Vishay Semiconductor Diodes Division 製品

VLZ6V2B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 6.12V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 6.12V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

パッケージ: SOD-80 Variant

MMSZ5230C-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.7V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 19 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

BZT52B10-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW SOD-123

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 5.2 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 7.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

パッケージ: SOD-123

MMBZ4714-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 33V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10nA @ 25V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

MMBZ4706-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 19V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 19V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 14.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

BZX84C20-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 20V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

パッケージ: TO-236-3, SC-59, SOT-23-3

TZM5229B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

パッケージ: DO-213AC, MINI-MELF, SOD-80

BAR64V-05W-E3-18

Vishay Semiconductor Diodes Division

DIODE RF PIN DUAL CC SOT323

• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (Max): 100V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

パッケージ: SC-70, SOT-323

1N4004GPHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -50°C ~ 150°C

パッケージ: DO-204AL, DO-41, Axial

15ETL06-1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO262

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: TO-262-3 Long Leads, I2Pak, TO-262AA

70U160D

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 250A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 250A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 785A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60mA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 200°C

パッケージ: DO-205AB, DO-9, Stud

VS-SD1700C45K

Vishay Semiconductor Diodes Division

DIODE MODULE 4.5KV 1875A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500V
• Current - Average Rectified (Io): 1875A
• Voltage - Forward (Vf) (Max) @ If: 2.11V @ 4000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75mA @ 4500V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

パッケージ: DO-200AC, K-PUK

VS-VSKE270-08PBF

Vishay Semiconductor Diodes Division

DIODE GEN 800V 270A MAGNAPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (3)
• Supplier Device Package: MAGN-A-PAK?
• Operating Temperature - Junction: -40°C ~ 150°C

パッケージ: MAGN-A-PAK (3)

VS-80PFR160W

Vishay Semiconductor Diodes Division

DIODE STD REC 80A DO-5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-203AB, DO-5, Stud

RGP02-20E-E3/53

Vishay Semiconductor Diodes Division

DIODE 0.5A 2000V 300NS DO-204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 5µA @ 2000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-204AL, DO-41, Axial

S5B-E3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AB, SMC

1N6482HE3/97

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

パッケージ: DO-213AB, MELF (Glass)

BAT54WS-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: 125°C (Max)

パッケージ: SC-76, SOD-323

SS3P6HM3/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-220AA

RS1D-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

パッケージ: DO-214AC, SMA

VS-80CNQ035ASLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 40A D618SL

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 35V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: D-61-8-SL
• Supplier Device Package: D-61-8-SL

パッケージ: D-61-8-SL

MBRF1545CT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V ITO220

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

パッケージ: TO-220-3 Full Pack, Isolated Tab

SBL1040CTHE3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 40V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Operating Temperature - Junction: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

パッケージ: TO-220-3

TPSMA16AHE3/5AT

Vishay Semiconductor Diodes Division

TVS DIODE 13.6VWM 22VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22V
• Current - Peak Pulse (10/1000µs): 17.8A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

パッケージ: DO-214AC, SMA

BZT03D12-TAP

Vishay Semiconductor Diodes Division

TVS DIODE 9.3VWM 17.5VC SOD57

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9.3V
• Voltage - Breakdown (Min): 10.8V
• Voltage - Clamping (Max) @ Ipp: 17.5V
• Current - Peak Pulse (10/1000µs): 17.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57

パッケージ: SOD-57, Axial

SA24CAHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 38.9VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 12.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

パッケージ: DO-204AC, DO-15, Axial

SMCJ24CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 38.9VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 38.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

パッケージ: DO-214AB, SMC

SM6T30CAHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 25.6VWM 41.5VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.5V
• Current - Peak Pulse (10/1000µs): 14.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

パッケージ: DO-214AA, SMB