ページ 33 - トランジスタ - IGBT - シングル | ディスクリート半導体製品 | Heisener Electronics
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トランジスタ - IGBT - シングル

レコード 4,424
ページ  33/158
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在庫
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4BC20SD-SPBF
Infineon Technologies

IGBT 600V 19A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 38A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: 320µJ (on), 2.58mJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 62ns/690ns
  • Test Condition: 480V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
パッケージ: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
在庫4,640
600V
19A
38A
1.6V @ 15V, 10A
60W
320µJ (on), 2.58mJ (off)
Standard
27nC
62ns/690ns
480V, 10A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RJH60M2DPE-00#J3
Renesas Electronics America

IGBT 600V 25A 63W LDPAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 63W
  • Switching Energy: 180µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 32ns/70ns
  • Test Condition: 300V, 12A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
パッケージ: SC-83
在庫6,784
600V
25A
-
2.5V @ 15V, 12A
63W
180µJ (on), 180µJ (off)
Standard
33nC
32ns/70ns
300V, 12A, 5 Ohm, 15V
85ns
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
IXGX120N60C2
IXYS

IGBT 600V 75A 830W PLUS TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 500A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/120ns
  • Test Condition: 400V, 80A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫7,040
600V
75A
500A
2.5V @ 15V, 100A
830W
1.7mJ (on), 1mJ (off)
Standard
370nC
40ns/120ns
400V, 80A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGX50N60BD1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 480V, 50A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫6,944
600V
75A
200A
2.3V @ 15V, 50A
300W
1.5mJ (off)
Standard
110nC
50ns/200ns
480V, 50A, 2.7 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGT60N60
IXYS

IGBT 600V 75A 300W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
  • Power - Max: 300W
  • Switching Energy: 8mJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 50ns/300ns
  • Test Condition: 480V, 60A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
パッケージ: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
在庫3,552
600V
75A
200A
1.7V @ 15V, 60A
300W
8mJ (off)
Standard
130nC
50ns/300ns
480V, 60A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot IRGB10B60KDPBF
Infineon Technologies

IGBT 600V 22A 156W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
パッケージ: TO-220-3
在庫103,464
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IGW08T120FKSA1
Infineon Technologies

IGBT 1200V 16A 70W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 70W
  • Switching Energy: 1.37mJ
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 40ns/450ns
  • Test Condition: 600V, 8A, 81 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫7,808
1200V
16A
24A
2.2V @ 15V, 8A
70W
1.37mJ
Standard
53nC
40ns/450ns
600V, 8A, 81 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IXGX100N170
IXYS

IGBT 1700V 170A 830W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 425nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
パッケージ: TO-247-3
在庫3,424
1700V
170A
600A
3V @ 15V, 100A
830W
-
Standard
425nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGR80N60B
IXYS

IGBT 600V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
パッケージ: ISOPLUS247?
在庫7,872
600V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
APT30GP60LDLG
Microsemi Corporation

IGBT 600V 100A 463W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
パッケージ: TO-264-3, TO-264AA
在庫6,256
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
NGTB40N65IHRWG
ON Semiconductor

IGBT FIELD STOP 650V 80A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 405W
  • Switching Energy: 420µJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫4,432
650V
80A
160A
1.7V @ 15V, 40A
405W
420µJ (off)
Standard
190nC
-
400V, 40A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGH20N60SFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 370µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫3,504
600V
40A
60A
2.8V @ 15V, 20A
165W
370µJ (on), 160µJ (off)
Standard
65nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IGW30N100TFKSA1
Infineon Technologies

IGBT 1000V 60A 412W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 412W
  • Switching Energy: 3.8mJ
  • Input Type: Standard
  • Gate Charge: 217nC
  • Td (on/off) @ 25°C: 33ns/535ns
  • Test Condition: 600V, 30A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫5,536
1000V
60A
90A
1.9V @ 15V, 30A
412W
3.8mJ
Standard
217nC
33ns/535ns
600V, 30A, 16 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4PH20KPBF
Infineon Technologies

