ページ 31 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  31/158
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在庫
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Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH75UED-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
在庫4,240
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG8P08N120KD-EPBF
Infineon Technologies

IGBT 1200V 15A 89W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 89W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 20ns/160ns
  • Test Condition: 600V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
パッケージ: TO-247-3
在庫7,392
1200V
15A
15A
2V @ 15V, 5A
89W
300µJ (on), 300µJ (off)
Standard
45nC
20ns/160ns
600V, 5A, 47 Ohm, 15V
50ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG6I320UPBF
Infineon Technologies

IGBT 330V 24A 39W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A
  • Power - Max: 39W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 24ns/89ns
  • Test Condition: 196V, 12A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫7,008
330V
24A
-
1.65V @ 15V, 24A
39W
-
Standard
46nC
24ns/89ns
196V, 12A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGS4055PBF
Infineon Technologies

IGBT 300V 110A 255W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 255W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 132nC
  • Td (on/off) @ 25°C: 44ns/245ns
  • Test Condition: 180V, 35A, 10 Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫12,192
300V
110A
-
2.1V @ 15V, 110A
255W
-
Standard
132nC
44ns/245ns
180V, 35A, 10 Ohm
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4PH30KD
Infineon Technologies

IGBT 1200V 20A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: 950µJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 39ns/220ns
  • Test Condition: 800V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫5,616
1200V
20A
40A
4.2V @ 15V, 10A
100W
950µJ (on), 1.15mJ (off)
Standard
53nC
39ns/220ns
800V, 10A, 23 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT15GT60KRG
Microsemi Corporation

IGBT 600V 42A 184W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 184W
  • Switching Energy: 150µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 6ns/105ns
  • Test Condition: 400V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
パッケージ: TO-220-3
在庫4,976
600V
42A
45A
2.5V @ 15V, 15A
184W
150µJ (on), 215µJ (off)
Standard
75nC
6ns/105ns
400V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
FGA40N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 470µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫7,584
600V
40A
160A
3V @ 15V, 20A
160W
470µJ (on), 130µJ (off)
Standard
77nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
95ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IRGC4063B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: Die
在庫6,080
600V
48A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
SGP07N120XKSA1
Infineon Technologies

IGBT 1200V 16.5A 125W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 16.5A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
  • Power - Max: 125W
  • Switching Energy: 1mJ
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 27ns/440ns
  • Test Condition: 800V, 8A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
パッケージ: TO-220-3
在庫6,912
1200V
16.5A
27A
3.6V @ 15V, 8A
125W
1mJ
Standard
70nC
27ns/440ns
800V, 8A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRGR2B60KDTRPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫4,192
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGT6N170AHV
IXYS

IGBT 1700V 6A 75W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 14A
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 3A
  • Power - Max: 75W
  • Switching Energy: 590µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.5nC
  • Td (on/off) @ 25°C: 46ns/220ns
  • Test Condition: 850V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫3,536
1700V
6A
14A
7V @ 15V, 3A
75W
590µJ (on), 180µJ (off)
Standard
18.5nC
46ns/220ns
850V, 6A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
NGD8201BNT4G
Littelfuse Inc.

IGBT 400V 20A 125W DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫5,344
430V
15A
50A
1.8V @ 4.5V, 10A
115W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
AOT15B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Power - Max: 214W
  • Switching Energy: 290µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 13ns/116ns
  • Test Condition: 400V, 15A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 317ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫12,372
650V
30A
45A
2.15V @ 15V, 15A
214W
290µJ (on), 200µJ (off)
Standard
32nC
13ns/116ns
400V, 15A, 20 Ohm, 15V
317ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
STGF10NB60SD
STMicroelectronics

IGBT 600V 23A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
  • Power - Max: 25W
  • Switching Energy: 600µJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 700ns/1.2µs
  • Test Condition: 480V, 10A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
パッケージ: TO-220-3 Full Pack
在庫14,124
600V
23A
80A
1.75V @ 15V, 10A
25W
600µJ (on), 5mJ (off)
Standard
33nC
700ns/1.2µs
480V, 10A, 1 kOhm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
AOTF10B65M2
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 180µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 262ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫14,676
650V
20A
30A
2V @ 15V, 10A
30W
180µJ (on), 130µJ (off)
Standard
24nC
12ns/91ns
400V, 10A, 30 Ohm, 15V
262ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
FGA6530WDF
Fairchild/ON Semiconductor

IGBT 650V 60A 176W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 176W
  • Switching Energy: 960µJ (on), 162µJ (off)
  • Input Type: Standard
  • Gate Charge: 37.4nC
  • Td (on/off) @ 25°C: 12ns/42.4ns
  • Test Condition: 400V, 30A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 81ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫9,192
650V
60A
90A
2.2V @ 15V, 30A
176W
960µJ (on), 162µJ (off)
Standard
37.4nC
12ns/42.4ns
400V, 30A, 6 Ohm, 15V
81ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot ISL9V3036S3ST
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫16,800
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
NGTB20N135IHRWG
ON Semiconductor

IGBT 1350V 40A 394W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
  • Power - Max: 394W
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 234nC
  • Td (on/off) @ 25°C: -/245ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫6,528
1350V
40A
120A
2.65V @ 15V, 20A
394W
600µJ (off)
Standard
234nC
-/245ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IHW30N135R3FKSA1
Infineon Technologies

IGBT 1350V 60A 349W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 349W
  • Switching Energy: 1.93mJ (off)
  • Input Type: Standard
  • Gate Charge: 263nC
  • Td (on/off) @ 25°C: -/337ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫10,224
1350V
60A
90A
1.85V @ 15V, 30A
349W
1.93mJ (off)
Standard
263nC
-/337ns
600V, 30A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGH30S130P
Fairchild/ON Semiconductor

IGBT 1300V 60A 500W TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1300V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 500W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫8,184
1300V
60A
90A
2.3V @ 15V, 30A
500W
-
Standard
78nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
RGTH40TK65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 23A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 23 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 56 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
パッケージ: -
在庫966
650 V
23 A
80 A
2.1V @ 15V, 20A
56 W
-
Standard
40 nC
22ns/73ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
HGTG20N60C3R
Harris Corporation

40A, 600V, RUGGED N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 164 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 116 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: -
Request a Quote
600 V
40 A
80 A
2.2V @ 15V, 20A
164 W
-
Standard
116 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IHW30N160R2FKSA1
Infineon Technologies

IGBT 1600V 60A 312W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 312 W
  • Switching Energy: 4.37mJ
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: -/525ns
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
パッケージ: -
Request a Quote
1600 V
60 A
90 A
2.1V @ 15V, 30A
312 W
4.37mJ
Standard
94 nC
-/525ns
600V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
RJP4007ANS-00-Q6
Renesas Electronics Corporation

IGBT 400V 15A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGC11T120T8LX1SA1
Infineon Technologies

IGBT 1200V 8A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
1200 V
-
24 A
2.07V @ 15V, 8A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIGB40N65H5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
パッケージ: -
在庫195
650 V
40 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
RGPZ10BM40FHTL
Rohm Semiconductor

IGBT 460V 20A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 460 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 107 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
パッケージ: -
在庫22,467
460 V
20 A
-
2.0V @ 5V, 10A
107 W
-
Standard
14 nC
500ns/4µs
300V, 8A, 100Ohm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
PCFG40T65SQF
onsemi

IGBT FIELD STOP 650V WAFER

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
パッケージ: -
Request a Quote
650 V
-
160 A
2.1V @ 15V, 40A
-
-
Standard
80 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer