ページ 37 - Vishay Siliconix 製品

部品番号	メーカ	説明	パッケージ	在庫
2N4339-2	Vishay Siliconix	MOSFET N-CH 50V 1.5MA TO-206AA FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	パッケージ: TO-206AA, TO-18-3 Metal Can	在庫6,176
2N5116JTX02	Vishay Siliconix	JFET P-CH 30V TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	パッケージ: TO-206AA, TO-18-3 Metal Can	在庫5,040
SI4404DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫2,608
SIE830DF-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 50A 10-POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	パッケージ: 10-PolarPAK? (S)	在庫8,652
SI1067X-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 1.06A SOT563F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	パッケージ: SOT-563, SOT-666	在庫4,624
SI7866ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	パッケージ: PowerPAK? SO-8	在庫5,104
SQM200N04-1M7L_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	パッケージ: TO-263-7, D2Pak (6 Leads + Tab)	在庫3,120
SIA811ADJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.5A PPAK SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Dual Package / Case: PowerPAK? SC-70-6 Dual	パッケージ: PowerPAK? SC-70-6 Dual	在庫181,476
SI7633DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 60A PPAK 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	パッケージ: PowerPAK? SO-8	在庫2,304
IRFP450LCPBF	Vishay Siliconix	MOSFET N-CH 500V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	パッケージ: TO-247-3	在庫4,832
SI3460BDV-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	パッケージ: SOT-23-6 Thin, TSOT-23-6	在庫579,960
SI7454DP-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 5A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	パッケージ: PowerPAK? SO-8	在庫34,476
SI6955ADQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 2.5A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫3,776
SI6925ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 3.3A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫387,024
SIP21106DVP-12-E3	Vishay Siliconix	IC REG LINEAR 1.2V 150MA TSC75-6 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? TSC-75-6 Supplier Device Package: PowerPAK? TSC75-6	パッケージ: PowerPAK? TSC-75-6	在庫108,000
SI9166BQ-T1-E3	Vishay Siliconix	IC REG BCK BST 1.5A SYNC 16TSSOP Function: Step-Up, Step-Down Output Configuration: Positive Topology: Buck, Boost Output Type: - Number of Outputs: 1 Voltage - Input (Min): 2.7V Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: 1.5A (Switch) Frequency - Switching: 200kHz ~ 2MHz Synchronous Rectifier: Yes Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	パッケージ: 16-TSSOP (0.173", 4.40mm Width)	在庫6,864
90731022A	Vishay Siliconix	MOSFET Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	パッケージ: -	在庫4,000
DG413HSDY-T1	Vishay Siliconix	IC SWITCH QUAD SPST 16-SOIC Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 105ns, 80ns -3db Bandwidth: - Charge Injection: 22pC Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -88dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	パッケージ: 16-SOIC (0.154", 3.90mm Width)	在庫3,600
DG406BDN	Vishay Siliconix	IC ANALOG SWITCH SPDT 28PLCC Switch Circuit: - Multiplexer/Demultiplexer Circuit: 16:1 Number of Circuits: 1 On-State Resistance (Max): 60 Ohm Channel-to-Channel Matching (ΔRon): 3 Ohm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 107ns, 88ns -3db Bandwidth: - Charge Injection: 11pC Channel Capacitance (CS(off), CD(off)): 6pF, 108pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 28-LCC (J-Lead) Supplier Device Package: 28-PLCC (11.51x11.51)	パッケージ: 28-LCC (J-Lead)	在庫5,616
DG2517DQ-T1-E3	Vishay Siliconix	IC SWITCH DUAL SPDT 10MSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 2 On-State Resistance (Max): 4 Ohm Channel-to-Channel Matching (ΔRon): 100 mOhm Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 25ns, 20ns -3db Bandwidth: 242MHz Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 8pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -73dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-MSOP	パッケージ: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	在庫5,360
DG2735DN-T1-E4	Vishay Siliconix	IC SWITCH 2XSPDT 500MOHM MINIQFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 2 On-State Resistance (Max): 500 mOhm Channel-to-Channel Matching (ΔRon): 60 mOhm Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 78ns, 58ns -3db Bandwidth: 50MHz Charge Injection: - Channel Capacitance (CS(off), CD(off)): 55pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -70dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-UFQFN Supplier Device Package: 8-miniQFN (1.4x1.4)	パッケージ: 8-UFQFN	在庫226,656
SQD100N03-3M2L_GE3	Vishay Siliconix	MOSFET N-CH 30V 100A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
SIC438DED-T1-GE3	Vishay Siliconix	IC REG BUCK ADJ 8A POWERPAK Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 3V Voltage - Input (Max): 28V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 25.2V Current - Output: 8A Frequency - Switching: 300kHz ~ 1MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-PowerWFQFN Supplier Device Package: PowerPAK® MLP44-24	パッケージ: -	在庫8,184
SIS176LDN-T1-GE3	Vishay Siliconix	N-CHANNEL 70 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 70 V Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	パッケージ: -	在庫59,349
SQJ211ELP-T1_GE3	Vishay Siliconix	MOSFET P-CH 100V 33.6A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	パッケージ: -	Request a Quote
SISS26LDN-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 23.7A/81.2A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S	パッケージ: -	在庫3,357
SIHD3N50DT5-GE3	Vishay Siliconix	MOSFET N-CH 500V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	パッケージ: -	Request a Quote
SIPQ32433BDN-T1E3	Vishay Siliconix	LOAD SWITCH W/ PROGRAMMABLE OVP Function: Electronic Fuse Sensing Method: High-Side Accuracy: ±8% Voltage - Input: 2.8V ~ 22V Current - Output: 3.5A Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	パッケージ: -	Request a Quote

2N4339-2

Vishay Siliconix

MOSFET N-CH 50V 1.5MA TO-206AA

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

パッケージ: TO-206AA, TO-18-3 Metal Can

在庫6,176

2N5116JTX02

Vishay Siliconix

JFET P-CH 30V TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

パッケージ: TO-206AA, TO-18-3 Metal Can

在庫5,040

SI4404DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 23A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫2,608

SIE830DF-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 50A 10-POLARPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK? (S)
Package / Case: 10-PolarPAK? (S)

パッケージ: 10-PolarPAK? (S)

在庫8,652

SI1067X-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 1.06A SOT563F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666

パッケージ: SOT-563, SOT-666

在庫4,624

SI7866ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 40A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

パッケージ: PowerPAK? SO-8

在庫5,104

SQM200N04-1M7L_GE3

Vishay Siliconix

MOSFET N-CH 40V 200A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

パッケージ: TO-263-7, D2Pak (6 Leads + Tab)

在庫3,120

SIA811ADJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.5A PPAK SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Vgs (Max): ±8V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 116 mOhm @ 2.8A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Dual
Package / Case: PowerPAK? SC-70-6 Dual

パッケージ: PowerPAK? SC-70-6 Dual

在庫181,476

SI7633DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 60A PPAK 8SO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

パッケージ: PowerPAK? SO-8

在庫2,304

IRFP450LCPBF

Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

パッケージ: TO-247-3

在庫4,832

SI3460BDV-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 8A 6-TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

パッケージ: SOT-23-6 Thin, TSOT-23-6

在庫579,960

SI7454DP-T1-E3

Vishay Siliconix

MOSFET N-CH 100V 5A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

パッケージ: PowerPAK? SO-8

在庫34,476

SI6955ADQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫3,776

SI6925ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 3.3A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫387,024

SIP21106DVP-12-E3

Vishay Siliconix

IC REG LINEAR 1.2V 150MA TSC75-6

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? TSC-75-6
Supplier Device Package: PowerPAK? TSC75-6

パッケージ: PowerPAK? TSC-75-6

在庫108,000

SI9166BQ-T1-E3

Vishay Siliconix

IC REG BCK BST 1.5A SYNC 16TSSOP

Function: Step-Up, Step-Down
Output Configuration: Positive
Topology: Buck, Boost
Output Type: -
Number of Outputs: 1
Voltage - Input (Min): 2.7V
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: 1.5A (Switch)
Frequency - Switching: 200kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

パッケージ: 16-TSSOP (0.173", 4.40mm Width)

在庫6,864

90731022A

Vishay Siliconix

MOSFET

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

在庫4,000

DG413HSDY-T1

Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 105ns, 80ns
-3db Bandwidth: -
Charge Injection: 22pC
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -88dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

パッケージ: 16-SOIC (0.154", 3.90mm Width)

在庫3,600

DG406BDN

Vishay Siliconix

IC ANALOG SWITCH SPDT 28PLCC

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: 16:1
Number of Circuits: 1
On-State Resistance (Max): 60 Ohm
Channel-to-Channel Matching (ΔRon): 3 Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 107ns, 88ns
-3db Bandwidth: -
Charge Injection: 11pC
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 28-LCC (J-Lead)
Supplier Device Package: 28-PLCC (11.51x11.51)

パッケージ: 28-LCC (J-Lead)

在庫5,616

DG2517DQ-T1-E3

Vishay Siliconix

IC SWITCH DUAL SPDT 10MSOP

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 4 Ohm
Channel-to-Channel Matching (ΔRon): 100 mOhm
Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
-3db Bandwidth: 242MHz
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 8pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -73dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP

パッケージ: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

在庫5,360

DG2735DN-T1-E4

Vishay Siliconix

IC SWITCH 2XSPDT 500MOHM MINIQFN

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 500 mOhm
Channel-to-Channel Matching (ΔRon): 60 mOhm
Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 78ns, 58ns
-3db Bandwidth: 50MHz
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -70dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)

パッケージ: 8-UFQFN

在庫226,656

SQD100N03-3M2L_GE3

Vishay Siliconix

MOSFET N-CH 30V 100A TO252AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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SIC438DED-T1-GE3

Vishay Siliconix

IC REG BUCK ADJ 8A POWERPAK

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 3V
Voltage - Input (Max): 28V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 25.2V
Current - Output: 8A
Frequency - Switching: 300kHz ~ 1MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-PowerWFQFN
Supplier Device Package: PowerPAK® MLP44-24

パッケージ: -

在庫8,184

SIS176LDN-T1-GE3

Vishay Siliconix

N-CHANNEL 70 V (D-S) MOSFET POWE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 70 V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8

パッケージ: -

在庫59,349

SQJ211ELP-T1_GE3

Vishay Siliconix

MOSFET P-CH 100V 33.6A PPAK SO-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

パッケージ: -

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SISS26LDN-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 23.7A/81.2A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S

パッケージ: -

在庫3,357

SIHD3N50DT5-GE3

Vishay Siliconix

MOSFET N-CH 500V 3A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

パッケージ: -

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SIPQ32433BDN-T1E3

Vishay Siliconix

LOAD SWITCH W/ PROGRAMMABLE OVP

Function: Electronic Fuse
Sensing Method: High-Side
Accuracy: ±8%
Voltage - Input: 2.8V ~ 22V
Current - Output: 3.5A
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

パッケージ: -

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