ページ 468 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRGP4078D-EPBF	Infineon Technologies	IGBT 600V 74A 278W TO247AD IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 74A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 278W Switching Energy: 1.1mJ (off) Input Type: Standard Gate Charge: 92nC Td (on/off) @ 25°C: -/116ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	パッケージ: TO-247-3	在庫5,712
AUIRFR1018E	Infineon Technologies	MOSFET N-CH 60V 79A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,320
IPB80N06S2L11ATMA1	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫3,632
SPP07N60S5	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫654,888
IRF9520NSTRR	Infineon Technologies	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫6,912
IPB90N06S4L04ATMA2	Infineon Technologies	MOSFET N-CH 60V 90A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫4,464
IPD50R380CE	Infineon Technologies	MOSFET N CH 500V 9.9A PG-TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): 73W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫3,456
IPA70R600P7SXKSA1	Infineon Technologies	MOSFET N-CH 700V 20.5 TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫8,736
IR3565BMTR1PBF	Infineon Technologies	IC REG CTRLR DL BUCK PWM 48QFN Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (6x6)	パッケージ: 48-VFQFN Exposed Pad	在庫3,392
BSP75NHUMA1	Infineon Technologies	IC SWITCH POWER LOSIDE SOT223-4 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Rds On (Typ): 430 mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	パッケージ: TO-261-4, TO-261AA	在庫200,628
IR4427STR	Infineon Technologies	IC DRIVER DUAL LOW SIDE 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 6 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 2.3A, 3.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 10ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫49,584
IR2117STRPBF	Infineon Technologies	IC MOSFET DRIVER 1CHANNEL 8SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫418,164
TLS115B0LDXUMA1	Infineon Technologies	IC REG LIN POS ADJ 150MA TSON-10 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 2V Voltage - Output (Max): 14V Voltage Dropout (Max): 0.5V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): 90µA Current - Supply (Max): 14mA PSRR: 85dB (100Hz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-TFDFN Exposed Pad Supplier Device Package: PG-TSON-10	パッケージ: 10-TFDFN Exposed Pad	在庫4,128
SIGC25T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 30A, 8.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	Request a Quote
BSM35GB120DN2HOSA1	Infineon Technologies	IGBT MOD 1200V 50A 280W IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 280 W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
IRF7420TRPBF-1	Infineon Technologies	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: -	Request a Quote
F417MR12W1M1HPB76BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫30
SAK-TC1762-128F80HLAC	Infineon Technologies	32-BIT RISC FLASH MCU Core Processor: TriCore™ Core Size: 32-Bit Speed: 80MHz Connectivity: ASC, CANbus, MLI, MSC, SSC Peripherals: DMA, POR, WDT Number of I/O: 81 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: 16K x 8 RAM Size: 52K x 8 Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Data Converters: A/D 36x8/10/12b SAR Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Supplier Device Package: PG-LQFP-176-2	パッケージ: -	Request a Quote
BTG70901EPLXUMA1	Infineon Technologies	PROFET Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: - Voltage - Load: 2.7V ~ 28V Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V Current - Output (Max): 2A Rds On (Typ): 90mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14	パッケージ: -	在庫1,755
CY9BF522LPMC-GNE2	Infineon Technologies	IC MCU 32BIT 160KB FLASH 64LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 72MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 50 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 23x12b SAR; D/A 2x10b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (12x12)	パッケージ: -	Request a Quote
IPB80P04P405ATMA2	Infineon Technologies	MOSFET P-CH 40V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	パッケージ: -	在庫5,595
S80KS5122GABHI020	Infineon Technologies	IC PSRAM 512MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	在庫1,068
ISC007N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
TC377TP96F300SAAKXUMA1	Infineon Technologies	IC MCU 32BIT 6MB FLASH 292LFBGA Core Processor: TriCore™ Core Size: 32-Bit Tri-Core Speed: 300MHz Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Number of I/O: - Program Memory Size: 6MB (6M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1.1M x 8 Voltage - Supply (Vcc/Vdd): 3.3V, 5V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 292-LFBGA Supplier Device Package: PG-LFBGA-292-6	パッケージ: -	在庫4,260
1ED44171N01BXTSA1	Infineon Technologies	SINGLE-CHANNEL LOW-SIDE GATE DRI Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 12.7V ~ 20V Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 2.6A, 2.6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 5ns, 5ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: PG-SOT23-5-1	パッケージ: -	在庫12,213
645726800A	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
CY8C4147AZS-S265	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16, 20x10/12b SAR Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: -	在庫3,330
S70KS1282GABHM020	Infineon Technologies	IC PSRAM 128MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	パッケージ: -	Request a Quote

