ページ 95 - Toshiba Semiconductor and Storage 製品

部品番号	メーカ	説明	パッケージ	在庫
TK4A53D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 525V 4A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫3,248
TK13A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 13A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	パッケージ: TO-220-3 Full Pack	在庫7,856
TK58E06N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 60V 58A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 58A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 29A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	パッケージ: TO-220-3	在庫7,776
TPH7R006PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	パッケージ: 8-PowerVDFN	在庫48,006
SSM3J117TU,LF	Toshiba Semiconductor and Storage	MOSFET P-CHANNEL 30V 2A 3SMD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 117 mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	パッケージ: 3-SMD, Flat Leads	在庫25,710
SSM3J327R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	パッケージ: SOT-23-3 Flat Leads	在庫366,084
2SA965-O,F(J	Toshiba Semiconductor and Storage	TRANS PNP 800MA 120V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	パッケージ: TO-226-3, TO-92-3 Long Body	在庫2,656
2SA1931(NOMARK,A,Q	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	パッケージ: TO-220-3 Full Pack	在庫6,976
RN2102,LF(CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	パッケージ: SC-75, SOT-416	在庫3,280
TCK22913G,LF	Toshiba Semiconductor and Storage	IC PWR SWITCH P-CHAN 1:1 WCSP6E Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Rds On (Typ): 31 mOhm Input Type: Non-Inverting Features: Load Discharge Fault Protection: Over Temperature, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA, WLCSP Supplier Device Package: 6-WCSPE (0.80x1.2)	パッケージ: 6-UFBGA, WLCSP	在庫41,820
TB67S179FTG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1 ~ 1/32 Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 60 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-VQFN (7x7)	パッケージ: 48-VFQFN Exposed Pad	在庫5,216
THGBMHG8C4LBAWR	Toshiba Semiconductor and Storage	IC FLASH 256GBIT 52MHZ 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	パッケージ: 153-WFBGA	在庫2,384
TC7SH02FSTPL3	Toshiba Semiconductor and Storage	IC GATE NOR 1CH 2-INP FSV Logic Type: NOR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: fSV Package / Case: SOT-953	パッケージ: SOT-953	在庫3,104
LTA149B781F	Toshiba Semiconductor and Storage	LCD 14.9" 1280X390 LVDS Display Type: TFT - Color Display Mode: Transmissive Touchscreen: - Diagonal Screen Size: 14.9" (378.46mm) Viewing Area: 360.94mm W x 109.98mm H Backlight: CCFL Dot Pixels: 1280 x 390 Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Background Color: -	パッケージ: -	在庫2,286
DF3A3.3CT(TPL3)	Toshiba Semiconductor and Storage	TVS DIODE 1VWM CST3 Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 1V Voltage - Breakdown (Min): 3.1V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 115pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	パッケージ: SC-101, SOT-883	在庫480,000
TLP172GM(TPR,E	Toshiba Semiconductor and Storage	PHOTORELAY SPST 110MA 6-SOP 4PIN Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 50 Ohm Load Current: 110mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 350 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Supplier Device Package: 6-SOP Relay Type: Relay	パッケージ: 6-SOP (0.179", 4.55mm), 4 Leads	在庫6,804
TC4013BP(N,F)	Toshiba Semiconductor and Storage	IC FF D-TYPE DUAL 1BIT 14DIP Function: Reset Type: D-Type Output Type: Differential Number of Elements: 2 Number of Bits per Element: 1 Clock Frequency: 20MHz Max Propagation Delay @ V, Max CL: 90ns @ 15V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 3.4mA, 3.4mA Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Iq): 120µA Input Capacitance: 5pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm)	パッケージ: 14-DIP (0.300", 7.62mm)	在庫7,584
7UL1T32FU,LF	Toshiba Semiconductor and Storage	L-MOS LVP SERIES GATE OR VCC:2.3 Logic Type: OR Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 0.4V Logic Level - High: 2.2V ~ 2.48V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	パッケージ: 5-TSSOP, SC-70-5, SOT-353	在庫25,122
TCR4DG125,LF	Toshiba Semiconductor and Storage	X34 LDO REGULATORS VOUT: 1.25V I Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.25V Voltage - Output (Max): - Voltage Dropout (Max): 0.781V @ 420mA Current - Output: 420mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	パッケージ: 4-XFBGA, CSPBGA	在庫78,858
GT30J121-Q	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO3PN IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A Power - Max: 170 W Switching Energy: 1mJ (on), 800µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 30A, 24Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	パッケージ: -	在庫171
MT3S111P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	パッケージ: -	Request a Quote
SSM6P15FU-LF	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	パッケージ: -	在庫97,317
RN1709JE-TE85L-F	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	パッケージ: -	在庫300
TTC5460B-Q-S	Toshiba Semiconductor and Storage	TRANSISTOR NPN TO126N Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote
RN1114MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	パッケージ: -	在庫24,000
RN1412-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	在庫18,000
RN4984FE-LF-CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	パッケージ: -	在庫210
RN2406-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	パッケージ: -	在庫17,400

