ページ 85 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
2SK2145-GR(TE85L,F	Toshiba Semiconductor and Storage	MOSFET 2N-CH JFET 50V SMV FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	パッケージ: SC-74A, SOT-753	在庫5,040
TPN5900CNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 9A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫3,760
TK6A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 6A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫22,194
SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	パッケージ: SOT-563, SOT-666	在庫32,976
2SA1954-A(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PNP 12V 0.5A USM Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 100mW Frequency - Transition: 130MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫3,424
RN2310(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	パッケージ: SC-70, SOT-323	在庫5,984
RN2705JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ESV Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: SOT-553	在庫3,232
RN4603(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.3W SM6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz, 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	パッケージ: SC-74, SOT-457	在庫600,000
RN4984(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫2,256
RN4982,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫21,600
TCK106AF,LF	Toshiba Semiconductor and Storage	IC POWER DIST LOAD SWITCH SMV Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 63 mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SC-74A, SOT-753 Supplier Device Package: 5-SMV, SOT-25, SC-74A	パッケージ: SC-74A, SOT-753	在庫4,304
TBD62083AFWG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 8CH 0.5A 18SOP Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): - Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOP	パッケージ: 18-SOIC (0.295", 7.50mm Width)	在庫118,542
TB6641FTG,8,EL	Toshiba Semiconductor and Storage	IC DC MOTOR DRVR PAR 32VQFN Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel, PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 45 V Voltage - Load: 10 V ~ 45 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	パッケージ: 32-VFQFN Exposed Pad	在庫3,040
74HC165D(BJ)	Toshiba Semiconductor and Storage	IC 8BIT SHIFT REGISTER 16SOIC Logic Type: Shift Register Output Type: Complementary Number of Elements: 1 Number of Bits per Element: 8 Function: Parallel or Serial to Serial Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫20,166
TC74AC86FN(F,M)	Toshiba Semiconductor and Storage	IC GATE XOR 4CH 2-INP 14-SOL Logic Type: XOR (Exclusive OR) Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.5 V ~ 1.65 V Logic Level - High: 1.5 V ~ 3.85 V Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOL Package / Case: 14-SOIC (0.154", 3.90mm Width)	パッケージ: 14-SOIC (0.154", 3.90mm Width)	在庫2,304
TC7SZ14F,LJ(CT	Toshiba Semiconductor and Storage	IC GATE L-MOS SMV Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: 0.2 V ~ 1.2 V Logic Level - High: 1.4 V ~ 3.6 V Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	パッケージ: SC-74A, SOT-753	在庫54,852
DF2B12M2SC,L3F	Toshiba Semiconductor and Storage	TVS DIODE 8VWM 18VC SC2 Type: Steering (Rail to Rail) Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 8V (Max) Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 18V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SC2	パッケージ: 2-SMD, No Lead	在庫6,264
TC35661SBG-007,EL	Toshiba Semiconductor and Storage	IC RF TXRX BLUETOOTH 64-FBGA Type: TxRx Only RF Family/Standard: Bluetooth Protocol: Bluetooth v4.0 Modulation: - Frequency: 2.4GHz Data Rate (Max): 2Mbps Power - Output: 2dBm Sensitivity: -90dBm Memory Size: - Serial Interfaces: I2C, I2S, SPI, UART GPIO: - Voltage - Supply: 1.8 V ~ 3.3 V Current - Receiving: 63mA Current - Transmitting: 63mA Operating Temperature: -40°C ~ 85°C Package / Case: 64-FBGA	パッケージ: 64-FBGA	在庫18,192
TLP3240(TP15,F)	Toshiba Semiconductor and Storage	PHOTORELAY 40V 4-SSOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 14 Ohm Load Current: 120mA Voltage - Input: 1.3VDC Voltage - Load: 0 ~ 40 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP Relay Type: Relay	パッケージ: 4-SMD (0.165", 4.20mm)	在庫8,406
TLP197D(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUTPUT 6-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 8 Ohm Load Current: 200mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 200 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm) Relay Type: Relay	パッケージ: 6-SOP (0.173", 4.40mm)	在庫6,264
TLP371F	Toshiba Semiconductor and Storage	OPTOISO 5KV DARL W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 50µs, 15µs Rise / Fall Time (Typ): 40µs, 15µs Input Type: DC Output Type: Darlington with Base Voltage - Output (Max): 300V Current - Output / Channel: 150mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 1.2V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	パッケージ: 6-DIP (0.300", 7.62mm)	在庫35,430
TLP559(IGM,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 2.5KV TRANS 8-DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 25% @ 10mA Current Transfer Ratio (Max): 75% @ 10mA Turn On / Turn Off Time (Typ): 450ns, 450ns Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	パッケージ: 8-DIP (0.300", 7.62mm)	在庫17,502
TBD62064AFAG,EL	Toshiba Semiconductor and Storage	IC DRVR TRANS ARRAY 4-CH 24SSOP Switch Type: General Purpose Number of Outputs: 4 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.25A Rds On (Typ): 430 mOhm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	パッケージ: 24-SOP (0.236", 6.00mm Width)	在庫2,784
TCR2LE19,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT1.9V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫5,904
TCTH011BE-LF-CT	Toshiba Semiconductor and Storage	CMOS LINEAR IC OVER TEMP DETECTI Type: Thermal Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: - Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: -	在庫23,925
74LCX32FT	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14TSSOPB Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65V ~ 3.6V Current - Quiescent (Max): 10 µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOPB Package / Case: 14-TSSOP (0.173", 4.40mm Width)	パッケージ: -	在庫711
TK090A65Z-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 30A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote
2SK3798-STA4-Q-M	Toshiba Semiconductor and Storage	POWER MOSFET TRANSISTOR TO-220(S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: -	Request a Quote