IRGP4078D-EPBF

Infineon Technologies

IGBT 600V 74A 278W TO247AD

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 74A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 278W
Switching Energy: 1.1mJ (off)
Input Type: Standard
Gate Charge: 92nC
Td (on/off) @ 25°C: -/116ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

パッケージ: TO-247-3

在庫5,712

AUIRFR1018E

Infineon Technologies

MOSFET N-CH 60V 79A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,320

IPB80N06S2L11ATMA1

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫3,632

SPP07N60S5

Infineon Technologies

MOSFET N-CH 650V 7.3A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫654,888

IRF9520NSTRR

Infineon Technologies

MOSFET P-CH 100V 6.8A D2PAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫6,912

IPB90N06S4L04ATMA2

Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫4,464

IPD50R380CE

Infineon Technologies

MOSFET N CH 500V 9.9A PG-TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 24.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 100V
Vgs (Max): ±20V
FET Feature: Super Junction
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫3,456

IPA70R600P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 20.5 TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫8,736

IR3565BMTR1PBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 48QFN

Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (6x6)

パッケージ: 48-VFQFN Exposed Pad

在庫3,392

BSP75NHUMA1

Infineon Technologies

IC SWITCH POWER LOSIDE SOT223-4

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Rds On (Typ): 430 mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

パッケージ: TO-261-4, TO-261AA

在庫200,628

IR4427STR

Infineon Technologies

IC DRIVER DUAL LOW SIDE 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 6 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 10ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫49,584

IR2117STRPBF

Infineon Technologies

IC MOSFET DRIVER 1CHANNEL 8SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫418,164

TLS115B0LDXUMA1

Infineon Technologies

IC REG LIN POS ADJ 150MA TSON-10

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 2V
Voltage - Output (Max): 14V
Voltage Dropout (Max): 0.5V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): 90µA
Current - Supply (Max): 14mA
PSRR: 85dB (100Hz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-TFDFN Exposed Pad
Supplier Device Package: PG-TSON-10

パッケージ: 10-TFDFN Exposed Pad

在庫4,128

SIGC25T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 30A, 8.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

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BSM35GB120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 50A 280W

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 280 W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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IRF7420TRPBF-1

Infineon Technologies

MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3529 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: -

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F417MR12W1M1HPB76BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫30

SAK-TC1762-128F80HLAC

Infineon Technologies

32-BIT RISC FLASH MCU

Core Processor: TriCore™
Core Size: 32-Bit
Speed: 80MHz
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Number of I/O: 81
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: 16K x 8
RAM Size: 52K x 8
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Data Converters: A/D 36x8/10/12b SAR
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Supplier Device Package: PG-LQFP-176-2

パッケージ: -

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BTG70901EPLXUMA1

Infineon Technologies

PROFET

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: -
Voltage - Load: 2.7V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
Current - Output (Max): 2A
Rds On (Typ): 90mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14

パッケージ: -

在庫1,755

CY9BF522LPMC-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 72MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 50
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 23x12b SAR; D/A 2x10b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (12x12)

パッケージ: -

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IPB80P04P405ATMA2

Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

パッケージ: -

在庫5,595

S80KS5122GABHI020

Infineon Technologies

IC PSRAM 512MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

在庫1,068

ISC007N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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TC377TP96F300SAAKXUMA1

Infineon Technologies

IC MCU 32BIT 6MB FLASH 292LFBGA

Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Speed: 300MHz
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Number of I/O: -
Program Memory Size: 6MB (6M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1.1M x 8
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Supplier Device Package: PG-LFBGA-292-6

パッケージ: -

在庫4,260

1ED44171N01BXTSA1

Infineon Technologies

SINGLE-CHANNEL LOW-SIDE GATE DRI

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 12.7V ~ 20V
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 5ns, 5ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: PG-SOT23-5-1

パッケージ: -

在庫12,213

645726800A

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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CY8C4147AZS-S265

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16, 20x10/12b SAR
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

在庫3,330

S70KS1282GABHM020

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

パッケージ: -

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