ページ 143 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TK10V60W,LVQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 9.7A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 88.3W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	パッケージ: 4-VSFN Exposed Pad	在庫3,728
2SC4793,HFEF(M	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫7,440
2SC2655-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,312
2SA1931,NIKKIQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫5,488
2SA1244-Y(Q)	Toshiba Semiconductor and Storage	TRANS PNP 50V 5A PW-MOLD Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 1W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫6,048
RN2105CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.05W CST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫4,016
RN1115,LF(CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫2,960
CRZ11(TE85L,Q)	Toshiba Semiconductor and Storage	DIODE ZENER 11V 700MW SFLAT Voltage - Zener (Nom) (Vz): 11V Tolerance: ±10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10µA @ 7V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	パッケージ: SOD-123F	在庫7,392
TBAT54A,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SOT23 Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	パッケージ: TO-236-3, SC-59, SOT-23-3	在庫106,074
TA78DS08BP(T6ND,FM	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫2,416
TA78DS05BP,T6F(J	Toshiba Semiconductor and Storage	IC REG LINEAR 30MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,936
TA4809BF(T6L1,NQ)	Toshiba Semiconductor and Storage	IC REG LINEAR 9V 1A PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 9V Voltage - Output (Max): - Voltage Dropout (Max): 0.69V @ 1A (Typ) Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 1.7mA ~ 20mA PSRR: 55dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63	在庫7,568
TB6641FG,8,EL	Toshiba Semiconductor and Storage	IC DC MOTOR DRVR PAR 16HSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel, PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 45 V Voltage - Load: 10 V ~ 45 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Supplier Device Package: 16-SOP	パッケージ: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs	在庫5,376
TB62269FTG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1 ~ 1/32 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	パッケージ: 48-WFQFN Exposed Pad	在庫5,808
TB62216FG,C,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 28HSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs Supplier Device Package: 28-HSOP	パッケージ: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs	在庫18,180
TC7S08FU,LF	Toshiba Semiconductor and Storage	IC GATE AND 1CH 2-INP USV Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 2.6mA, 2.6mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫7,056
DF2B6.8FS(TPL3,T)	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 8.5VC FSC Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	パッケージ: 2-SMD, Flat Lead	在庫2,124
TLP3122(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 1A 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 250 mOhm Load Current: 1A Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	パッケージ: 4-SOP (0.173", 4.40mm)	在庫20,484
TLP184(GB,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 9µs, 9µs Rise / Fall Time (Typ): 5µs, 9µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads Supplier Device Package: 6-SO	パッケージ: 6-SOIC (0.173", 4.40mm Width) 4 Leads	在庫4,446
TLP5754(D4,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRVR SO6L Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	パッケージ: 6-SOIC (0.295", 7.50mm Width)	在庫7,326
TMPM366FYFG	Toshiba Semiconductor and Storage	INTEGRATED CIRCUIT MICROCONTROLL Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,504
74VHCV574FT	Toshiba Semiconductor and Storage	X34 OCTAL SCHMITT D-TYPE FLIP-FL Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 135MHz Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 16mA, 16mA Voltage - Supply: 1.8V ~ 5.5V Current - Quiescent (Iq): 2µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	パッケージ: 20-TSSOP (0.173", 4.40mm Width)	在庫43,158
TCR2LN31,LF	Toshiba Semiconductor and Storage	200MA LDO VOUT=3.1V DROPOUT=200M Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.1V Voltage - Output (Max): - Voltage Dropout (Max): 0.28V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: 4-XFDFN Exposed Pad	在庫98,100
TRS6V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 6A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 70 µA @ 650 V Capacitance @ Vr, F: 392pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	パッケージ: -	在庫14,829
RN4910-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫9,000
TB67S539FTG-O-EL	Toshiba Semiconductor and Storage	40V/2A 32 MICRO-STEP STEPPING MO Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM Technology: NMOS Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32 Applications: General Purpose Current - Output: 2A Voltage - Supply: 6V Voltage - Load: 4.5V ~ 34V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	パッケージ: -	在庫4,158
TC7USB40MU-LF-S2E	Toshiba Semiconductor and Storage	IC USB SWITCH SPDT DUAL 10UQFN Applications: USB Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Number of Channels: 2 On-State Resistance (Max): 14Ohm Voltage - Supply, Single (V+): 2.3V ~ 4.3V Voltage - Supply, Dual (V±): - -3db Bandwidth: 1.5GHz Features: USB 2.0 Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-UFQFN Supplier Device Package: 10-UQFN (1.8x1.4)	パッケージ: -	在庫98,022
TCR2EN125-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.25V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.25V Voltage - Output (Max): - Voltage Dropout (Max): 0.55V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	パッケージ: -	在庫30,000

