Nexperia USA Inc. 製品

PMN70XPEAX

Nexperia USA Inc.

MOSFET P-CH 20V SC-74

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta), 6.25W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SC-74, SOT-457

パッケージ: SC-74, SOT-457

PZTA14,135

Nexperia USA Inc.

TRANS NPN DARL 30V 0.5A SOT223

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.25W
• Frequency - Transition: 125MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

パッケージ: TO-261-4, TO-261AA

PBSS5130QAZ

Nexperia USA Inc.

TRANS PNP 30V 1A DFN1010D-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 1A, 2V
• Power - Max: 325mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1010D-3

パッケージ: 3-XDFN Exposed Pad

BZT52-C33J

Nexperia USA Inc.

DIODE ZENER 33V 350MW SOD123

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±6.1%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 23.1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZV85-C5V6,113

Nexperia USA Inc.

DIODE ZENER 5.6V 1W DO41

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

パッケージ: DO-204AL, DO-41, Axial

PMEG050V150EPDAZ

Nexperia USA Inc.

DIODE SCHOTTKY 50V 15A CFP15

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 1mA @ 50V
• Capacitance @ Vr, F: 570pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SMD, Flat Leads
• Supplier Device Package: CFP15
• Operating Temperature - Junction: 175°C (Max)

パッケージ: 3-SMD, Flat Leads

74LVC157ADB,112

Nexperia USA Inc.

IC QUAD 2-IN MUX 16SSOP

• Type: Multiplexer
• Circuit: 4 x 2:1
• Independent Circuits: 1
• Current - Output High, Low: 24mA, 24mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 16-SSOP

パッケージ: 16-SSOP (0.209", 5.30mm Width)

74HC138D,653

Nexperia USA Inc.

IC DECODER/DEMUX 3-8 LINE 16SOIC

• Type: Decoder/Demultiplexer
• Circuit: 1 x 3:8
• Independent Circuits: 1
• Current - Output High, Low: 5.2mA, 5.2mA
• Voltage Supply Source: Single Supply
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.154", 3.90mm Width)

74LVC373ABQ-Q100X

Nexperia USA Inc.

IC TRANSP LATCH OCTAL D 20DHVQFN

• Logic Type: D-Type Transparent Latch
• Circuit: 8:8
• Output Type: Tri-State
• Voltage - Supply: 1.65 V ~ 3.6 V
• Independent Circuits: 1
• Delay Time - Propagation: 3.3ns
• Current - Output High, Low: 24mA, 24mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: 20-DHVQFN (4.5x 2.5)

パッケージ: 20-VFQFN Exposed Pad

XC7WT14GD,125

Nexperia USA Inc.

IC SCHMITT TRIG TRPL INV 8XSONU

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: Schmitt Trigger
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 0.6 V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-XSON, SOT996-2 (2x3)
• Package / Case: 8-XFDFN

パッケージ: 8-XFDFN

74AHCT30D-Q100J

Nexperia USA Inc.

IC GATE NAND 1CH 8-INP 14-SO

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 8
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

パッケージ: 14-SOIC (0.154", 3.90mm Width)

74AXP2G14GMH

Nexperia USA Inc.

IC GATE INVERTER 6XSON

• Logic Type: Inverter
• Number of Circuits: 2
• Number of Inputs: 2
• Features: Schmitt Trigger
• Voltage - Supply: 0.7 V ~ 2.75 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3.2ns @ 2.5V, 5pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 6-XSON, SOT886 (1.45x1)
• Package / Case: 6-XFDFN

パッケージ: 6-XFDFN

XC7WH14DC,125

Nexperia USA Inc.

IC SCHMITT TRIGGER INV VSSOP8

• Logic Type: Inverter
• Number of Circuits: 3
• Number of Inputs: 3
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSSOP
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: 8-VFSOP (0.091", 2.30mm Width)

74AUP1T98GS,132

Nexperia USA Inc.

