Taiwan Semiconductor Corporation 製品

2M160ZHB0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 2000MW, %, A

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 650 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

1N4749AHB0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

パッケージ: DO-204AL, DO-41, Axial

1SMA5947 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 62.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZX584B5V6 RKG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 150MW, 2%, S

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

パッケージ: SC-79, SOD-523

1SMA4749 M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZX584B8V2 RSG

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 150MW, 2%, S

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

パッケージ: SC-79, SOD-523

BZT52C11S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 200MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 90nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

パッケージ: SC-90, SOD-323F

BZT55C18 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 500MW, 5%, QM

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

パッケージ: SOD-80 Variant

MTZJ3V3SB R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3.43V, 500MW, %, D

• Voltage - Zener (Nom) (Vz): 3.43V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

パッケージ: DO-204AG, DO-34, Axial

MTZJ39SC R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 36.93V, 500MW, %,

• Voltage - Zener (Nom) (Vz): 36.93V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Supplier Device Package: DO-34

パッケージ: DO-204AG, DO-34, Axial

BZT55C8V2 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 500MW, 5%, Q

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: Mini MELF

パッケージ: SOD-80 Variant

TS6P05GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

パッケージ: 4-SIP, TS-6P

BZV55B9V1

Taiwan Semiconductor Corporation

MMELF, 500MW, 2%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

パッケージ: -

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BZD27C82PH

Taiwan Semiconductor Corporation

SUB SMA, 1000MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 82 V
• Tolerance: ±6.1%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 62 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

パッケージ: -

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S12JCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

ZM4733A

Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF

パッケージ: -

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MBRF2545CT-Y

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 45V 25A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

パッケージ: -

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TUAU6JH-M3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 6A SMPC4.6U

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 64pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

TSM060N03PQ33

Taiwan Semiconductor Corporation

30V, 62A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1342 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3.1x3.1)
• Package / Case: 8-PowerWDFN

パッケージ: -

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BZY55C5V6

Taiwan Semiconductor Corporation

0805 (CERAMICS), 500MW, 5%, SMAL

• Voltage - Zener (Nom) (Vz): 5.6 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

パッケージ: -

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RS2DFL

Taiwan Semiconductor Corporation

150NS, 2A, 200V, FAST RECOVERY R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

MUR420S-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

パッケージ: -

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TSP15H150S

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 15A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 150 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

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S1KF-T

Taiwan Semiconductor Corporation

1A, 800V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

1T4G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A TS-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: TS-1
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: -

TSM4800N15CX6-RFG

Taiwan Semiconductor Corporation

MOSFET N-CH 150V 1.4A SOT26

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Tc)
• Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-26
• Package / Case: SOT-23-6

パッケージ: -

1PGSMB5928H

Taiwan Semiconductor Corporation

DIODE ZENER 13V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

パッケージ: -

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MBRAD10100DH

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V THINDPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: ThinDPAK

パッケージ: -