Infineon Technologies 製品

SPI20N60C3HKSA1

Infineon Technologies

MOSFET N-CH 600V 20.7A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF3007PBF

Infineon Technologies

MOSFET N-CH 75V 75A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 48A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

パッケージ: TO-220-3

SN7002N L6327

Infineon Technologies

MOSFET N-CH 60V 200MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 26µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

IRLIB9343PBF

Infineon Technologies

MOSFET P-CH 55V 14A TO220FP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

IPD50R280CEAUMA1

Infineon Technologies

MOSFET N-CH 550V 18.1A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 350µA
• Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 119W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR3705ZPBF

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

BG3130H6327XTSA1

Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT363

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Test: 5V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

パッケージ: 6-VSSOP, SC-88, SOT-363

BB 555 E7902

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD-80

• Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
• Capacitance Ratio: 9.8
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

パッケージ: SC-80

IDD10SG60CXTMA1

Infineon Technologies

DIODE SCHOTTKY 600V 10A TO252-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 90µA @ 600V
• Capacitance @ Vr, F: 290pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

IRU1015-33CDTR

Infineon Technologies

IC REG LINEAR 3.3V 1.5A DPAK

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE4254GSXUMA3

Infineon Technologies

IC REG LINEAR POS ADJ 70MA 8DSO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): Tracking
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 70mA
• Current - Output: 70mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA ~ 15mA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IFX1117ME V33

Infineon Technologies

IC REG LINEAR 3.3V 1A SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

TLE7238GSXUMA1

Infineon Technologies

IC DRIVER SPI 8CH HS/LS 24-SSOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 9 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 130mA, 260mA
• Rds On (Typ): 900 mOhm, 1.6 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: PG-SSOP-24

パッケージ: 24-SSOP (0.154", 3.90mm Width)

TLE4208G

Infineon Technologies

IC MOTOR DRIVER PAR 28DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Bipolar
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 5 V ~ 18 V
• Voltage - Load: 5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-28

パッケージ: 28-SOIC (0.295", 7.50mm Width)

SAX-XC878L-16FFA 5V AA

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: LIN, SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

SAF-XE167KM-72F80L AA

Infineon Technologies

IC MCU 16BIT 576KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 119
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

パッケージ: 144-LQFP Exposed Pad

BTS428L2NT

Infineon Technologies

SWITCH HIGH SIDE POWER TO252-5

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

TLE9461ESXUMA1

Infineon Technologies

IC TXRX CAN LITE SBC 2MBPS

• Type: System Basis Chip (SBC)
• Applications: CAN Automotive
• Mounting Type: Surface Mount
• Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-24-1

パッケージ: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad

99326-E1241

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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CYS0644ABZI-S2D44

Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 100
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

パッケージ: -

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CG7772AA

Infineon Technologies

IC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Single Port, Synchronous, ZBT
• Memory Size: 72Mbit
• Memory Interface: Parallel
• Clock Frequency: 167 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.4 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20)

パッケージ: -

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SIDC05D60C8X7SA2

Infineon Technologies

DIODE GEN PURP 600V 15A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

パッケージ: -

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S29GL128S11DHBV23

Infineon Technologies

IC FLASH 128MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 110 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (9x9)

パッケージ: -

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CG8465AT

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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FP50R12N2T7PBPSA1

Infineon Technologies

1200 V, 50 A PIM IGBT MODULE

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
• Current - Collector Cutoff (Max): 4 µA
• Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

パッケージ: -

F4200R12N3H3FB11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3B-411

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

S76HS512TC0BHB013

Infineon Technologies

IC FLSH RAM 512MBIT HYPRBS 24BGA

• Memory Type: Non-Volatile, Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH, RAM
• Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 24-BGA
• Supplier Device Package: PG-BGA-24

パッケージ: -

IPP139N08N3GXKSA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

パッケージ: -

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