ページ 98 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRG4BH20K-S	Infineon Technologies	IGBT 1200V 11A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫3,552
IPD64CN10N G	Infineon Technologies	MOSFET N-CH 100V 17A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 569pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫2,000
IPB147N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 20A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫4,128
IRFU3707ZPBF	Infineon Technologies	MOSFET N-CH 30V 56A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫240,108
IPB240N04S4R9ATMA1	Infineon Technologies	MOSFET N-CH TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 0.87 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	パッケージ: TO-263-7, D2Pak (6 Leads + Tab)	在庫7,168
IRF1010NSPBF	Infineon Technologies	MOSFET N-CH 55V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫7,264
BSB165N15NZ3 G	Infineon Technologies	MOSFET N-CH 150V 9A WDSON-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	パッケージ: 3-WDSON	在庫913,920
BC 808-25 E6327	Infineon Technologies	TRANS PNP 25V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫6,704
BAT6207L4E6327XT	Infineon Technologies	DIODE SCHOTTKY 40V 20MA TSLP-4 Diode Type: Schottky - 2 Independent Voltage - Peak Reverse (Max): 40V Current - Max: 20mA Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Resistance @ If, F: - Power Dissipation (Max): 100mW Operating Temperature: 150°C (TJ) Package / Case: 4-XFDFN Supplier Device Package: PG-TSLP-4	パッケージ: 4-XFDFN	在庫5,680
IDK03G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500µA @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫5,136
IRU3038CF	Infineon Technologies	IC REG CTRLR BUCK/BOOST 14TSSOP Output Type: Transistor Driver Function: Step-Up, Step-Down Output Configuration: Positive Topology: Buck, Boost Number of Outputs: 1 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V Frequency - Switching: 200kHz Duty Cycle (Max): 90% Synchronous Rectifier: Yes Clock Sync: No Serial Interfaces: - Control Features: Frequency Control, Soft Start Operating Temperature: 0°C ~ 70°C (TA) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫20,352
IRMCK188TY	Infineon Technologies	IC MOTOR CONTROLLER Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,184
IRSM515-044PA	Infineon Technologies	IC MOTOR DRIVER 600V 23SOP Output Configuration: Half Bridge (3) Applications: AC Motors Interface: Logic Load Type: Inductive Technology: UMOS Rds On (Typ): 800 mOhm Current - Output / Channel: 3A Current - Peak Output: 15A Voltage - Supply: 13.5 V ~ 16.5 V Voltage - Load: 200V (Max) Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit Fault Protection: UVLO Mounting Type: Surface Mount Package / Case: 32-PowerSMD Module, 23 Leads Supplier Device Package: 23-SOP	パッケージ: 32-PowerSMD Module, 23 Leads	在庫6,320
SAK-XC2210U-8F40R AA	Infineon Technologies	IC MCU 16BIT 64KB FLASH 38TSSOP Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 40MHz Connectivity: I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 28 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 8x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: 38-TSSOP	パッケージ: 38-TFSOP (0.173", 4.40mm Width)	在庫4,496
XMC4800E196K2048AAXQMA1	Infineon Technologies	IC MCU 32BIT 2MB FLASH 196BGA Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 144MHz Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT Number of I/O: 155 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 352K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 32x12b, D/A 2x12b Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 196-LFBGA Supplier Device Package: PG-LFBGA-196-2	パッケージ: 196-LFBGA	在庫4,800
ESD5V3U4UHDMIE6327XTSA1	Infineon Technologies	TVS DIODE 5.3VWM 28VC TSLP9 Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5.3V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 28V (Typ) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: PG-TSLP-9	パッケージ: 8-XFDFN Exposed Pad	在庫5,850
IRFH8334TR2PBF	Infineon Technologies	MOSFET N-CH 30V 12A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	パッケージ: -	Request a Quote
CYPD3135-32LQXQT	Infineon Technologies	CCG3 Protocol: USB Function: Controller Interface: I2C, SPI, UART, USB Standards: USB 3.0 Voltage - Supply: 2.7V ~ 21.5V Current - Supply: 25mA Operating Temperature: -40°C ~ 105°C (TA) Package / Case: 32-UFQFN Exposed Pad Supplier Device Package: 32-QFN (5x5)	パッケージ: -	Request a Quote
FF11MR12W1M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	パッケージ: -	Request a Quote
S6J335EJBESE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART Peripherals: DMA, LVD, LVR, POR, PWM, WDT Number of I/O: 176 Program Memory Size: 4.16MB (4.16M x 8) Program Memory Type: FLASH EEPROM Size: 112K x 8 RAM Size: 544K x 8 Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	パッケージ: -	Request a Quote
S25HS02GTFABHB053XUMA1	Infineon Technologies	SEMPER Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
63-8028	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
IAUT150N10S5N035ATMA1	Infineon Technologies	MOSFET N-CH 100V 150A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	パッケージ: -	在庫22,539
FS100R12KT4BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO2B-411 IGBT Type: Trench Field Stop Configuration: Full Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Power - Max: 515 W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO3	パッケージ: -	Request a Quote
IPF019N12NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	パッケージ: -	Request a Quote
IPDD60R105CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 31A HDSOP-10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 198W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-10-1 Package / Case: 10-PowerSOP Module	パッケージ: -	在庫216
S29GL256N11TFI020	Infineon Technologies	IC FLASH 256MBIT PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	パッケージ: -	Request a Quote
S70GL02GT11FHB023	Infineon Technologies	IC FLASH 2GBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	パッケージ: -	Request a Quote

