ページ 83 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TK28N65W,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 27.6A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.6mA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫6,660
RN4910(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫6,432
CCS15F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25µA @ 40V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 150°C (Max)	パッケージ: 2-SMD, No Lead	在庫96,660
1SS272TE85LF	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA SC61B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SC-61B	パッケージ: SC-61AA	在庫4,560
TA76L431S(T6SOY,QM	Toshiba Semiconductor and Storage	IC REG LINEAR 0.5MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 0.5mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫5,744
TA58L12S(FJTN,AQ)	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	パッケージ: TO-220-3 Full Pack	在庫5,568
TA58L05S(FJTN,QM)	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA 3HSIP Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: 3-HSIP	パッケージ: TO-220-3 Full Pack	在庫6,320
TCK22922G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 25 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	パッケージ: 6-UFBGA, WLCSP	在庫50,424
TC7USB221FT(EL,M)	Toshiba Semiconductor and Storage	IC USB SWITCH SPDT DUAL 14-TSSOP Type: Multiplexer/Demultiplexer Circuit: 2 x 1:2 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	パッケージ: 14-TSSOP (0.173", 4.40mm Width)	在庫16,266
TC7SZ07FU,LJ(CT	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 5.5V USV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Open Drain Current - Output High, Low: -, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫7,632
TC74LCX541FK(EL,K)	Toshiba Semiconductor and Storage	IC BUFF/DVR 8BIT LOW V 20VSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 20-VSSOP	パッケージ: 20-VFSOP (0.118", 3.00mm Width)	在庫23,304
TC7SZ34F,LJ(CT	Toshiba Semiconductor and Storage	IC BUFFER UHS SGL SMV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫27,894
TL2FL-NW0,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 26 lm (23 lm ~ 29 lm) Current - Test: 65mA Voltage - Forward (Vf) (Typ): 2.82V Lumens/Watt @ Current - Test: 136 lm/W CRI (Color Rendering Index): 70 Current - Max: 100mA Viewing Angle: - Mounting Type: Surface Mount Package / Case: 1206 (3014 Metric) Supplier Device Package: 3014 Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm) Height - Seated (Max): 0.030" (0.77mm)	パッケージ: 1206 (3014 Metric)	在庫2,016
LTA085C184F	Toshiba Semiconductor and Storage	LCD 8.5INCH 800X480 WVGA TOUCH Display Type: TFT - Color Display Mode: Transmissive Touchscreen: Resistive Diagonal Screen Size: 8.5" (215.90mm) Viewing Area: 184.80mm W x 110.88mm H Backlight: CCFL Dot Pixels: 800 x 480 (WVGA) Interface: Parallel, 18-Bit (RGB) Graphics Color: Red, Green, Blue (RGB) Background Color: -	パッケージ: -	在庫4,608
TC35678FSG-002	Toshiba Semiconductor and Storage	V4.2 BLUETOOTH SMART IC IMPLEMEN Type: TxRx + MCU RF Family/Standard: Bluetooth Protocol: Bluetooth v4.2 Modulation: GFSK Frequency: 2.4GHz Data Rate (Max): - Power - Output: 0dBm Sensitivity: -93dBm Memory Size: 256kB Flash, 384kB ROM, 192kB RAM Serial Interfaces: I2C, SPI GPIO: 17 Voltage - Supply: 2 V ~ 3.6 V Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Operating Temperature: -40°C ~ 85°C Package / Case: 60-VFQFN Exposed Pad	パッケージ: 60-VFQFN Exposed Pad	在庫6,120
TLP748J(TP1,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 4KV SCR 6SMD Output Type: SCR Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 4000Vrms Voltage - Off State: 600V Static dV/dt (Min): 5V/µs Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 150mA Current - Hold (Ih): 1mA Turn On Time: 15µs Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SMD, Gull Wing Supplier Device Package: 6-SMD Approvals: BSI, SEMKO, UR	パッケージ: 6-SMD, Gull Wing	在庫112,800
TLP290(BL-TP,SE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	パッケージ: 4-SOIC (0.179", 4.55mm)	在庫25,944
TLP2366(TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PSH PULL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	パッケージ: 6-SOIC (0.179", 4.55mm Width) 5 Leads	在庫7,362
TMPM368FDFG	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 80MHz Connectivity: CANbus, EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART, USB Peripherals: DMA, LVD, POR, WDT Number of I/O: 59 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x12b, D/A 2x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	パッケージ: 100-LQFP	在庫11,400
7UL1T02FU,LF	Toshiba Semiconductor and Storage	L-MOS LVP SERIES GATE NOR VCC:2. Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 0.4V Logic Level - High: 2.2V ~ 2.48V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫45,690
TCR15AG12,LF	Toshiba Semiconductor and Storage	1500MA LDO VOUT1.2V DROPOUT120MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,552
RN1114-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: -	在庫8,910
TK5P60W5-RVQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	在庫6,000
TK125V65Z-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 24A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.02mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	パッケージ: -	在庫15,000
TCK423G-L3F	Toshiba Semiconductor and Storage	LOAD SWITCH (GATE DRIVER) IC WCS Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 2.7V ~ 28V Logic Voltage - VIL, VIH: 0.4V, 1.2V Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WCSPG (0.8x1.2)	パッケージ: -	在庫29,859
TRS8V65H-LQ	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 8A DFN8X8 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Capacitance @ Vr, F: 520pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C	パッケージ: -	在庫13,500
TPC8227-H-LQ	Toshiba Semiconductor and Storage	MOSFET 2N-CH 40V 5.1A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: -	Request a Quote
TW070J120B-S1Q	Toshiba Semiconductor and Storage	SICFET N-CH 1200V 36A TO3P FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5.8V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V Vgs (Max): ±25V, -10V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	パッケージ: -	在庫189

