ページ 41 - Taiwan Semiconductor Corporation 製品

部品番号	メーカ	説明	パッケージ	在庫
BZD27C62PHR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 62V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 62V Tolerance: ±6.45% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 47V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫2,624
TSZU52C4V7 RGG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.7V, 150MW, 5%, 0 Voltage - Zener (Nom) (Vz): 4.7V Tolerance: ±5% Power - Max: 150mW Impedance (Max) (Zzt): 78 Ohms Current - Reverse Leakage @ Vr: 5µA @ 2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: 0603	パッケージ: 0201 (0603 Metric)	在庫3,200
BZX585B4V3 RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.3V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 4.3V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 2.7µA @ 1V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	パッケージ: SC-79, SOD-523	在庫2,816
BZT52C30K RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 30V, 200MW, 5%, SO Voltage - Zener (Nom) (Vz): 30V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100nA @ 23V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	パッケージ: SC-79, SOD-523	在庫6,720
BZT52B47S RRG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 200MW, 2%, SO Voltage - Zener (Nom) (Vz): 47V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 170 Ohms Current - Reverse Leakage @ Vr: 45nA @ 33V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	パッケージ: SC-90, SOD-323F	在庫7,584
BZT52B33 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 33V, 500MW, 2%, SO Voltage - Zener (Nom) (Vz): 33V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 45nA @ 23V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫2,960
BZV55B2V7 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 500MW, 2%, M Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 10µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫4,672
BZV55C2V4 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.4V, 500MW, 5%, M Voltage - Zener (Nom) (Vz): 2.4V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	パッケージ: DO-213AC, MINI-MELF, SOD-80	在庫3,184
BZD27C51P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 51V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 1µA @ 39V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	パッケージ: DO-219AB	在庫6,944
BZT52C15 RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 15V, 500MW, 5%, SO Voltage - Zener (Nom) (Vz): 15V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 45nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: SOD-123F	在庫4,032
GBU607 D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	パッケージ: 4-SIP, GBU	在庫3,616
MTZJ24SA	Taiwan Semiconductor Corporation	DO-34, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 22.62 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 35 Ohms Current - Reverse Leakage @ Vr: 200 nA @ 19 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	パッケージ: -	Request a Quote
MBR20L120CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 120V 20A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 120 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	在庫3,000
BZS55C16	Taiwan Semiconductor Corporation	1206 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	パッケージ: -	Request a Quote
HS1JAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫18,435
HS2GFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫18,090
TS50P07GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 50A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	パッケージ: -	在庫3,546
HERF1005GH	Taiwan Semiconductor Corporation	DIODE ARRAY GP 400V 10A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	パッケージ: -	在庫3,000
TST10H200CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 5A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 910 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
TSM60NC390CI-C0G	Taiwan Semiconductor Corporation	600V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	パッケージ: -	在庫11,865
BAT54SD-RF	Taiwan Semiconductor Corporation	SOT-363, 30V, 0.2A, SCHOTTKY DIO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363 Operating Temperature - Junction: -65°C ~ 150°C	パッケージ: -	Request a Quote
PU2DMH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	パッケージ: -	在庫16,944
ZM4731A	Taiwan Semiconductor Corporation	MELF, 1000MW, 5%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 4.3 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 9 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF	パッケージ: -	Request a Quote
MBR25150CT-Y	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 150V 25A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	パッケージ: -	Request a Quote
MMSZ4698-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 11 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	パッケージ: -	Request a Quote
BA158GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	在庫30,000
SF43G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	パッケージ: -	Request a Quote
BZT52C56	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 56 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 39.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	パッケージ: -	Request a Quote