IRG4BH20K-S

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫3,552

IPD64CN10N G

Infineon Technologies

MOSFET N-CH 100V 17A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 569pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 64 mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫2,000

IPB147N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 20A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫4,128

IRFU3707ZPBF

Infineon Technologies

MOSFET N-CH 30V 56A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫240,108

IPB240N04S4R9ATMA1

Infineon Technologies

MOSFET N-CH TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 0.87 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

パッケージ: TO-263-7, D2Pak (6 Leads + Tab)

在庫7,168

IRF1010NSPBF

Infineon Technologies

MOSFET N-CH 55V 85A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫7,264

BSB165N15NZ3 G

Infineon Technologies

MOSFET N-CH 150V 9A WDSON-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MG-WDSON-2, CanPAK M?
Package / Case: 3-WDSON

パッケージ: 3-WDSON

在庫913,920

BC 808-25 E6327

Infineon Technologies

TRANS PNP 25V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Power - Max: 330mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫6,704

BAT6207L4E6327XT

Infineon Technologies

DIODE SCHOTTKY 40V 20MA TSLP-4

Diode Type: Schottky - 2 Independent
Voltage - Peak Reverse (Max): 40V
Current - Max: 20mA
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Resistance @ If, F: -
Power Dissipation (Max): 100mW
Operating Temperature: 150°C (TJ)
Package / Case: 4-XFDFN
Supplier Device Package: PG-TSLP-4

パッケージ: 4-XFDFN

在庫5,680

IDK03G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 3A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 500µA @ 650V
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫5,136

IRU3038CF

Infineon Technologies

IC REG CTRLR BUCK/BOOST 14TSSOP

Output Type: Transistor Driver
Function: Step-Up, Step-Down
Output Configuration: Positive
Topology: Buck, Boost
Number of Outputs: 1
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 4.2 V ~ 25 V
Frequency - Switching: 200kHz
Duty Cycle (Max): 90%
Synchronous Rectifier: Yes
Clock Sync: No
Serial Interfaces: -
Control Features: Frequency Control, Soft Start
Operating Temperature: 0°C ~ 70°C (TA)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫20,352

IRMCK188TY

Infineon Technologies

IC MOTOR CONTROLLER

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,184

IRSM515-044PA

Infineon Technologies

IC MOTOR DRIVER 600V 23SOP

Output Configuration: Half Bridge (3)
Applications: AC Motors
Interface: Logic
Load Type: Inductive
Technology: UMOS
Rds On (Typ): 800 mOhm
Current - Output / Channel: 3A
Current - Peak Output: 15A
Voltage - Supply: 13.5 V ~ 16.5 V
Voltage - Load: 200V (Max)
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit
Fault Protection: UVLO
Mounting Type: Surface Mount
Package / Case: 32-PowerSMD Module, 23 Leads
Supplier Device Package: 23-SOP

パッケージ: 32-PowerSMD Module, 23 Leads

在庫6,320

SAK-XC2210U-8F40R AA

Infineon Technologies

IC MCU 16BIT 64KB FLASH 38TSSOP

Core Processor: C166SV2
Core Size: 16/32-Bit
Speed: 40MHz
Connectivity: I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 28
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 8x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: 38-TSSOP

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

在庫4,496

XMC4800E196K2048AAXQMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 196BGA

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 144MHz
Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Number of I/O: 155
Program Memory Size: 2MB (2M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 352K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 32x12b, D/A 2x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 196-LFBGA
Supplier Device Package: PG-LFBGA-196-2

パッケージ: 196-LFBGA

在庫4,800

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

TVS DIODE 5.3VWM 28VC TSLP9

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: PG-TSLP-9

パッケージ: 8-XFDFN Exposed Pad

在庫5,850

IRFH8334TR2PBF

Infineon Technologies

MOSFET N-CH 30V 12A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

パッケージ: -

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CYPD3135-32LQXQT

Infineon Technologies

CCG3

Protocol: USB
Function: Controller
Interface: I2C, SPI, UART, USB
Standards: USB 3.0
Voltage - Supply: 2.7V ~ 21.5V
Current - Supply: 25mA
Operating Temperature: -40°C ~ 105°C (TA)
Package / Case: 32-UFQFN Exposed Pad
Supplier Device Package: 32-QFN (5x5)

パッケージ: -

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FF11MR12W1M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

パッケージ: -

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S6J335EJBESE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LVD, LVR, POR, PWM, WDT
Number of I/O: 176
Program Memory Size: 4.16MB (4.16M x 8)
Program Memory Type: FLASH
EEPROM Size: 112K x 8
RAM Size: 544K x 8
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

パッケージ: -

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S25HS02GTFABHB053XUMA1

Infineon Technologies

SEMPER

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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63-8028

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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IAUT150N10S5N035ATMA1

Infineon Technologies

MOSFET N-CH 100V 150A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

パッケージ: -

在庫22,539

FS100R12KT4BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

IGBT Type: Trench Field Stop
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Power - Max: 515 W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO3

パッケージ: -

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IPF019N12NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

パッケージ: -

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IPDD60R105CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 31A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

パッケージ: -

在庫216

S29GL256N11TFI020

Infineon Technologies

IC FLASH 256MBIT PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

パッケージ: -

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S70GL02GT11FHB023

Infineon Technologies

IC FLASH 2GBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

パッケージ: -

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