ページ 42 - トランジスタ - FET、MOSFET - アレイ | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - FET、MOSFET - アレイ

レコード 5,684
ページ  42/203
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部品番号
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説明
パッケージ
在庫
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CAS100H12AM1
Cree/Wolfspeed

MOSFET 2N-CH 1200V 168A MODULE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 168A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 3.1V @ 50mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
  • Power - Max: 568W
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
パッケージ: Module
在庫7,872
Standard
1200V (1.2kV)
168A
20 mOhm @ 20A, 20V
3.1V @ 50mA
-
9500pF @ 800V
568W
-
Chassis Mount
Module
Module
AUIRF7316QTR
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC
在庫3,312
Logic Level Gate
30V
-
58 mOhm @ 4.9A, 10V
3V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
APTM10TAM19FPG
Microsemi Corporation

MOSFET 6N-CH 100V 70A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
パッケージ: SP6
在庫4,144
Standard
100V
70A
21 mOhm @ 35A, 10V
4V @ 1mA
200nC @ 10V
5100pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTC80A15SCTG
Microsemi Corporation

MOSFET 2N-CH 800V 28A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Power - Max: 277W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
パッケージ: SP4
在庫5,328
Standard
800V
28A
150 mOhm @ 14A, 10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
277W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI7956DP-T1-E3
Vishay Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
パッケージ: PowerPAK? SO-8 Dual
在庫10,716
Logic Level Gate
150V
2.6A
105 mOhm @ 4.1A, 10V
4V @ 250µA
26nC @ 10V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
NVMFD5485NLWFT1G
ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
パッケージ: 8-PowerTDFN
在庫2,864
Logic Level Gate
60V
5.3A
44 mOhm @ 15A, 10V
2.5V @ 250µA
20nC @ 10V
560pF @ 25V
2.9W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot SI7923DN-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
パッケージ: PowerPAK? 1212-8 Dual
在庫197,484
Logic Level Gate
30V
4.3A
47 mOhm @ 6.4A, 10V
3V @ 250µA
21nC @ 10V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
TPC8407,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫7,168
Logic Level Gate
30V
9A, 7.4A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NTZD3158PT1G
ON Semiconductor

MOSFET 2P-CH 20V 0.43A SOT563

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 430mA
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
パッケージ: SOT-563, SOT-666
在庫3,728
Standard
20V
430mA
900 mOhm @ 430mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
175pF @ 16V
250mW
-
Surface Mount
SOT-563, SOT-666
SOT-563
hot FDG6303N
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.5A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫1,975,920
Logic Level Gate
25V
500mA
450 mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3nC @ 4.5V
50pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
PMGD175XNEX
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V 6-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Rds On (Max) @ Id, Vgs: 252 mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
  • Power - Max: 260mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫7,680
Standard
30V
870mA (Ta)
252 mOhm @ 900mA, 4.5V
1.25V @ 250µA
1.65nC @ 4.5V
81pF @ 15V
260mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
CSD85312Q3E
Texas Instruments

MOSFET 2N-CH 20V 39A 8VSON

  • FET Type: 2 N-Channel (Dual) Common Source
  • FET Feature: Logic Level Gate, 5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 10A, 8V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-VSON (3.3x3.3)
パッケージ: 8-PowerVDFN
在庫5,760
Logic Level Gate, 5V Drive
20V
39A
12.4 mOhm @ 10A, 8V
1.4V @ 250µA
15.2nC @ 4.5V
2390pF @ 10V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-VSON (3.3x3.3)
hot DMN601DMK-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.51A SOT26

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 510mA
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 304nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
パッケージ: SOT-23-6
在庫35,040
Logic Level Gate
60V
510mA
2.4 Ohm @ 200mA, 10V
2.5V @ 1mA
304nC @ 4.5V
50pF @ 25V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
hot DMC3028LSD-13
Diodes Incorporated

MOSFET N/P-CH 30V 6.6A/6.8A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A, 6.8A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
パッケージ: 8-SOIC (0.154", 3.90mm Width)
在庫534,480
Logic Level Gate
30V
6.6A, 6.8A
28 mOhm @ 6A, 10V
3V @ 250µA
10.5nC @ 10V
472pF @ 15V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMN65D8LDW-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
パッケージ: 6-TSSOP, SC-88, SOT-363
在庫177,240
Logic Level Gate
60V
180mA
6 Ohm @ 115mA, 10V
2V @ 250µA
0.87nC @ 10V
22pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot BUK9K12-60EX
Nexperia USA Inc.

