ページ 34 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
連絡先
SalesDept@heisener.com 86-755-83210559-827
ログイン/登録
Language Translation

* Please refer to the English Version as our Official Version.

BOM
カート 0

トランジスタ - IGBT - シングル

レコード 4,424
ページ  34/158
画像
部品番号
メーカ
説明
パッケージ
在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGB4607DPBF
Infineon Technologies

IGBT 600V 11A 58W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫3,648
600V
11A
12A
2.05V @ 15V, 4A
58W
140µJ (on), 62µJ (off)
Standard
9nC
27ns/120ns
400V, 4A, 100 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG7PH35UD1PBF
Infineon Technologies

IGBT 1200V 50A 179W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 179W
  • Switching Energy: 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: -/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫4,896
1200V
50A
150A
2.2V @ 15V, 20A
179W
620µJ (off)
Standard
85nC
-/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC30F-STRL
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,560
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot FGA15N120ANTDTU
Fairchild/ON Semiconductor

IGBT 1200V 30A 186W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 186W
  • Switching Energy: 3mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 15ns/160ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 330ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
パッケージ: TO-3P-3, SC-65-3
在庫5,440
1200V
30A
45A
2.4V @ 15V, 15A
186W
3mJ (on), 600µJ (off)
Standard
120nC
15ns/160ns
600V, 15A, 10 Ohm, 15V
330ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IRG4BC30F-SPBF
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫332,532
600V
31A
120A
1.8V @ 15V, 17A
100W
230µJ (on), 1.18mJ (off)
Standard
51nC
21ns/200ns
480V, 17A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGIB7B60KDPBF
Infineon Technologies

IGBT 600V 12A 39W TO220FP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 39W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 95ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
パッケージ: TO-220-3 Full Pack
在庫103,464
600V
12A
24A
2.2V @ 15V, 8A
39W
160µJ (on), 160µJ (off)
Standard
29nC
23ns/140ns
400V, 8A, 50 Ohm, 15V
95ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IGP20N65F5XKSA1
Infineon Technologies

IGBT 650V 40A 170W TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125W
  • Switching Energy: 160µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 20ns/165ns
  • Test Condition: 400V, 10A, 32 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
パッケージ: TO-220-3
在庫3,760
650V
42A
60A
2.1V @ 15V, 20A
125W
160µJ (on), 60µJ (off)
Standard
48nC
20ns/165ns
400V, 10A, 32 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IXGT24N170AH1
IXYS

IGBT 1700V 24A 250W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: 2.97mJ (on), 790µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 21ns/336ns
  • Test Condition: 850V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫2,288
1700V
24A
75A
6V @ 15V, 16A
250W
2.97mJ (on), 790µJ (off)
Standard
140nC
21ns/336ns
850V, 24A, 10 Ohm, 15V
200ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGT72N60A3
IXYS

IGBT 600V 75A 540W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
  • Power - Max: 540W
  • Switching Energy: 1.38mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫3,088
600V
75A
400A
1.35V @ 15V, 60A
540W
1.38mJ (on), 3.5mJ (off)
Standard
230nC
31ns/320ns
480V, 50A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXDH35N60B
IXYS

IGBT 600V 60A 250W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
  • Power - Max: 250W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD (IXDH)
パッケージ: TO-3P-3 Full Pack
在庫2,320
600V
60A
70A
2.7V @ 15V, 35A
250W
1.6mJ (on), 800µJ (off)
Standard
120nC
-
300V, 35A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD (IXDH)
IXXH60N65B4
IXYS

IGBT 650V 116A 455W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 116A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 455W
  • Switching Energy: 3.13mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 37ns/145ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
パッケージ: TO-247-3
在庫5,664
650V
116A
250A
2V @ 15V, 60A
455W
3.13mJ (on), 1.15mJ (off)
Standard
95nC
37ns/145ns
400V, 60A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
IXGP42N30C3
IXYS

IGBT 300V 223W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
  • Power - Max: 223W
  • Switching Energy: 120µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 21ns/113ns
  • Test Condition: 200V, 21A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫6,880
300V
-
250A
1.85V @ 15V, 42A
223W
120µJ (on), 150µJ (off)
Standard
76nC
21ns/113ns
200V, 21A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB25N120SWG
ON Semiconductor

IGBT 25A 1200V TO-247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 385W
  • Switching Energy: 1.95mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 178nC
  • Td (on/off) @ 25°C: 87ns/179ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 154ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫6,992
1200V
50A
100A
2.4V @ 15V, 25A
385W
1.95mJ (on), 600µJ (off)
Standard
178nC
87ns/179ns
600V, 25A, 10 Ohm, 15V
154ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGB30H60DLFB
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 393µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: -/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫3,984
600V
60A
120A
2V @ 15V, 30A
260W
393µJ (off)
Standard
149nC
-/146ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AOTF10B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 10A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 180µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 263ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: TO-220-3
在庫19,656
650V
20A
30A
2V @ 15V, 10A
30W
180µJ (on), 130µJ (off)
Standard
24nC
12ns/91ns
400V, 10A, 30 Ohm, 15V
263ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IXYH30N170C
IXYS

1700V/108A HIGH VOLTAGE XPT IGB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 108A
  • Current - Collector Pulsed (Icm): 255A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
  • Power - Max: 937W
  • Switching Energy: 5.9mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 850V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
パッケージ: TO-247-3
在庫6,832
1700V
108A
255A
3.7V @ 15V, 30A
937W
5.9mJ (on), 3.3mJ (off)
Standard
140nC
28ns/150ns
850V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKB06N60TATMA1
Infineon Technologies

IGBT 600V 12A 88W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 123ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO-263
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫7,872
600V
12A
18A
2.05V @ 15V, 6A
88W
200µJ
Standard
42nC
9ns/130ns
400V, 6A, 23 Ohm, 15V
123ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO-263
hot NGTB10N60R2DT4G
ON Semiconductor

IGBT 10A 600V DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 72W
  • Switching Energy: 412µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 48ns/120ns
  • Test Condition: 300V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫7,824
600V
20A
40A
2.1V @ 15V, 10A
72W
412µJ (on), 140µJ (off)
Standard
53nC
48ns/120ns
300V, 10A, 30 Ohm, 15V
90ns
175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot STGW39NC60VD
STMicroelectronics

IGBT 600V 80A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 333µJ (on), 537µJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 33ns/178ns
  • Test Condition: 390V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: TO-247-3
在庫84,132
600V
80A
220A
2.4V @ 15V, 30A
250W
333µJ (on), 537µJ (off)
Standard
126nC
33ns/178ns
390V, 30A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
AFGHL25T120RL
onsemi

1200V/25A FSII IGBT LOW VCESAT (

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
  • Power - Max: 400 W
  • Switching Energy: 1.94mJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 277 nC
  • Td (on/off) @ 25°C: 27.2ns/116ns
  • Test Condition: 600V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 159 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
パッケージ: -
Request a Quote
1250 V
48 A
100 A
2V @ 15V, 25A
400 W
1.94mJ (on), 730µJ (off)
Standard
277 nC
27.2ns/116ns
600V, 25A, 5Ohm, 15V
159 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC14T60SNCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGT60TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 55A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 29ns/100ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
パッケージ: -
在庫1,764
650 V
55 A
90 A
2.1V @ 15V, 30A
194 W
-
Standard
58 nC
29ns/100ns
400V, 30A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
STGWA40H65DHFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 72 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 230 W
  • Switching Energy: 214µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 153 nC
  • Td (on/off) @ 25°C: 23ns/77ns
  • Test Condition: 400V, 20A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 111 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
パッケージ: -
Request a Quote
650 V
72 A
120 A
2V @ 15V, 40A
230 W
214µJ (on), 220µJ (off)
Standard
153 nC
23ns/77ns
400V, 20A, 4.7Ohm, 15V
111 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
MIW30N65FA-BP
Micro Commercial Co

IGBT 650V 30A,TO-247AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 187 W
  • Switching Energy: 870µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 37ns/113ns
  • Test Condition: 300V, 30A, 33Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AB
パッケージ: -
在庫5,388
650 V
60 A
120 A
2.4V @ 15V, 30A
187 W
870µJ (on), 260µJ (off)
Standard
150 nC
37ns/113ns
300V, 30A, 33Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AB
AOD5B65MQ1E
Alpha & Omega Semiconductor Inc.

IGBT 5A 650V TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 15 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
  • Power - Max: 52 W
  • Switching Energy: 90µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 8.8 nC
  • Td (on/off) @ 25°C: 7ns/78ns
  • Test Condition: 400V, 5A, 60Ohm, 15V
  • Reverse Recovery Time (trr): 74 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
パッケージ: -
Request a Quote
650 V
10 A
15 A
2.7V @ 15V, 5A
52 W
90µJ (on), 60µJ (off)
Standard
8.8 nC
7ns/78ns
400V, 5A, 60Ohm, 15V
74 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
PCFGY4L140T120SWD
onsemi

IGBT FIELD STOP 1200V 140A TP247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYR100N65A3V1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJH30E2DPP-Z0-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-