TK4A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 4A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 525V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫3,248

TK13A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 13A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

パッケージ: TO-220-3 Full Pack

在庫7,856

TK58E06N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 60V 58A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 29A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

パッケージ: TO-220-3

在庫7,776

TPH7R006PL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 4.5V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

パッケージ: 8-PowerVDFN

在庫48,006

SSM3J117TU,LF

Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 30V 2A 3SMD

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 117 mOhm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

パッケージ: 3-SMD, Flat Leads

在庫25,710

SSM3J327R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

パッケージ: SOT-23-3 Flat Leads

在庫366,084

2SA965-O,F(J

Toshiba Semiconductor and Storage

TRANS PNP 800MA 120V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

パッケージ: TO-226-3, TO-92-3 Long Body

在庫2,656

2SA1931(NOMARK,A,Q

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

パッケージ: TO-220-3 Full Pack

在庫6,976

RN2102,LF(CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

パッケージ: SC-75, SOT-416

在庫3,280

TCK22913G,LF

Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Rds On (Typ): 31 mOhm
Input Type: Non-Inverting
Features: Load Discharge
Fault Protection: Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA, WLCSP
Supplier Device Package: 6-WCSPE (0.80x1.2)

パッケージ: 6-UFBGA, WLCSP

在庫41,820

TB67S179FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1 ~ 1/32
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 60 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-VQFN (7x7)

パッケージ: 48-VFQFN Exposed Pad

在庫5,216

THGBMHG8C4LBAWR

Toshiba Semiconductor and Storage

IC FLASH 256GBIT 52MHZ 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

パッケージ: 153-WFBGA

在庫2,384

TC7SH02FSTPL3

Toshiba Semiconductor and Storage

IC GATE NOR 1CH 2-INP FSV

Logic Type: NOR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: fSV
Package / Case: SOT-953

パッケージ: SOT-953

在庫3,104

LTA149B781F

Toshiba Semiconductor and Storage

LCD 14.9" 1280X390 LVDS

Display Type: TFT - Color
Display Mode: Transmissive
Touchscreen: -
Diagonal Screen Size: 14.9" (378.46mm)
Viewing Area: 360.94mm W x 109.98mm H
Backlight: CCFL
Dot Pixels: 1280 x 390
Interface: LVDS
Graphics Color: Red, Green, Blue (RGB)
Background Color: -

パッケージ: -

在庫2,286

DF3A3.3CT(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM CST3

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 1V
Voltage - Breakdown (Min): 3.1V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

パッケージ: SC-101, SOT-883

在庫480,000

TLP172GM(TPR,E

Toshiba Semiconductor and Storage

PHOTORELAY SPST 110MA 6-SOP 4PIN

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 50 Ohm
Load Current: 110mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Supplier Device Package: 6-SOP
Relay Type: Relay

パッケージ: 6-SOP (0.179", 4.55mm), 4 Leads

在庫6,804

TC4013BP(N,F)

Toshiba Semiconductor and Storage

IC FF D-TYPE DUAL 1BIT 14DIP

Function: Reset
Type: D-Type
Output Type: Differential
Number of Elements: 2
Number of Bits per Element: 1
Clock Frequency: 20MHz
Max Propagation Delay @ V, Max CL: 90ns @ 15V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Iq): 120µA
Input Capacitance: 5pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)

パッケージ: 14-DIP (0.300", 7.62mm)

在庫7,584

7UL1T32FU,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES GATE OR VCC:2.3

Logic Type: OR Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 0.4V
Logic Level - High: 2.2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

パッケージ: 5-TSSOP, SC-70-5, SOT-353

在庫25,122

TCR4DG125,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 1.25V I

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.781V @ 420mA
Current - Output: 420mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPE (0.65x0.65)

パッケージ: 4-XFBGA, CSPBGA

在庫78,858

GT30J121-Q

Toshiba Semiconductor and Storage

IGBT 600V 30A 170W TO3PN

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Power - Max: 170 W
Switching Energy: 1mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 90ns/300ns
Test Condition: 300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

パッケージ: -

在庫171

MT3S111P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Gain: 10.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

パッケージ: -

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SSM6P15FU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

パッケージ: -

在庫97,317

RN1709JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=47KOHM Q1BER=2

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

パッケージ: -

在庫300

TTC5460B-Q-S

Toshiba Semiconductor and Storage

TRANSISTOR NPN TO126N

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Power - Max: -
Frequency - Transition: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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RN1114MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

パッケージ: -

在庫24,000

RN1412-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

在庫18,000

RN4984FE-LF-CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

パッケージ: -

在庫210

RN2406-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

パッケージ: -

在庫17,400