Nexperia USA Inc. 製品

BUK6E2R3-40C,127

Nexperia USA Inc.

MOSFET N-CH 40V 120A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 306W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

PBSS5320X,135

Nexperia USA Inc.

TRANS PNP 20V 3A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

BC847W,135

Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323-3

パッケージ: SC-70, SOT-323

BCX55-16,115

Nexperia USA Inc.

TRANS NPN 60V 1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 180MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

パッケージ: TO-243AA

BZX84-B10/DG/B3,23

Nexperia USA Inc.

DIODE ZENER TO-236AB

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

NZX22A,133

Nexperia USA Inc.

DIODE ZENER 22V 500MW ALF2

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 65 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

パッケージ: DO-204AH, DO-35, Axial

1N4740A,113

Nexperia USA Inc.

DIODE ZENER 10V 1W DO41

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

パッケージ: DO-204AL, DO-41, Axial

BZB84-B22,215

Nexperia USA Inc.

DIODE ZENER ARRAY 22V SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15.4V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

BAT54A,235

Nexperia USA Inc.

DIODE ARRAY SCHOTTKY 30V SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

パッケージ: TO-236-3, SC-59, SOT-23-3

HEF4528BT,653

Nexperia USA Inc.

IC MONO MULTIVBRTOR DUAL 16SOIC

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: No
• Propagation Delay: 35ns
• Current - Output High, Low: -
• Voltage - Supply: 4.5 V ~ 15.5 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

パッケージ: 16-SOIC (0.154", 3.90mm Width)

74HCT20DB,118

Nexperia USA Inc.

IC GATE NAND 2CH 4-INP 14-SSOP

• Logic Type: NAND Gate
• Number of Circuits: 2
• Number of Inputs: 4
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SSOP
• Package / Case: 14-SSOP (0.209", 5.30mm Width)

パッケージ: 14-SSOP (0.209", 5.30mm Width)

74ALVC541BQ-Q100X

Nexperia USA Inc.

IC BUFF/DVR TRI-ST 8BIT

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: 20-DHVQFN (4.5x 2.5)

パッケージ: 20-VFQFN Exposed Pad

74AUP2G240GS,115

Nexperia USA Inc.

IC BUFFER/LINEDVR DUAL 8XSON

• Logic Type: Buffer, Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-XFDFN
• Supplier Device Package: 8-XSON, SOT1203 (1.35x1)

パッケージ: 8-XFDFN

74LVT125BQ,115

Nexperia USA Inc.

IC BUFF TRI-ST QD N-INV 14DHVQFN

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 64mA
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-VFQFN Exposed Pad
• Supplier Device Package: 14-DHVQFN (2.5x3)

パッケージ: 14-VFQFN Exposed Pad

PESD5V0F1BSHYL

Nexperia USA Inc.

PESD5V0F1BSH/SOD992/DSN0402-2

• Type: -
• Unidirectional Channels: -
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): -
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: -
• Applications: -
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

パッケージ: -

MMBZ12VDL,215

Nexperia USA Inc.

TVS DIODE 8.5VWM 17VC SOT23

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 8.5V (Max)
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 2.35A
• Power - Peak Pulse: 40W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 110pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23 (TO-236AB)

パッケージ: TO-236-3, SC-59, SOT-23-3

BCX56-16TX

Nexperia USA Inc.

TRANS NPN 80V 1A SOT89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 500 mW
• Frequency - Transition: 155MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

パッケージ: -

BZX84W-B62F

Nexperia USA Inc.

DIODE ZENER 62V 275MW SOT323

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±2%
• Power - Max: 275 mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 43.4 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: -

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ES1DVRX

Nexperia USA Inc.

DIODE GEN PURP 200V 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 200 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 150°C (Max)

パッケージ: -

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PNE20020AER-QX

Nexperia USA Inc.

HYPERFAST/ULTRAFAST RECOVERY REC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 21pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 175°C

パッケージ: -

PZU10B2A-QX

Nexperia USA Inc.

DIODE ZENER 10V 320MW SOD323

• Voltage - Zener (Nom) (Vz): 9.99 V
• Tolerance: ±2%
• Power - Max: 320 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 µA @ 7 V
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

パッケージ: -

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RB751V40-QX

Nexperia USA Inc.

RB751V40-Q/SOD323/SOD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 120mA
• Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 nA @ 30 V
• Capacitance @ Vr, F: 2pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 150°C

パッケージ: -

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BZT52H-A3V0X

Nexperia USA Inc.

BZT52H-A3V0/SOD123F/SOD2

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±1%
• Power - Max: 375 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

パッケージ: -

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PMEG040V030EPE-QZ

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A CFP15B

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 12 ns
• Current - Reverse Leakage @ Vr: 120 µA @ 40 V
• Capacitance @ Vr, F: 370pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: CFP15B
• Operating Temperature - Junction: 175°C

パッケージ: -

NXV65UPR

Nexperia USA Inc.

NXV65UP/SOT23/TO-236AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
• Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB
• Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -

BZT52-B3V0X

Nexperia USA Inc.

DIODE ZENER 3V 590MW SOD123

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±2%
• Power - Max: 590 mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: -

BAT54C-QVL

Nexperia USA Inc.

DIODE ARR SCHOTT 30V TO236AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

パッケージ: -

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BC846BPN-QX

Nexperia USA Inc.

TRANS NPN/PNP 65V 0.1A 6TSSOP

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

パッケージ: -

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