ページ 95 - Infineon Technologies 製品

部品番号	メーカ	説明	パッケージ	在庫
IRG5K100HF12A	Infineon Technologies	MOD IGBT 1200V 100A POWIR 34 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Power - Max: 620W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 12.9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 34 Module Supplier Device Package: POWIR? 34	パッケージ: POWIR? 34 Module	在庫5,392
IPD110N12N3GBUMA1	Infineon Technologies	MOSFET N-CH 120V 75A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫3,552
IRF6715MTR1PBF	Infineon Technologies	MOSFET N-CH 25V 34A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	パッケージ: DirectFET? Isometric MX	在庫2,256
IRF6712STR1PBF	Infineon Technologies	MOSFET N-CH 25V 17A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	パッケージ: DirectFET? Isometric SQ	在庫2,000
IRL3102PBF	Infineon Technologies	MOSFET N-CH 20V 61A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫12,660
IPC302N08N3X1SA1	Infineon Technologies	MOSFET N-CH 80V BARE DIE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 1A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Sawn on foil Package / Case: Die	パッケージ: Die	在庫6,240
IPB80N04S304ATMA1	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	在庫5,776
IPU80R3K3P7AKMA1	Infineon Technologies	MOSFET N-CH 800V COOLMOS TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	パッケージ: TO-251-3 Short Leads, IPak, TO-251AA	在庫3,840
IRF60B217	Infineon Technologies	MOSFET N-CH 60V 60A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	パッケージ: TO-220-3	在庫103,464
BSZ900N20NS3 G	Infineon Technologies	MOSFET N-CH 200V 15.2A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	パッケージ: 8-PowerTDFN	在庫235,080
PTFB192557SHV1R250XTMA1	Infineon Technologies	IC FET RF LDMOS H-34288G-4/2 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 19dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 1.35A Power - Output: 60W Voltage - Rated: 65V Package / Case: H-34288G-4/2 Supplier Device Package: H-34288G-4/2	パッケージ: H-34288G-4/2	在庫5,872
PTFA192001FV4FWSA1	Infineon Technologies	IC FET RF LDMOS 200W H-37260-2 Transistor Type: LDMOS Frequency: 1.99GHz Gain: 15.9dB Voltage - Test: 30V Current Rating: 10µA Noise Figure: - Current - Test: 1.8A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2	パッケージ: 2-Flatpack, Fin Leads, Flanged	在庫6,368
PEB 2026 T-S V1.1	Infineon Technologies	IC CTRLR N-CH ISDN HV PDSO-20-6 Type: - Applications: - Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: P-DSO-20	パッケージ: 20-SOIC (0.295", 7.50mm Width)	在庫4,576
TLE4699EXUMA1	Infineon Technologies	IC REG LINEAR 5V 200MA 14SSOP Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.35V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 100µA ~ 10mA PSRR: 65dB (100Hz) Control Features: Enable, Reset Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14-EP	パッケージ: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad	在庫24,228
IRS2334MPBF	Infineon Technologies	IC MOSFET DRIVER Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-VFQFN Exposed Pad Supplier Device Package: 28-MLPQ (5x5)	パッケージ: 28-VFQFN Exposed Pad	在庫2,336
ICE2QS02GXUMA1	Infineon Technologies	IC CTRLR PWM QUASI-RESON 8DSO Output Isolation: Isolated Internal Switch(s): No Voltage - Breakdown: - Topology: Flyback Voltage - Start Up: 12V Voltage - Supply (Vcc/Vdd): 11 V ~ 25 V Duty Cycle: - Frequency - Switching: 20Khz ~ 150kHz Power (Watts): - Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage Control Features: - Operating Temperature: -25°C ~ 125°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8 Mounting Type: Surface Mount	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫6,160
ICE3AR0680JZXKLA1	Infineon Technologies	IC OFFLINE CTRLR SMPS CM 7DIP Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback Voltage - Start Up: 17V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 75% Frequency - Switching: 100kHz Power (Watts): 82W Fault Protection: Over Load, Over Temperature, Over Voltage Control Features: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Supplier Device Package: PG-DIP-7 Mounting Type: Through Hole	パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads	在庫17,160
SAF-XC866L-2FRA BE	Infineon Technologies	IC MCU 8BIT 8KB FLASH 38TSSOP Core Processor: XC800 Core Size: 8-Bit Speed: 86MHz Connectivity: LIN, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 19 Program Memory Size: 8KB (8K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 768 x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 38-TFSOP (0.173", 4.40mm Width) Supplier Device Package: 38-TSSOP	パッケージ: 38-TFSOP (0.173", 4.40mm Width)	在庫5,632
DD180N20SHPSA1	Infineon Technologies	DIODE MOD GP 2000V 226A BGPB34SB Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io) (per Diode): 226A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 2000 V Operating Temperature - Junction: -40°C ~ 135°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34SB-1	パッケージ: -	Request a Quote
FP15R12W1T4PB11BPSA1	Infineon Technologies	IGBT MOD 1200V 30A 20MW IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 890 pF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote
IPP026N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 81µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	パッケージ: -	在庫2,982
CY8C4148AZES565XQLA1	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	パッケージ: -	Request a Quote
CY8C4125LQA-S423T	Infineon Technologies	PSOC4 - GENERAL Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-UFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	パッケージ: -	Request a Quote
CYT2B93CACQ0AZSGST	Infineon Technologies	IC MCU 32BT 2.0625MB FLSH 64LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 49 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 45x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: -	在庫8,940
CY9AF341MABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 96KB FLASH 96FBGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 96KB (96K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 17x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-FBGA (6x6)	パッケージ: -	Request a Quote
FZ1600R12KF4S1NOSA1	Infineon Technologies	IGBT MODULE 1200V AIHM130-2 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
TLE4253GSXUMA4	Infineon Technologies	IC REG LDO ADJ 0.25A 8DSOP Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): Tracking Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 200mA Current - Output: 250mA Current - Quiescent (Iq): 150 µA Current - Supply (Max): 15 mA PSRR: 60dB (100Hz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	パッケージ: -	在庫7,500
FF400R17KE4EHOSA1	Infineon Technologies	IGBT MODULE 1700V 400A IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 400 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	パッケージ: -	Request a Quote

