ページ 140 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TPC8A05-H(TE12L,QM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 10A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	パッケージ: 8-SOIC (0.173", 4.40mm Width)	在庫6,752
TK14N65W,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫5,536
TPH3R203NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 47A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 23.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫45,504
2SC2482(T6TOJS,F,M	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 900mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫7,136
2SA1020-Y(ND1,AF)	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,056
2SC6026CTGRTPL3	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.1A CST3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫6,480
RN1416,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.2W S-MINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫4,896
HN1B04FE-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A ES6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: SOT-563, SOT-666	在庫34,614
1SS397TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 100MA SC70 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max)	パッケージ: SC-70, SOT-323	在庫4,080
TA78DS08BP(DNSO,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,680
TA76431AS(T6SOY,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 100MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫6,480
TCR2LF18,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.62V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫27,624
TB6819AFG,C,EL	Toshiba Semiconductor and Storage	IC PFC CTRLR CCM 8SOP Mode: Critical Conduction (CRM) Frequency - Switching: 20Khz ~ 150kHz Current - Startup: 72.5µA Voltage - Supply: 10 V ~ 25 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.173", 4.40mm Width)	在庫3,600
TC74VHC165FTELM	Toshiba Semiconductor and Storage	IC REG SHIFT PISO 8BIT 16TSSOP Logic Type: Shift Register Output Type: Complementary Number of Elements: 1 Number of Bits per Element: 8 Function: Parallel or Serial to Serial Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫6,880
TC74ACT02P	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14-DIP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Supplier Device Package: 14-DIP Package / Case: 14-DIP (0.300", 7.62mm)	パッケージ: 14-DIP (0.300", 7.62mm)	在庫4,176
TC74VHC14FK(EL,K)	Toshiba Semiconductor and Storage	IC INV HEX SCHMITT TRIG 14VSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.9 V ~ 1.65 V Logic Level - High: 2.2 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-VSSOP, US14 Package / Case: 14-VFSOP (0.118", 3.00mm Width)	パッケージ: 14-VFSOP (0.118", 3.00mm Width)	在庫21,096
74VHC4053AFT	Toshiba Semiconductor and Storage	IC MUX/DEMUX TRIPLE 2X1 16TSSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 37 Ohm Channel-to-Channel Matching (ΔRon): 5 Ohm Voltage - Supply, Single (V+): 2 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 12ns, 12ns -3db Bandwidth: 280MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 0.5pF, 8.2pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -45dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOPB	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫138,120
TMP86FS49BUG(C,JZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 60KB FLASH 64LQFP Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: I2C, SIO, UART/USART Peripherals: LED, PWM, WDT Number of I/O: 56 Program Memory Size: 60KB (60K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	パッケージ: 64-LQFP	在庫5,104
DF5A6.2LJE,LM	Toshiba Semiconductor and Storage	TVS DIODE 5VWM ESV Type: Zener Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 5.9V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: SOT-553	在庫6,462
TLP3109(TP,F	Toshiba Semiconductor and Storage	IC PHOTORELAY MOSFET 6-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 70 mOhm Load Current: 2A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 100 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	パッケージ: 6-SOP (0.173", 4.40mm)	在庫7,884
TLP785(F)	Toshiba Semiconductor and Storage	OPTOISOLATR 5KV TRANSISTOR 4-DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	パッケージ: 4-DIP (0.300", 7.62mm)	在庫21,486
TMPM036FWFG(KY,JZ)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 20MHz Connectivity: I²C, SIO, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 85 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x12b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	パッケージ: 100-LQFP	在庫9,984
TCR2LF115,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.15V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫3,504
7UL1G17FU-LF	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 3.6V USV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: Schmitt Trigger Output Type: - Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	パッケージ: -	在庫44,994
TK2P60D-TE16L1-NV	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2A PW-MOLD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
7UL2T32FK-LF-B	Toshiba Semiconductor and Storage	L-MOS LVP IC VCC: 2.3V-3.6V, SOT Logic Type: OR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.35V ~ 0.5V Logic Level - High: 1.1V ~ 1.2V Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	パッケージ: -	Request a Quote
SSM3J15F-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 100MA S-MINI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	パッケージ: -	在庫23,637
TW107N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 107MO FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: -	在庫240