MOSFET 2N-CH 60V 35A 56LFPAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A
  • Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
  • Power - Max: 68W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
パッケージ: SOT-1205, 8-LFPAK56
在庫4,160
Logic Level Gate
60V
35A
10.7 mOhm @ 15A, 10V
2.1V @ 1mA
24.5nC @ 5V
3470pF @ 25V
68W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot DMN2400UV-7
Diodes Incorporated

MOSFET 2N-CH 20V 1.33A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.33A
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
パッケージ: SOT-563, SOT-666
在庫858,912
Logic Level Gate
20V
1.33A
480 mOhm @ 200mA, 5V
900mV @ 250µA
0.5nC @ 4.5V
36pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
SH68N65DM6AG
STMicroelectronics

MOSFET 2N-CH 650V 64A 9ACEPACK

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
  • Power - Max: 379W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-ACEPACK SMIT
パッケージ: -
Request a Quote
-
650V
64A (Tc)
41mOhm @ 23A, 10V
4.75V @ 250µA
116nC @ 10V
5900pF @ 100V
379W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
9-PowerSMD
9-ACEPACK SMIT
DMC1028UVT-13
Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
パッケージ: -
Request a Quote
-
12V, 20V
6.1A (Ta), 3.5A (Ta)
25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
1V @ 250µA
18.5nC @ 8V, 11.5nC @ 8V
787pF @ 6V, 576pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMN2991UDR4-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.5A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 14.6pF @ 16V
  • Power - Max: 380mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1010-6 (Type UXC)
パッケージ: -
在庫13,455
Logic Level Gate
20V
500mA (Ta)
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.28nC @ 4.5V
14.6pF @ 16V
380mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-XFDFN Exposed Pad
X2-DFN1010-6 (Type UXC)
DI0A4N45SQ2
Diotec Semiconductor

MOSFET SO-8 N 450V 4.5OHM 150C

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
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450V
400mA (Ta)
4.5Ohm @ 400mA, 10V
4V @ 250µA
7nC @ 10V
160pF @ 25V
2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTEFD2KS26NTCG
onsemi

NCH 12V 20A WLCSP DUAL

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
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FDS8936A
Fairchild Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
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30V
6A (Ta)
28mOhm @ 6A, 10V
3V @ 250µA
27nC @ 10V
650pF @ 15V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AOC3870
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 10DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-SMD, No Lead
  • Supplier Device Package: 10-AlphaDFN (3.01x1.52)
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12V
25A (Ta)
2.8mOhm @ 5A, 4.5V
1.1V @ 250µA
32nC @ 4.5V
-
2.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
10-SMD, No Lead
10-AlphaDFN (3.01x1.52)
PJL9809_R2_00001
Panjit International Inc.

MOSFET 2P-CH 30V 5.3A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 15V
  • Power - Max: 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
パッケージ: -
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30V
5.3A (Ta)
30mOhm @ 4A, 10V
2.5V @ 250µA
7.8nC @ 4.5V
870pF @ 15V
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN32M6LCA8-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V X4-DSN6025

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 15V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, No Lead
  • Supplier Device Package: X4-DSN6025-8
パッケージ: -
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30V
30A (Ta)
2.6mOhm @ 10A, 10V
2.2V @ 1mA
42.7nC @ 4.5V
2780pF @ 15V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, No Lead
X4-DSN6025-8
NVMFD5C650NLT1G
onsemi

MOSFET 2N-CH 60V 21A/111A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 98µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
  • Power - Max: 3.5W (Ta), 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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60V
21A (Ta), 111A (Tc)
4.2mOhm @ 20A, 10V
2.2V @ 98µA
16nC @ 4.5V
2546pF @ 25V
3.5W (Ta), 125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
BSZ0907NDXTMA2
Infineon Technologies

MOSFET 2N-CH 30V 6.7A WISON-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V, 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 15V, 900pF @ 15V
  • Power - Max: 700mW (Ta), 860mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-WISON-8
パッケージ: -
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Logic Level Gate, 4.5V Drive
30V
6.7A (Ta), 8.5A (Ta)
9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
2V @ 250µA
6.4nC @ 4.5V, 7.9nC @ 4.5V
730pF @ 15V, 900pF @ 15V
700mW (Ta), 860mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PG-WISON-8