IRG5K100HF12A

Infineon Technologies

MOD IGBT 1200V 100A POWIR 34

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 200A
Power - Max: 620W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 12.9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 34 Module
Supplier Device Package: POWIR? 34

パッケージ: POWIR? 34 Module

在庫5,392

IPD110N12N3GBUMA1

Infineon Technologies

MOSFET N-CH 120V 75A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 60V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫3,552

IRF6715MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 34A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? MX
Package / Case: DirectFET? Isometric MX

パッケージ: DirectFET? Isometric MX

在庫2,256

IRF6712STR1PBF

Infineon Technologies

MOSFET N-CH 25V 17A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DIRECTFET? SQ
Package / Case: DirectFET? Isometric SQ

パッケージ: DirectFET? Isometric SQ

在庫2,000

IRL3102PBF

Infineon Technologies

MOSFET N-CH 20V 61A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫12,660

IPC302N08N3X1SA1

Infineon Technologies

MOSFET N-CH 80V BARE DIE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Sawn on foil
Package / Case: Die

パッケージ: Die

在庫6,240

IPB80N04S304ATMA1

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

在庫5,776

IPU80R3K3P7AKMA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 18W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

パッケージ: TO-251-3 Short Leads, IPak, TO-251AA

在庫3,840

IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫103,464

BSZ900N20NS3 G

Infineon Technologies

MOSFET N-CH 200V 15.2A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

パッケージ: 8-PowerTDFN

在庫235,080

PTFB192557SHV1R250XTMA1

Infineon Technologies

IC FET RF LDMOS H-34288G-4/2

Transistor Type: LDMOS
Frequency: 1.99GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 1.35A
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: H-34288G-4/2
Supplier Device Package: H-34288G-4/2

パッケージ: H-34288G-4/2

在庫5,872

PTFA192001FV4FWSA1

Infineon Technologies

IC FET RF LDMOS 200W H-37260-2

Transistor Type: LDMOS
Frequency: 1.99GHz
Gain: 15.9dB
Voltage - Test: 30V
Current Rating: 10µA
Noise Figure: -
Current - Test: 1.8A
Power - Output: 50W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37260-2

