Infineon Technologies 製品

IRG6S330UPBF

Infineon Technologies

IGBT 330V 70A 160W D2PAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 86nC
• Td (on/off) @ 25°C: 39ns/120ns
• Test Condition: 196V, 25A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC20UD-STRL

Infineon Technologies

IGBT 600V 13A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 160µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 39ns/93ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPC302N15N3X7SA1

Infineon Technologies

MV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

BSZ12DN20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 11.3A 8TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

BSC042N03MSGATMA1

Infineon Technologies

MOSFET N-CH 30V 93A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 93A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

IPD70R1K4CEAUMA1

Infineon Technologies

MOSFET N-CH 700V 5.4A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 53W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

PTRA093608PV1V1R2HTMA1

Infineon Technologies

IC RF LDMOS FET LG-31275PS-6

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IPG20N04S408AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
• Power - Max: 65W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

パッケージ: 8-PowerVDFN

TLE75620EMTXUMA1

Infineon Technologies

IC POWER SWITCH SPIDER SSOP24

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 3 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 330mA
• Rds On (Typ): 1 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

IRS21281STRPBF

Infineon Technologies

IC DVR CURRENT SENSE 1CH 8-SOIC

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 9 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

IR2132STR

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

パッケージ: 28-SOIC (0.295", 7.50mm Width)

IRSM836-015MA

Infineon Technologies

IC MOTOR DRIVER 500V QFN

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 4.8 Ohm
• Current - Output / Channel: 1A
• Current - Peak Output: 7A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 36-PowerVQFN
• Supplier Device Package: 36-PQFN (12x12)

パッケージ: 36-PowerVQFN

98-1048PBF

Infineon Technologies

IC AUDIO DRIVER DIGITAL

• Type: -
• Output Type: -
• Max Output Power x Channels @ Load: -
• Voltage - Supply: -
• Features: -
• Mounting Type: -
• Operating Temperature: -
• Supplier Device Package: -
• Package / Case: -

パッケージ: -

PBL38640/2SOA

Infineon Technologies

IC LINE INTERFACE SLIC PDSO24-8

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 5V
• Current - Supply: 2.8mA
• Power (Watts): 730mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-24

パッケージ: 24-SOIC (0.295", 7.50mm Width)

TLE6251GNTMA1

Infineon Technologies

IC TXRX CAN STD HI SPEED 14SOIC

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Full
• Receiver Hysteresis: 400mV
• Data Rate: 1MBd
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: P-DSO-14

パッケージ: 14-SOIC (0.154", 3.90mm Width)

CY9AFA42MABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 160KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 160KB (160K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

パッケージ: -

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DD600N18KXPSA1

Infineon Technologies

DIODE MOD GP 1800V BGPB60E2A-1

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io) (per Diode): 600A
• Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 mA @ 1.8 kV
• Operating Temperature - Junction: 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB60E2A-1

パッケージ: -

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CY95F562KNPFT-G101UNERE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: LINbus, UART/USART
• Peripherals: LVD, LVR, POR, PWM, WDT
• Number of I/O: 17
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 240 x 8
• Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
• Data Converters: A/D 6x8/10b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

パッケージ: -

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FP15R06W1E3BOMA1

Infineon Technologies

IGBT MODULE 600V 22A 81W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 22 A
• Power - Max: 81 W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 830 pF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

パッケージ: -

CY9AF144MABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

パッケージ: -

IDD08SG60CXTMA2

Infineon Technologies

DIODE SIL CARB 600V 8A TO252-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 70 µA @ 600 V
• Capacitance @ Vr, F: 240pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

IPB017N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 180A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 196µA
• Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7
• Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

パッケージ: -

IPW60R199CPFKSA1

Infineon Technologies

MOSFET N-CH 600V 16A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 660µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 139W (Tc)
• Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

パッケージ: -

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P770011CF9C006

Infineon Technologies

IC FLASH MEM NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

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SPA11N80C3XKSA1

Infineon Technologies

MOSFET N-CH 800V 11A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 680µA
• Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31
• Package / Case: TO-220-3 Full Pack

パッケージ: -

DZ1070N18KHPSA3

Infineon Technologies

DIODE GP 1.8KV 1100A MODULE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 1100A
• Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: -

CYPM1011-24LQXIT

Infineon Technologies

IC MCU 32BIT 64KB FLASH 24QFN

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number of I/O: 12
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

パッケージ: -

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IPDQ65R125CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 390µA
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 160W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-22-1
• Package / Case: 22-PowerBSOP Module

パッケージ: -