IC LP CONFIG GATE V-XLATR 6XSON

• Logic Type: Configurable Multiple Function
• Number of Circuits: 1
• Number of Inputs: 3
• Schmitt Trigger Input: Yes
• Output Type: Single-Ended
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: 6-XSON, SOT1202 (1x1)

パッケージ: 6-XFDFN

74AHC377D-Q100J

Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 20SOIC

• Function: Standard
• Type: D-Type
• Output Type: Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 120MHz
• Max Propagation Delay @ V, Max CL: 10.5ns @ 5V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Iq): 4µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)

パッケージ: 20-SOIC (0.295", 7.50mm Width)

74LVT16374ADL,118

Nexperia USA Inc.

IC D-TYPE POS TRG DUAL 48SSOP

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 2
• Number of Bits per Element: 8
• Clock Frequency: 150MHz
• Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 2.7 V ~ 3.6 V
• Current - Quiescent (Iq): 120µA
• Input Capacitance: 3pF
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-BSSOP (0.295", 7.50mm Width)

パッケージ: 48-BSSOP (0.295", 7.50mm Width)

74HC4053PW,112

Nexperia USA Inc.

IC MUX/DEMUX TRIPLE 2X1 16TSSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 3
• On-State Resistance (Max): 120 Ohm
• Channel-to-Channel Matching (ΔRon): 6 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 10 V
• Voltage - Supply, Dual (V±): ±1.5 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 31ns, 29ns
• -3db Bandwidth: 170MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

PESD15VL1BA/S911X

Nexperia USA Inc.

DIODE PROTECTION SOD323

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

BZT52H-B9V1-QX

Nexperia USA Inc.

BZT52H-B9V1-Q/SOD123F/SOD2

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±1.98%
• Power - Max: 375 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

パッケージ: -

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BZX84-B8V2-QR

Nexperia USA Inc.

BZX84-B8V2-Q/SOT23/TO-236AB

• Voltage - Zener (Nom) (Vz): 8.2 V
• Tolerance: ±2%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700 nA @ 5 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

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PMEG2020EH-6X

Nexperia USA Inc.

DIODE SCHOTTKY 20V 2A SOD123F

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 525 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: 50pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: 150°C

パッケージ: -

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BAT721A-QR

Nexperia USA Inc.

DIODE ARR SCHOTT 40V TO236AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15 µA @ 30 V
• Operating Temperature - Junction: 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

RB521S30-QF

Nexperia USA Inc.

RB521S30-Q/SOD523/SC-79

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 µA @ 10 V
• Capacitance @ Vr, F: 20pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: 150°C

パッケージ: -

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PDTA114YQCZ

Nexperia USA Inc.

TRANS PREBIAS PNP 50V 0.1A 3DFN

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 180 MHz
• Power - Max: 360 mW
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1412D-3

パッケージ: -

BZX84-B62-QR

Nexperia USA Inc.

BZX84-B62-Q/SOT23/TO-236AB

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±2%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

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NXB0102GTX

Nexperia USA Inc.

IC TRANSLTR BIDIRECTIONAL 8XSON

• Translator Type: Voltage Level
• Channel Type: Bidirectional
• Number of Circuits: 1
• Channels per Circuit: 2
• Voltage - VCCA: 1.2 V ~ 3.6 V
• Voltage - VCCB: 1.65 V ~ 5.5 V
• Input Signal: -
• Output Signal: -
• Output Type: Tri-State
• Data Rate: 100Mbps
• Operating Temperature: -40°C ~ 125°C (TA)
• Features: -
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)

パッケージ: -

NHDTC143ZTR

Nexperia USA Inc.

TRANS PREBIAS NPN 80V TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA
• Frequency - Transition: 170 MHz
• Power - Max: 250 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

PMEG200G20ELR-QX

Nexperia USA Inc.

DIODE GEN PURP 200V 2A SOD123W

• Diode Type: SiGe (Silicon Germanium)
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 32 ns
• Current - Reverse Leakage @ Vr: 30 nA @ 200 V
• Capacitance @ Vr, F: 58pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 175°C

パッケージ: -