TK10V60W,LVQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9.7A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 88.3W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

パッケージ: 4-VSFN Exposed Pad

在庫3,728

2SC4793,HFEF(M

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫7,440

2SC2655-Y(T6CN,A,F

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,312

2SA1931,NIKKIQ(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫5,488

2SA1244-Y(Q)

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A PW-MOLD

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫6,048

RN2105CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.05W CST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫4,016

RN1115,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫2,960

CRZ11(TE85L,Q)

Toshiba Semiconductor and Storage

DIODE ZENER 11V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±10%
Power - Max: 700mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 7V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

パッケージ: SOD-123F

在庫7,392

TBAT54A,LM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SOT23

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

在庫106,074

TA78DS08BP(T6ND,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫2,416

TA78DS05BP,T6F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,936

TA4809BF(T6L1,NQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 9V 1A PW-MOLD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 16V
Voltage - Output (Min/Fixed): 9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.69V @ 1A (Typ)
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 1.7mA ~ 20mA
PSRR: 55dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63

在庫7,568

TB6641FG,8,EL

Toshiba Semiconductor and Storage

IC DC MOTOR DRVR PAR 16HSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel, PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 45 V
Voltage - Load: 10 V ~ 45 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Supplier Device Package: 16-SOP

パッケージ: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

在庫5,376

TB62269FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1 ~ 1/32
Applications: General Purpose
Current - Output: 1.8A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

パッケージ: 48-WFQFN Exposed Pad

在庫5,808

TB62216FG,C,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
Supplier Device Package: 28-HSOP

パッケージ: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

在庫18,180

TC7S08FU,LF

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP USV

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 2.6mA, 2.6mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫7,056

DF2B6.8FS(TPL3,T)

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 8.5VC FSC

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC

パッケージ: 2-SMD, Flat Lead

在庫2,124

TLP3122(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 1A 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 250 mOhm
Load Current: 1A
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

パッケージ: 4-SOP (0.173", 4.40mm)

在庫20,484

TLP184(GB,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 9µs, 9µs
Rise / Fall Time (Typ): 5µs, 9µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
Supplier Device Package: 6-SO

パッケージ: 6-SOIC (0.173", 4.40mm Width) 4 Leads

在庫4,446

TLP5754(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 3A, 3A
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO
Approvals: CQC, CSA, cUL, UL, VDE

パッケージ: 6-SOIC (0.295", 7.50mm Width)

在庫7,326

TMPM366FYFG

Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,504

74VHCV574FT

Toshiba Semiconductor and Storage

X34 OCTAL SCHMITT D-TYPE FLIP-FL

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 135MHz
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 16mA, 16mA
Voltage - Supply: 1.8V ~ 5.5V
Current - Quiescent (Iq): 2µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

パッケージ: 20-TSSOP (0.173", 4.40mm Width)

在庫43,158

TCR2LN31,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=3.1V DROPOUT=200M

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.1V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.28V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: 4-XFDFN Exposed Pad

在庫98,100

TRS6V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 6A DFN8X8

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C

パッケージ: -

在庫14,829

RN4910-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫9,000

TB67S539FTG-O-EL

Toshiba Semiconductor and Storage

40V/2A 32 MICRO-STEP STEPPING MO

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM
Technology: NMOS
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 6V
Voltage - Load: 4.5V ~ 34V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: 32-VQFN (5x5)

パッケージ: -

在庫4,158

TC7USB40MU-LF-S2E

Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 10UQFN

Applications: USB
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Channels: 2
On-State Resistance (Max): 14Ohm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Voltage - Supply, Dual (V±): -
-3db Bandwidth: 1.5GHz
Features: USB 2.0
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-UFQFN
Supplier Device Package: 10-UQFN (1.8x1.4)

パッケージ: -

在庫98,022

TCR2EN125-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.25V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.55V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

パッケージ: -

在庫30,000