ページ 41 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品

部品番号	メーカ	説明	パッケージ	在庫	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO9926BL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 7.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,560	Logic Level Gate	20V	7.6A	23 mOhm @ 7.6A, 10V	1.1V @ 250µA	12.5nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4806L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 9.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫7,872	Logic Level Gate	20V	-	14 mOhm @ 9.4A, 10V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2041UFDB-7	Diodes Incorporated	MOSFET 2N-CH 20V 4.7A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	パッケージ: 6-UDFN Exposed Pad	在庫2,688	Standard	20V	4.7A	40 mOhm @ 4.2A, 4.5V	1.4V @ 250µA	15nC @ 8V	713pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SI4933DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 7.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫5,856	Logic Level Gate	12V	7.4A	14 mOhm @ 9.8A, 4.5V	1V @ 500µA	70nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4992EY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 75V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫4,304	Logic Level Gate	75V	3.6A	48 mOhm @ 4.8A, 10V	3V @ 250µA	21nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1988DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	パッケージ: 6-TSSOP, SC-88, SOT-363	在庫414,300	Logic Level Gate	20V	1.3A	168 mOhm @ 1.4A, 4.5V	1V @ 250µA	4.1nC @ 8V	110pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
FDW2601NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 8.2A 8TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: 8-TSSOP (0.173", 4.40mm Width)	在庫120,360	Logic Level Gate	30V	8.2A	15 mOhm @ 8.2A, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1840pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM60H23FT1G	Microsemi Corporation	MOSFET 4N-CH 600V 20A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	パッケージ: SP1	在庫6,176	Standard	600V	20A	276 mOhm @ 17A, 10V	5V @ 1mA	165nC @ 10V	5316pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
HCT802	TT Electronics/Optek Technology	MOSFET N/P-CH 90V 2A/1.1A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	パッケージ: 6-SMD, No Lead	在庫2,528	Standard	90V	2A, 1.1A	5 Ohm @ 1A, 10V	2.5V @ 1mA	-	70pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
ECH8667-TL-H	ON Semiconductor	MOSFET 2P-CH 30V 5.5A ECH8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 39 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	パッケージ: 8-SMD, Flat Lead	在庫129,696	Logic Level Gate	30V	5.5A	39 mOhm @ 2.5A, 10V	-	13nC @ 10V	600pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
DMN2008LFU-13	Diodes Incorporated	MOSFET 2NCH 20V 14.5A UDFN2030 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	パッケージ: 6-UFDFN Exposed Pad	在庫3,536	Standard	20V	14.5A	5.4 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	42.3nC @ 10V	1418pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
MCH6660-TL-W	ON Semiconductor	MOSFET N/P-CH 20V 2A/1.5A MCPH6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Rds On (Max) @ Id, Vgs: 136 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	パッケージ: 6-SMD, Flat Leads	在庫3,200	Logic Level Gate, 1.8V Drive	20V	2A, 1.5A	136 mOhm @ 1A, 4.5V	1.3V @ 1mA	1.8nC @ 4.5V	128pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
EFC4626R-TR	ON Semiconductor	MOSFET 2N-CH 24V 5A CSP4 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Supplier Device Package: -	パッケージ: 4-XFBGA	在庫3,536	Logic Level Gate, 2.5V Drive	-	-	-	-	7.5nC @ 4.5V	-	1.4W	150°C (TJ)	Surface Mount	4-XFBGA	-
ALD310704PCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	パッケージ: 16-DIP (0.300", 7.62mm)	在庫6,448	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
DI9956T	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫26,394	Logic Level Gate	30V	3.7A	80 mOhm @ 2.2A, 10V	2.8V @ 250µA	27nC @ 10V	320pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4916DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 10A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.3W, 3.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	パッケージ: 8-SOIC (0.154", 3.90mm Width)	在庫222,252	Logic Level Gate	30V	10A, 10.5A	18 mOhm @ 10A, 10V	3V @ 250µA	10nC @ 4.5V	-	3.3W, 3.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN5L06DMK-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.305A SOT-26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 400mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	パッケージ: SOT-23-6	在庫53,220	Logic Level Gate	50V	305mA	2 Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	400mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ZXMN3AMCTA	Diodes Incorporated	MOSFET 2N-CH 30V 2.9A DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	パッケージ: 8-WDFN Exposed Pad	在庫29,982	Logic Level Gate	30V	2.9A	120 mOhm @ 2.5A, 10V	3V @ 250µA	3.9nC @ 10V	190pF @ 25V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
IRFI4020H-117P	Infineon Technologies	MOSFET 2N-CH 200V 9.1A TO-220FP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.1A Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	パッケージ: TO-220-5 Full Pack	在庫15,504	Standard	200V	9.1A	100 mOhm @ 5.5A, 10V	4.9V @ 100µA	29nC @ 10V	1240pF @ 25V	21W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack	TO-220-5 Full-Pak
SIL2429HE3-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.6A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.16nC @ 4.5V, 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V, 214pF @ 10V Power - Max: 670mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	パッケージ: -	Request a Quote	-	20V	2A (Ta), 1.6A (Ta)	57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V	1.1V @ 250µA, 1V @ 250µA	3.16nC @ 4.5V, 2.9nC @ 4.5V	188pF @ 10V, 214pF @ 10V	670mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
FW4604-TL-2WX	onsemi	NCH+PCH 4.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BUK9V13-40HX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	パッケージ: -	在庫12,666	Logic Level Gate	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AOTE21115C	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 5.1A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	パッケージ: -	Request a Quote	-	20V	5.1A (Ta)	40mOhm @ 5.1A, 4.5V	950mV @ 250µA	17nC @ 4.5V	930pF @ 10V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
PMDPB30XNZ	Nexperia USA Inc.	MOSFET 2N-CH 20V 4A 6HUSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 490mW (Ta), 8.33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	パッケージ: -	在庫14,370	-	20V	4A (Ta)	40mOhm @ 3A, 4.5V	900mV @ 250µA	-	660pF @ 10V	490mW (Ta), 8.33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-HUSON (2x2)
IPG20N06S2L65AUMA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMC3730UVT-7	Diodes Incorporated	MOSFET N/P-CH 25V 0.68A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	パッケージ: -	在庫8,970	-	25V	680mA (Ta), 460mA (Ta)	450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V	1.1V @ 250µA	1.64nC @ 4.5V, 1.1nC @ 4.5V	50pF @ 10V, 63pF @ 10V	700mW	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
FW217-NMM-TL-E	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
EPC2100	EPC	GANFET 2N-CH 30V 10A/40A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	パッケージ: -	在庫690	-	30V	10A (Ta), 40A (Ta)	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	475pF @ 15V, 1960pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
FDPC4044-P	onsemi	MOSFET N-CHANNEL 8MLP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FF5MR20KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	パッケージ: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