IGBT 1200V 11A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 450µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 23ns/93ns
  • Test Condition: 960V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
パッケージ: TO-247-3
在庫8,520
1200V
11A
22A
4.3V @ 15V, 5A
60W
450µJ (on), 440µJ (off)
Standard
28nC
23ns/93ns
960V, 5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot FGH75N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 150A 452W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
  • Power - Max: 452W
  • Switching Energy: 3.05mJ (on), 1.35mJ (off)
  • Input Type: Standard
  • Gate Charge: 250nC
  • Td (on/off) @ 25°C: 27ns/128ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
パッケージ: TO-247-3
在庫66,480
600V
150A
225A
2.4V @ 15V, 75A
452W
3.05mJ (on), 1.35mJ (off)
Standard
250nC
27ns/128ns
400V, 75A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IRGR3B60KD2TRLP
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
パッケージ: TO-252-3, DPak (2 Leads + Tab), SC-63
在庫42,150
600V
7.8A
15.6A
2.4V @ 15V, 3A
52W
62µJ (on), 39µJ (off)
Standard
13nC
18ns/110ns
400V, 3A, 100 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IHW20N120R3FKSA1
Infineon Technologies

IGBT 1200V 40A 310W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 310W
  • Switching Energy: 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 211nC
  • Td (on/off) @ 25°C: -/387ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
パッケージ: TO-247-3
在庫6,640
1200V
40A
60A
1.7V @ 15V, 20A
310W
950µJ (off)
Standard
211nC
-/387ns
600V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGA60N65SMD
Fairchild/ON Semiconductor

IGBT 650V 120A 600W TO3P

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.54mJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 189nC
  • Td (on/off) @ 25°C: 18ns/104ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 47ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
パッケージ: TO-3P-3, SC-65-3
在庫7,656
650V
120A
180A
2.5V @ 15V, 60A
600W
1.54mJ (on), 450µJ (off)
Standard
189nC
18ns/104ns
400V, 60A, 3 Ohm, 15V
47ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
RJP30E3DPK-M2-T0
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AOT15B65MQ1
Alpha & Omega Semiconductor Inc.

IGBT 15A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Power - Max: 214 W
  • Switching Energy: 290µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: 15ns/94ns
  • Test Condition: 400V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 106 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
パッケージ: -
Request a Quote
650 V
30 A
45 A
2.15V @ 15V, 15A
214 W
290µJ (on), 200µJ (off)
Standard
32 nC
15ns/94ns
400V, 15A, 20Ohm, 15V
106 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXYA20N120B4HV
IXYS

IGBT 1200V 20A GENX4 XPT TO263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 130 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 375 W
  • Switching Energy: 3.9mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 44 nC
  • Td (on/off) @ 25°C: 15ns/200ns
  • Test Condition: 960mV, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 47 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
パッケージ: -
在庫693
1200 V
76 A
130 A
2.1V @ 15V, 20A
375 W
3.9mJ (on), 1.6mJ (off)
Standard
44 nC
15ns/200ns
960mV, 20A, 10Ohm, 15V
47 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
SGH15N120RUFTU
Fairchild Semiconductor

IGBT, 24A, 1200V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
  • Power - Max: 180 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 108 nC
  • Td (on/off) @ 25°C: 20ns/60ns
  • Test Condition: 600V, 15A, 20Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
パッケージ: -
Request a Quote
1200 V
24 A
45 A
3V @ 15V, 15A
180 W
-
Standard
108 nC
20ns/60ns
600V, 15A, 20Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IKZA40N65RH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 17ns/165ns
  • Test Condition: 400V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
パッケージ: -
在庫51
650 V
74 A
60 A
2.1V @ 15V, 40A
250 W
140µJ (on), 120µJ (off)
Standard
95 nC
17ns/165ns
400V, 20A, 15Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
SIGC76T65R3EX1SA1
Infineon Technologies

IGBT TRENCH FS 650V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 15V, 45A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
パッケージ: -
Request a Quote
650 V
150 A
450 A
1.2V @ 15V, 45A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYA20N65C3
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 230 W
  • Switching Energy: 430µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
パッケージ: -
Request a Quote
650 V
20 A
105 A
2.5V @ 15V, 20A
230 W
430µJ (on), 650µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
PCFG25T120SMW
onsemi

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGTH40TS65GC13
Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
パッケージ: -
在庫300
650 V
40 A
80 A
2.1V @ 15V, 20A
144 W
-
Standard
40 nC
22ns/73ns
400V, 20A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
AUXTMGPS4070D2
Infineon Technologies

IGBT TRENCH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
パッケージ: -
Request a Quote
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