• Frequency: -
• RF Type: -
• Secondary Attributes: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IR35215MTRPBF

Infineon Technologies

IC CONTROLLER 40QFN

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

C164CL6RMCAKXUMA1

Infineon Technologies

IC MCU 32BIT 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

BUZ111SL-E3045A

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50 V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 300W
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

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FS660R08A6P2FBBPSA1

Infineon Technologies

HYBRID PACK DRIVE

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 750 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: 1053 W
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-HYBRIDD-1

パッケージ: -

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BSZ0910LSATMA1

Infineon Technologies

MOSFET N-CH 30V 18A/40A TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

パッケージ: -

IPB019N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 194µA
• Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

TLE7368EXUMA5

Infineon Technologies

OPTIREG PMIC

• Applications: Power Supply, Automotive Applications
• Voltage - Input: 4.5V ~ 45V
• Number of Outputs: 3
• Voltage - Output: 5V, 3.3V/2.6V, 1.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

パッケージ: -

D2650N24TVFXPSA1

Infineon Technologies

DIODE GEN PURP 2.4KV 2650A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2400 V
• Current - Average Rectified (Io): 2650A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

パッケージ: -

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PBL38620-2SOT

Infineon Technologies

FLEXISLIC SLIC

• Function: Subscriber Line Interface Circuit
• Interface: 2-Wire
• Number of Circuits: 1
• Voltage - Supply: 4.75V ~ 5.25V
• Current - Supply: 2.8mA
• Power (Watts): 290 mW
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-24-8

パッケージ: -

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FD300R12KE3HOSA1

Infineon Technologies

IGBT MOD 1200V 480A 1470W

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 480 A
• Power - Max: 1470 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

TT500N18KOFXPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 500 A
• Current - On State (It (RMS)) (Max): 900 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

パッケージ: -

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PEB4166TV1-1

Infineon Technologies

MUSLIC MULTICHANNEL SUBSCRIBER L

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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SIDC03D60C8F1SA1

Infineon Technologies

DIODE GEN PURP 600V 10A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

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CY8C4147AZS-S255

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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