AO9926BL

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,560

Logic Level Gate

20V

7.6A

23 mOhm @ 7.6A, 10V

1.1V @ 250µA

12.5nC @ 10V

630pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4806L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫7,872

Logic Level Gate

20V

-

14 mOhm @ 9.4A, 10V

1V @ 250µA

17.9nC @ 4.5V

1810pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN2041UFDB-7

Diodes Incorporated

MOSFET 2N-CH 20V 4.7A 6UDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

パッケージ: 6-UDFN Exposed Pad

在庫2,688

Standard

20V

4.7A

40 mOhm @ 4.2A, 4.5V

1.4V @ 250µA

15nC @ 8V

713pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SI4933DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 7.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫5,856

Logic Level Gate

12V

7.4A

14 mOhm @ 9.8A, 4.5V

1V @ 500µA

70nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4992EY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 75V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫4,304

Logic Level Gate

75V

3.6A

48 mOhm @ 4.8A, 10V

3V @ 250µA

21nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1988DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

パッケージ: 6-TSSOP, SC-88, SOT-363

在庫414,300

Logic Level Gate

20V

1.3A

168 mOhm @ 1.4A, 4.5V

1V @ 250µA

4.1nC @ 8V

110pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

FDW2601NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8.2A 8TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: 8-TSSOP (0.173", 4.40mm Width)

在庫120,360

Logic Level Gate

30V

8.2A

15 mOhm @ 8.2A, 4.5V

1.5V @ 250µA

30nC @ 4.5V

1840pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM60H23FT1G

Microsemi Corporation

MOSFET 4N-CH 600V 20A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

パッケージ: SP1

在庫6,176

Standard

600V

20A

276 mOhm @ 17A, 10V

5V @ 1mA

165nC @ 10V

5316pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

HCT802

TT Electronics/Optek Technology

MOSFET N/P-CH 90V 2A/1.1A SMD

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

パッケージ: 6-SMD, No Lead

在庫2,528

Standard

90V

2A, 1.1A

5 Ohm @ 1A, 10V

2.5V @ 1mA

-

70pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

ECH8667-TL-H

ON Semiconductor

MOSFET 2P-CH 30V 5.5A ECH8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

パッケージ: 8-SMD, Flat Lead

在庫129,696

Logic Level Gate

30V

5.5A

39 mOhm @ 2.5A, 10V

-

13nC @ 10V

600pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

DMN2008LFU-13

Diodes Incorporated

MOSFET 2NCH 20V 14.5A UDFN2030

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

パッケージ: 6-UFDFN Exposed Pad

在庫3,536

Standard

20V

14.5A

5.4 mOhm @ 5.5A, 4.5V

1.5V @ 250µA

42.3nC @ 10V

1418pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

MCH6660-TL-W

ON Semiconductor

MOSFET N/P-CH 20V 2A/1.5A MCPH6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Rds On (Max) @ Id, Vgs: 136 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

パッケージ: 6-SMD, Flat Leads

在庫3,200

Logic Level Gate, 1.8V Drive

20V

2A, 1.5A

136 mOhm @ 1A, 4.5V

1.3V @ 1mA

1.8nC @ 4.5V

128pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

EFC4626R-TR

ON Semiconductor

MOSFET 2N-CH 24V 5A CSP4

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: -

パッケージ: 4-XFBGA

在庫3,536

Logic Level Gate, 2.5V Drive

-

7.5nC @ 4.5V

-

1.4W

150°C (TJ)

Surface Mount

4-XFBGA

-

ALD310704PCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

パッケージ: 16-DIP (0.300", 7.62mm)

在庫6,448

Standard

8V

-

380mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

DI9956T

Diodes Incorporated

MOSFET 2N-CH 30V 3.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫26,394

Logic Level Gate

30V

3.7A

80 mOhm @ 2.2A, 10V

2.8V @ 250µA

27nC @ 10V

320pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4916DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 10A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

パッケージ: 8-SOIC (0.154", 3.90mm Width)

在庫222,252

Logic Level Gate

30V

10A, 10.5A

18 mOhm @ 10A, 10V

3V @ 250µA

10nC @ 4.5V

-

3.3W, 3.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN5L06DMK-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.305A SOT-26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 400mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

パッケージ: SOT-23-6

在庫53,220

Logic Level Gate

50V

305mA

2 Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

400mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

ZXMN3AMCTA

Diodes Incorporated

MOSFET 2N-CH 30V 2.9A DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

パッケージ: 8-WDFN Exposed Pad

在庫29,982

Logic Level Gate

30V

2.9A

120 mOhm @ 2.5A, 10V

3V @ 250µA

3.9nC @ 10V

190pF @ 25V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

IRFI4020H-117P

Infineon Technologies

MOSFET 2N-CH 200V 9.1A TO-220FP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Power - Max: 21W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack
Supplier Device Package: TO-220-5 Full-Pak

パッケージ: TO-220-5 Full Pack

在庫15,504

Standard

200V

9.1A

100 mOhm @ 5.5A, 10V

4.9V @ 100µA

29nC @ 10V

1240pF @ 25V

21W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack

TO-220-5 Full-Pak

SIL2429HE3-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.16nC @ 4.5V, 2.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V, 214pF @ 10V
Power - Max: 670mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

パッケージ: -

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20V

2A (Ta), 1.6A (Ta)

57mOhm @ 1A, 4.5V, 120mOhm @ 1A, 4.5V

1.1V @ 250µA, 1V @ 250µA

3.16nC @ 4.5V, 2.9nC @ 4.5V

188pF @ 10V, 214pF @ 10V

670mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

FW4604-TL-2WX

onsemi

NCH+PCH 4.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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BUK9V13-40HX

Nexperia USA Inc.

MOSFET 2N-CH 40V 42A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power - Max: 46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

パッケージ: -

在庫12,666

Logic Level Gate

40V

42A (Ta)

13.6mOhm @ 10A, 10V

2.2V @ 1mA

19.4nC @ 10V

1160pF @ 25V

46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AOTE21115C

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 5.1A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

パッケージ: -

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20V

5.1A (Ta)

40mOhm @ 5.1A, 4.5V

950mV @ 250µA

17nC @ 4.5V

930pF @ 10V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

PMDPB30XNZ

Nexperia USA Inc.

MOSFET 2N-CH 20V 4A 6HUSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Power - Max: 490mW (Ta), 8.33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

パッケージ: -

在庫14,370

-

20V

4A (Ta)

40mOhm @ 3A, 4.5V

900mV @ 250µA

-

660pF @ 10V

490mW (Ta), 8.33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-HUSON (2x2)

IPG20N06S2L65AUMA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

DMC3730UVT-7

Diodes Incorporated

MOSFET N/P-CH 25V 0.68A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

パッケージ: -

在庫8,970

-

25V

680mA (Ta), 460mA (Ta)

450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V

1.1V @ 250µA

1.64nC @ 4.5V, 1.1nC @ 4.5V

50pF @ 10V, 63pF @ 10V

700mW

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

FW217-NMM-TL-E

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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-

EPC2100

EPC

GANFET 2N-CH 30V 10A/40A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

パッケージ: -

在庫690

-

30V

10A (Ta), 40A (Ta)

8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V

2.5V @ 4mA, 2.5V @ 16mA

4.9nC @ 15V, 19nC @ 15V

475pF @ 15V, 1960pF @ 15V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

FDPC4044-P

onsemi

MOSFET N-CHANNEL 8MLP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

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FF5MR20KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

パッケージ: -

Request a Quote

-