ページ 346 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRFH5204TRPBF	Infineon Technologies	MOSFET N-CH 40V 22A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 105W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	パッケージ: 8-VQFN Exposed Pad	在庫6,336
IRF7759L2TR1PBF	Infineon Technologies	MOSFET N-CH 75V 375A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET L8 Package / Case: DirectFET? Isometric L8	パッケージ: DirectFET? Isometric L8	在庫5,392
BSP88L6327HTSA1	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	パッケージ: TO-261-4, TO-261AA	在庫5,008
IRFZ44E	Infineon Technologies	MOSFET N-CH 60V 48A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫3,584
AUIRLS4030-7TRL	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	パッケージ: TO-263-7, D2Pak (6 Leads + Tab)	在庫2,064
AUIRF3805	Infineon Technologies	MOSFET N-CH 55V 160A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫5,600
IPI60R199CPXKSA2	Infineon Technologies	HIGH POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	在庫3,248
PTFB211803FLV2R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: LDMOS Frequency: 2.17GHz Gain: 17.5dB Voltage - Test: 30V Current Rating: - Noise Figure: - Current - Test: 1.3A Power - Output: 40W Voltage - Rated: 65V Package / Case: H-34288-4/2 Supplier Device Package: H-34288-4/2	パッケージ: H-34288-4/2	在庫2,544
BDP948H6327XTSA1	Infineon Technologies	TRANS PNP 45V 3A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	パッケージ: TO-261-4, TO-261AA	在庫7,616
IR2235JPBF	Infineon Technologies	IC DRIVER BRIDGE 3PHASE 44PLCC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 90ns, 40ns Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead), 32 Leads Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)	パッケージ: 44-LCC (J-Lead), 32 Leads	在庫16,152
SAF-XC866L-4FRI BE	Infineon Technologies	IC MCU 8BIT 16KB FLASH 38TSSOP Core Processor: XC800 Core Size: 8-Bit Speed: 86MHz Connectivity: LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 19 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 768 x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: 38-TSSOP	パッケージ: 38-TFSOP (0.173", 4.40mm Width)	在庫3,040
XMC1302T038X0128AAXUMA1	Infineon Technologies	IC MCU 32BIT 128KB FLASH 38TSSOP Core Processor: ARM? Cortex?-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: I2C, LIN, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Number of I/O: 26 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 16x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-38-9	パッケージ: 38-TFSOP (0.173", 4.40mm Width)	在庫4,912
XE167F96F80LACFXUMA1	Infineon Technologies	IC MCU 16BIT 768KB FLASH 144LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 118 Program Memory Size: 768KB (768K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 82K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 24x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 144-LQFP Exposed Pad Supplier Device Package: 144-LQFP (20x20)	パッケージ: 144-LQFP Exposed Pad	在庫13,500
SLE 66C321PE MFC5.6	Infineon Technologies	IC SECURITY CTRLR 8/16BIT MFC5.6 Applications: Security Core Processor: - Program Memory Type: - Controller Series: - RAM Size: - Interface: - Number of I/O: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: MFC5.6 Chip Card Module Supplier Device Package: -	パッケージ: MFC5.6 Chip Card Module	在庫6,144
TLE5012BE5020XUMA1	Infineon Technologies	SPEED SENSORS 8DSO Function: - Technology: - Polarization: - Sensing Range: - Test Condition: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Output Type: - Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,006
BTS500151TADATMA2	Infineon Technologies	IC SWITCH SMART HISIDE TO263 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 8 V ~ 18 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 33A Rds On (Typ): - Input Type: Non-Inverting Features: - Fault Protection: Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: TO-263-7	パッケージ: TO-263-7, D²Pak (6 Leads + Tab)	在庫19,572
IFX25001MEV25HTSA1	Infineon Technologies	IC REG LIN 2.5V 400MA SOT223-4 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 2V @ 300mA Current - Output: 400mA Current - Quiescent (Iq): 220µA Current - Supply (Max): 30mA PSRR: 60dB (100Hz) Control Features: - Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	パッケージ: TO-261-4, TO-261AA	在庫2,752
C164SL8RMCAKXUMA1	Infineon Technologies	IC MCU 80MQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫2,416
2EDL8024GXUMA1	Infineon Technologies	INT. POWERSTAGE/DRIVER Driven Configuration: High-Side and Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 8V ~ 17V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 90 V Rise / Fall Time (Typ): 45ns, 45ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: PG-VDSON-8-4	パッケージ: -	在庫15,723
S27KL0643DPBHI023	Infineon Technologies	IC PSRAM 64MBIT SPI/OCTAL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 36ns Access Time: 36 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	Request a Quote
BTS54220LBAXUMA1	Infineon Technologies	BTS54220-LBA - SPOC+ SPI POWER C Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: SPI Voltage - Load: 5.5V ~ 28V Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Current - Output (Max): - Rds On (Typ): 9mOhm, 27mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 24-PowerTDFN Supplier Device Package: PG-TSON-24-3	パッケージ: -	Request a Quote
IPN60R2K0PFD7SATMA1	Infineon Technologies	MOSFET N-CH 600V 3A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-3-1 Package / Case: TO-261-3	パッケージ: -	在庫46,305
CY8C4128AXI-S455	Infineon Technologies	IC MCU 32BIT 256KB FLASH 64TQFP Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Single-Core Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	パッケージ: -	Request a Quote
S6J32JEKSNSE20000	Infineon Technologies	IC MCU 32B 4.171875MB FL 208QFP Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 120 Program Memory Size: 4.171875MB (4.171875M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 2.125M x 8 Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V Data Converters: A/D 46x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 208-LQFP Exposed Pad Supplier Device Package: 208-TEQFP (28x28)	パッケージ: -	Request a Quote
CY9AFA42LAPMC-G-JNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 51 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 12x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (12x12)	パッケージ: -	Request a Quote
2EDN7533RXTMA1	Infineon Technologies	DRIVER IC PG-TSSOP-8 Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 20V Logic Voltage - VIL, VIH: 1.4V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8.6ns, 6ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: PG-TSSOP-8	パッケージ: -	在庫14,928
IPP60R170CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 14A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	パッケージ: -	在庫1,272
TDA38812XUMA1	Infineon Technologies	IFX POL Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 5.5V Current - Output: 12A Frequency - Switching: 600kHz, 800kHz, 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 21-PowerUFQFN Supplier Device Package: PG-TSNP-21-1	パッケージ: -	在庫8,655