2SK2145-GR(TE85L,F

Toshiba Semiconductor and Storage

MOSFET 2N-CH JFET 50V SMV

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.6mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 200mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

パッケージ: SC-74A, SOT-753

在庫5,040

TPN5900CNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 150V 9A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫3,760

TK6A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫22,194

SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

パッケージ: SOT-563, SOT-666

在庫32,976

2SA1954-A(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PNP 12V 0.5A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 100mW
Frequency - Transition: 130MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫3,424

RN2310(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

パッケージ: SC-70, SOT-323

在庫5,984

RN2705JE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: SOT-553

在庫3,232

RN4603(TE85L,F)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.3W SM6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz, 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

パッケージ: SC-74, SOT-457

在庫600,000

RN4984(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫2,256

RN4982,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫21,600

TCK106AF,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH SMV

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 63 mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SC-74A, SOT-753
Supplier Device Package: 5-SMV, SOT-25, SC-74A

パッケージ: SC-74A, SOT-753

在庫4,304

TBD62083AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18SOP

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): -
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOP

パッケージ: 18-SOIC (0.295", 7.50mm Width)

在庫118,542

TB6641FTG,8,EL

Toshiba Semiconductor and Storage

IC DC MOTOR DRVR PAR 32VQFN

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel, PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 45 V
Voltage - Load: 10 V ~ 45 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: 32-VQFN (5x5)

パッケージ: 32-VFQFN Exposed Pad

在庫3,040

74HC165D(BJ)

Toshiba Semiconductor and Storage

IC 8BIT SHIFT REGISTER 16SOIC

Logic Type: Shift Register
Output Type: Complementary
Number of Elements: 1
Number of Bits per Element: 8
Function: Parallel or Serial to Serial
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫20,166

TC74AC86FN(F,M)

Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-SOL

Logic Type: XOR (Exclusive OR)
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.5 V ~ 1.65 V
Logic Level - High: 1.5 V ~ 3.85 V
Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOL
Package / Case: 14-SOIC (0.154", 3.90mm Width)

パッケージ: 14-SOIC (0.154", 3.90mm Width)

在庫2,304

TC7SZ14F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE L-MOS SMV

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Schmitt Trigger
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: 0.2 V ~ 1.2 V
Logic Level - High: 1.4 V ~ 3.6 V
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

パッケージ: SC-74A, SOT-753

在庫54,852

DF2B12M2SC,L3F

Toshiba Semiconductor and Storage

TVS DIODE 8VWM 18VC SC2

Type: Steering (Rail to Rail)
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 8V (Max)
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 18V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SC2

パッケージ: 2-SMD, No Lead

在庫6,264

TC35661SBG-007,EL

Toshiba Semiconductor and Storage

IC RF TXRX BLUETOOTH 64-FBGA

Type: TxRx Only
RF Family/Standard: Bluetooth
Protocol: Bluetooth v4.0
Modulation: -
Frequency: 2.4GHz
Data Rate (Max): 2Mbps
Power - Output: 2dBm
Sensitivity: -90dBm
Memory Size: -
Serial Interfaces: I2C, I2S, SPI, UART
GPIO: -
Voltage - Supply: 1.8 V ~ 3.3 V
Current - Receiving: 63mA
Current - Transmitting: 63mA
Operating Temperature: -40°C ~ 85°C
Package / Case: 64-FBGA

パッケージ: 64-FBGA

在庫18,192

TLP3240(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 4-SSOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 14 Ohm
Load Current: 120mA
Voltage - Input: 1.3VDC
Voltage - Load: 0 ~ 40 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.165", 4.20mm)
Supplier Device Package: 4-SSOP
Relay Type: Relay

パッケージ: 4-SMD (0.165", 4.20mm)

在庫8,406

TLP197D(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUTPUT 6-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 8 Ohm
Load Current: 200mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 200 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.173", 4.40mm)
Supplier Device Package: 6-SOP (2.54mm)
Relay Type: Relay

パッケージ: 6-SOP (0.173", 4.40mm)

在庫6,264

TLP371F

Toshiba Semiconductor and Storage

OPTOISO 5KV DARL W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Input Type: DC
Output Type: Darlington with Base
Voltage - Output (Max): 300V
Current - Output / Channel: 150mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 1.2V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

パッケージ: 6-DIP (0.300", 7.62mm)

在庫35,430

TLP559(IGM,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV TRANS 8-DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 25% @ 10mA
Current Transfer Ratio (Max): 75% @ 10mA
Turn On / Turn Off Time (Typ): 450ns, 450ns
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 25mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

パッケージ: 8-DIP (0.300", 7.62mm)

在庫17,502

TBD62064AFAG,EL

Toshiba Semiconductor and Storage

IC DRVR TRANS ARRAY 4-CH 24SSOP

Switch Type: General Purpose
Number of Outputs: 4
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Rds On (Typ): 430 mOhm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

パッケージ: 24-SOP (0.236", 6.00mm Width)

在庫2,784

TCR2LE19,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT1.9V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫5,904

TCTH011BE-LF-CT

Toshiba Semiconductor and Storage

CMOS LINEAR IC OVER TEMP DETECTI

Type: Thermal
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: -
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: -

在庫23,925

74LCX32FT

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14TSSOPB

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Max): 10 µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOPB
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

パッケージ: -

在庫711

TK090A65Z-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: -

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2SK3798-STA4-Q-M

Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-220(S

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: -

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