パッケージ: 2-Flatpack, Fin Leads, Flanged

在庫6,368

PEB 2026 T-S V1.1

Infineon Technologies

IC CTRLR N-CH ISDN HV PDSO-20-6

Type: -
Applications: -
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: P-DSO-20

パッケージ: 20-SOIC (0.295", 7.50mm Width)

在庫4,576

TLE4699EXUMA1

Infineon Technologies

IC REG LINEAR 5V 200MA 14SSOP

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.35V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 100µA ~ 10mA
PSRR: 65dB (100Hz)
Control Features: Enable, Reset
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14-EP

パッケージ: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

在庫24,228

IRS2334MPBF

Infineon Technologies

IC MOSFET DRIVER

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Supplier Device Package: 28-MLPQ (5x5)

パッケージ: 28-VFQFN Exposed Pad

在庫2,336

ICE2QS02GXUMA1

Infineon Technologies

IC CTRLR PWM QUASI-RESON 8DSO

Output Isolation: Isolated
Internal Switch(s): No
Voltage - Breakdown: -
Topology: Flyback
Voltage - Start Up: 12V
Voltage - Supply (Vcc/Vdd): 11 V ~ 25 V
Duty Cycle: -
Frequency - Switching: 20Khz ~ 150kHz
Power (Watts): -
Fault Protection: Current Limiting, Open Loop, Over Load, Over Voltage
Control Features: -
Operating Temperature: -25°C ~ 125°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
Mounting Type: Surface Mount

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫6,160

ICE3AR0680JZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback
Voltage - Start Up: 17V
Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
Duty Cycle: 75%
Frequency - Switching: 100kHz
Power (Watts): 82W
Fault Protection: Over Load, Over Temperature, Over Voltage
Control Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Supplier Device Package: PG-DIP-7
Mounting Type: Through Hole

パッケージ: 8-DIP (0.300", 7.62mm), 7 Leads

在庫17,160

SAF-XC866L-2FRA BE

Infineon Technologies

IC MCU 8BIT 8KB FLASH 38TSSOP

Core Processor: XC800
Core Size: 8-Bit
Speed: 86MHz
Connectivity: LIN, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 19
Program Memory Size: 8KB (8K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 768 x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Supplier Device Package: 38-TSSOP

パッケージ: 38-TFSOP (0.173", 4.40mm Width)

在庫5,632

DD180N20SHPSA1

Infineon Technologies

DIODE MOD GP 2000V 226A BGPB34SB

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000 V
Current - Average Rectified (Io) (per Diode): 226A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 2000 V
Operating Temperature - Junction: -40°C ~ 135°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB34SB-1

パッケージ: -

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FP15R12W1T4PB11BPSA1

Infineon Technologies

IGBT MOD 1200V 30A 20MW

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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IPP026N04NF2SAKMA1

Infineon Technologies

TRENCH PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

パッケージ: -

在庫2,982

CY8C4148AZES565XQLA1

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

パッケージ: -

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CY8C4125LQA-S423T

Infineon Technologies

PSOC4 - GENERAL

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

パッケージ: -

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CYT2B93CACQ0AZSGST

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 64LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 49
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 45x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: -

在庫8,940

CY9AF341MABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 96KB FLASH 96FBGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 96KB (96K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 17x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-FBGA (6x6)

パッケージ: -

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FZ1600R12KF4S1NOSA1

Infineon Technologies

IGBT MODULE 1200V AIHM130-2

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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TLE4253GSXUMA4

Infineon Technologies

IC REG LDO ADJ 0.25A 8DSOP

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 200mA
Current - Output: 250mA
Current - Quiescent (Iq): 150 µA
Current - Supply (Max): 15 mA
PSRR: 60dB (100Hz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

パッケージ: -

在庫7,500

FF400R17KE4EHOSA1

Infineon Technologies

IGBT MODULE 1700V 400A

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 400 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

パッケージ: -

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