IRFH5204TRPBF

Infineon Technologies

MOSFET N-CH 40V 22A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-VQFN Exposed Pad

パッケージ: 8-VQFN Exposed Pad

在庫6,336

IRF7759L2TR1PBF

Infineon Technologies

MOSFET N-CH 75V 375A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12222pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 96A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET L8
Package / Case: DirectFET? Isometric L8

パッケージ: DirectFET? Isometric L8

在庫5,392

BSP88L6327HTSA1

Infineon Technologies

MOSFET N-CH 240V 350MA SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

パッケージ: TO-261-4, TO-261AA

在庫5,008

IRFZ44E

Infineon Technologies

MOSFET N-CH 60V 48A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫3,584

AUIRLS4030-7TRL

Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 370W (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

パッケージ: TO-263-7, D2Pak (6 Leads + Tab)

在庫2,064

AUIRF3805

Infineon Technologies

MOSFET N-CH 55V 160A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫5,600

IPI60R199CPXKSA2

Infineon Technologies

HIGH POWER_LEGACY

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

在庫3,248

PTFB211803FLV2R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 17.5dB
Voltage - Test: 30V
Current Rating: -
Noise Figure: -
Current - Test: 1.3A
Power - Output: 40W
Voltage - Rated: 65V
Package / Case: H-34288-4/2
Supplier Device Package: H-34288-4/2

パッケージ: H-34288-4/2

在庫2,544

BDP948H6327XTSA1

Infineon Technologies

TRANS PNP 45V 3A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

在庫7,616

IR2235JPBF

Infineon Technologies

IC DRIVER BRIDGE 3PHASE 44PLCC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 90ns, 40ns
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