TK28N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫6,660

RN4910(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫6,432

CCS15F40,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A CST2C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 640mV @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25µA @ 40V
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2C
Operating Temperature - Junction: 150°C (Max)

パッケージ: 2-SMD, No Lead

在庫96,660

1SS272TE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC61B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SC-61B

パッケージ: SC-61AA

在庫4,560

TA76L431S(T6SOY,QM

Toshiba Semiconductor and Storage

IC REG LINEAR 0.5MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 0.5mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫5,744

TA58L12S(FJTN,AQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

パッケージ: TO-220-3 Full Pack

在庫5,568

TA58L05S(FJTN,QM)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: 3-HSIP

パッケージ: TO-220-3 Full Pack

在庫6,320

TCK22922G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 25 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

パッケージ: 6-UFBGA, WLCSP

在庫50,424

TC7USB221FT(EL,M)

Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 14-TSSOP

Type: Multiplexer/Demultiplexer
Circuit: 2 x 1:2
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

パッケージ: 14-TSSOP (0.173", 4.40mm Width)

在庫16,266

TC7SZ07FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V USV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Open Drain
Current - Output High, Low: -, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫7,632

TC74LCX541FK(EL,K)

Toshiba Semiconductor and Storage

IC BUFF/DVR 8BIT LOW V 20VSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Supplier Device Package: 20-VSSOP

パッケージ: 20-VFSOP (0.118", 3.00mm Width)

在庫23,304

TC7SZ34F,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER UHS SGL SMV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫27,894

TL2FL-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 26 lm (23 lm ~ 29 lm)
Current - Test: 65mA
Voltage - Forward (Vf) (Typ): 2.82V
Lumens/Watt @ Current - Test: 136 lm/W
CRI (Color Rendering Index): 70
Current - Max: 100mA
Viewing Angle: -
Mounting Type: Surface Mount
Package / Case: 1206 (3014 Metric)
Supplier Device Package: 3014
Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
Height - Seated (Max): 0.030" (0.77mm)

パッケージ: 1206 (3014 Metric)

在庫2,016

LTA085C184F

Toshiba Semiconductor and Storage

LCD 8.5INCH 800X480 WVGA TOUCH

Display Type: TFT - Color
Display Mode: Transmissive
Touchscreen: Resistive
Diagonal Screen Size: 8.5" (215.90mm)
Viewing Area: 184.80mm W x 110.88mm H
Backlight: CCFL
Dot Pixels: 800 x 480 (WVGA)
Interface: Parallel, 18-Bit (RGB)
Graphics Color: Red, Green, Blue (RGB)
Background Color: -

パッケージ: -

在庫4,608

TC35678FSG-002

Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

Type: TxRx + MCU
RF Family/Standard: Bluetooth
Protocol: Bluetooth v4.2
Modulation: GFSK
Frequency: 2.4GHz
Data Rate (Max): -
Power - Output: 0dBm
Sensitivity: -93dBm
Memory Size: 256kB Flash, 384kB ROM, 192kB RAM
Serial Interfaces: I2C, SPI
GPIO: 17
Voltage - Supply: 2 V ~ 3.6 V
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Operating Temperature: -40°C ~ 85°C
Package / Case: 60-VFQFN Exposed Pad

パッケージ: 60-VFQFN Exposed Pad

在庫6,120

TLP748J(TP1,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 4KV SCR 6SMD

Output Type: SCR
Zero Crossing Circuit: No
Number of Channels: 1
Voltage - Isolation: 4000Vrms
Voltage - Off State: 600V
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Current - On State (It (RMS)) (Max): 150mA
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Gull Wing
Supplier Device Package: 6-SMD
Approvals: BSI, SEMKO, UR

パッケージ: 6-SMD, Gull Wing

在庫112,800

TLP290(BL-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

パッケージ: 4-SOIC (0.179", 4.55mm)

在庫25,944

TLP2366(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.61V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

パッケージ: 6-SOIC (0.179", 4.55mm Width) 5 Leads

在庫7,362

TMPM368FDFG

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 80MHz
Connectivity: CANbus, EBI/EMI, I²C, IrDA, Microwire, SIO, SPI, SSI, SSP, UART/USART, USB
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 59
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 8x12b, D/A 2x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

パッケージ: 100-LQFP

在庫11,400

7UL1T02FU,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES GATE NOR VCC:2.

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 0.4V
Logic Level - High: 2.2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫45,690

TCR15AG12,LF

Toshiba Semiconductor and Storage

1500MA LDO VOUT1.2V DROPOUT120MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,552

RN1114-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: -

在庫8,910

TK5P60W5-RVQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

在庫6,000

TK125V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 4-DFN-EP (8x8)
Package / Case: 4-VSFN Exposed Pad

パッケージ: -

在庫15,000

TCK423G-L3F

Toshiba Semiconductor and Storage

LOAD SWITCH (GATE DRIVER) IC WCS

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 2.7V ~ 28V
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WCSPG (0.8x1.2)

パッケージ: -

在庫29,859

TRS8V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 8A DFN8X8

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C

パッケージ: -

在庫13,500

TPC8227-H-LQ

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: -

Request a Quote

TW070J120B-S1Q

Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
Vgs (Max): ±25V, -10V
FET Feature: -
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

パッケージ: -

在庫189