TPC8A05-H(TE12L,QM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 10A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

パッケージ: 8-SOIC (0.173", 4.40mm Width)

在庫6,752

TK14N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫5,536

TPH3R203NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 47A 8-SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 23.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫45,504

2SC2482(T6TOJS,F,M

Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
Power - Max: 900mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫7,136

2SA1020-Y(ND1,AF)

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,056

2SC6026CTGRTPL3

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.1A CST3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫6,480

RN1416,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫4,896

HN1B04FE-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: SOT-563, SOT-666

在庫34,614

1SS397TE85LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 100MA SC70

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-70, SOT-323

在庫4,080

TA78DS08BP(DNSO,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,680

TA76431AS(T6SOY,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 100mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫6,480

TCR2LF18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.62V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫27,624

TB6819AFG,C,EL

Toshiba Semiconductor and Storage

IC PFC CTRLR CCM 8SOP

Mode: Critical Conduction (CRM)
Frequency - Switching: 20Khz ~ 150kHz
Current - Startup: 72.5µA
Voltage - Supply: 10 V ~ 25 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.173", 4.40mm Width)

在庫3,600

TC74VHC165FTELM

Toshiba Semiconductor and Storage

IC REG SHIFT PISO 8BIT 16TSSOP

Logic Type: Shift Register
Output Type: Complementary
Number of Elements: 1
Number of Bits per Element: 8
Function: Parallel or Serial to Serial
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫6,880

TC74ACT02P

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-DIP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Supplier Device Package: 14-DIP
Package / Case: 14-DIP (0.300", 7.62mm)

パッケージ: 14-DIP (0.300", 7.62mm)

在庫4,176

TC74VHC14FK(EL,K)

Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14VSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.9 V ~ 1.65 V
Logic Level - High: 2.2 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-VSSOP, US14
Package / Case: 14-VFSOP (0.118", 3.00mm Width)

パッケージ: 14-VFSOP (0.118", 3.00mm Width)

在庫21,096

74VHC4053AFT

Toshiba Semiconductor and Storage

IC MUX/DEMUX TRIPLE 2X1 16TSSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 37 Ohm
Channel-to-Channel Matching (ΔRon): 5 Ohm
Voltage - Supply, Single (V+): 2 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 12ns, 12ns
-3db Bandwidth: 280MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 0.5pF, 8.2pF
Current - Leakage (IS(off)) (Max): 100nA
Crosstalk: -45dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOPB

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫138,120

TMP86FS49BUG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 60KB FLASH 64LQFP

Core Processor: 870/C
Core Size: 8-Bit
Speed: 16MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: LED, PWM, WDT
Number of I/O: 56
Program Memory Size: 60KB (60K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 2K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

パッケージ: 64-LQFP

在庫5,104

DF5A6.2LJE,LM

Toshiba Semiconductor and Storage

TVS DIODE 5VWM ESV

Type: Zener
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: SOT-553

在庫6,462

TLP3109(TP,F

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 6-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 70 mOhm
Load Current: 2A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 100 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

パッケージ: 6-SOP (0.173", 4.40mm)

在庫7,884

TLP785(F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

パッケージ: 4-DIP (0.300", 7.62mm)

在庫21,486

TMPM036FWFG(KY,JZ)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 20MHz
Connectivity: I²C, SIO, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 85
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 8x12b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

パッケージ: 100-LQFP

在庫9,984

TCR2LF115,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.15V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫3,504

7UL1G17FU-LF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: Schmitt Trigger
Output Type: -
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

パッケージ: -

在庫44,994

TK2P60D-TE16L1-NV

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: PW-MOLD
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

Request a Quote

7UL2T32FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

Logic Type: OR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.35V ~ 0.5V
Logic Level - High: 1.1V ~ 1.2V
Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

パッケージ: -

Request a Quote

SSM3J15F-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA S-MINI

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

パッケージ: -

在庫23,637

TW107N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 107MO

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: -

在庫240