パッケージ: 44-LCC (J-Lead), 32 Leads

在庫16,152

SAF-XC866L-4FRI BE

Infineon Technologies

IC MCU 8BIT 16KB FLASH 38TSSOP

Core Processor: XC800
Core Size: 8-Bit
Speed: 86MHz
Connectivity: LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 19
Program Memory Size: 16KB (16K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 768 x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: 38-TSSOP

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

在庫3,040

XMC1302T038X0128AAXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 38TSSOP

Core Processor: ARM? Cortex?-M0
Core Size: 32-Bit
Speed: 32MHz
Connectivity: I2C, LIN, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Number of I/O: 26
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 16x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: PG-TSSOP-38-9

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

在庫4,912

XE167F96F80LACFXUMA1

Infineon Technologies

IC MCU 16BIT 768KB FLASH 144LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 118
Program Memory Size: 768KB (768K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 82K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 24x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: 144-LQFP (20x20)

パッケージ: 144-LQFP Exposed Pad

在庫13,500

SLE 66C321PE MFC5.6

Infineon Technologies

IC SECURITY CTRLR 8/16BIT MFC5.6

Applications: Security
Core Processor: -
Program Memory Type: -
Controller Series: -
RAM Size: -
Interface: -
Number of I/O: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: MFC5.6 Chip Card Module
Supplier Device Package: -

パッケージ: MFC5.6 Chip Card Module

在庫6,144

TLE5012BE5020XUMA1

Infineon Technologies

SPEED SENSORS 8DSO

Function: -
Technology: -
Polarization: -
Sensing Range: -
Test Condition: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Output Type: -
Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,006

BTS500151TADATMA2

Infineon Technologies

IC SWITCH SMART HISIDE TO263

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 8 V ~ 18 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Rds On (Typ): -
Input Type: Non-Inverting
Features: -
Fault Protection: Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7

パッケージ: TO-263-7, D²Pak (6 Leads + Tab)

在庫19,572

IFX25001MEV25HTSA1

Infineon Technologies

IC REG LIN 2.5V 400MA SOT223-4

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 2V @ 300mA
Current - Output: 400mA
Current - Quiescent (Iq): 220µA
Current - Supply (Max): 30mA
PSRR: 60dB (100Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

在庫2,752

C164SL8RMCAKXUMA1

Infineon Technologies

IC MCU 80MQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫2,416

2EDL8024GXUMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER

Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8V ~ 17V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Rise / Fall Time (Typ): 45ns, 45ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: PG-VDSON-8-4

パッケージ: -

在庫15,723

S27KL0643DPBHI023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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BTS54220LBAXUMA1

Infineon Technologies

BTS54220-LBA - SPOC+ SPI POWER C

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: SPI
Voltage - Load: 5.5V ~ 28V
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Current - Output (Max): -
Rds On (Typ): 9mOhm, 27mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 24-PowerTDFN
Supplier Device Package: PG-TSON-24-3

パッケージ: -

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IPN60R2K0PFD7SATMA1

Infineon Technologies

MOSFET N-CH 600V 3A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-3-1
Package / Case: TO-261-3

パッケージ: -

在庫46,305

CY8C4128AXI-S455

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64TQFP

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

パッケージ: -

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S6J32JEKSNSE20000

Infineon Technologies

IC MCU 32B 4.171875MB FL 208QFP

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 120
Program Memory Size: 4.171875MB (4.171875M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 2.125M x 8
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Data Converters: A/D 46x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Supplier Device Package: 208-TEQFP (28x28)

パッケージ: -

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CY9AFA42LAPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 51
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 12x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (12x12)

パッケージ: -

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2EDN7533RXTMA1

Infineon Technologies

DRIVER IC PG-TSSOP-8

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 20V
Logic Voltage - VIL, VIH: 1.4V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 8.6ns, 6ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: PG-TSSOP-8

パッケージ: -

在庫14,928

IPP60R170CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 14A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

パッケージ: -

在庫1,272

TDA38812XUMA1

Infineon Technologies

IFX POL

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 5.5V
Current - Output: 12A
Frequency - Switching: 600kHz, 800kHz, 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 21-PowerUFQFN
Supplier Device Package: PG-TSNP-21-1

パッケージ: -

在庫8,655